SR746 Search Results

SR746

Abstract: VDMOS
Contextual Info: polyfet rf devices SR746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices SR746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

SR746

Abstract: TB183D 20AWG 47UF Polyfet RF Devices SR341
Contextual Info: Polyfet RF Devices TB183D SR746 Gain/Efficiency vs Freq; Vds=50Vdc Idq=1A 80 70 70 60 60 50 Gain Pout fixed at 300W 40 Efficiency Eff in % Gain in dB 50 40 30 30 20 20 10 10 2 4 6 8 10 12 14 16 Freq in MHz Page 1 18 20 22 24 26 28 30 Polyfet RF Devices 1.5MHz Chart 1

TB196

Abstract: UT85-50 NJM78L08A UT85 50 UT70 UT70-10 Tusonix SR746 0.01uf UT85
Contextual Info: TB-196 SR746 Pout/Gain vs Pin Freq=400MHz; Vds=50Vdc; Idq=800ma 150 13 1dB compression = 140W Pout 120 90 Gain 12 60 30 Efficiency @ 250W= 60% 11 2 4 6 8 10 Pin in Watts TB-196 SR746 Gain/Eff vs Freq Vds=50Vdc, Idq=800 15 100 12 80 Gain 9 60 Pout fixed @ 120W

183D

Abstract: TB183D
Contextual Info: TB183D #2 Frequency=1.5-30MHz Pout=300W Gain=17dB Vds=50Vdc Idq=1.2A Efficiency= 50% SR746 Polyfet RF Devices TB183D SR746 Gain/Efficiency vs Freq; Vds=50Vdc Idq=1A 80 70 70 60 60 50 Gain Pout fixed at 300W 40 Efficiency Eff in % Gain in dB 50 40 30 30 20

SR746

Contextual Info: polyfet rf devices SR746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices SR744 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

SR746

Abstract: 10k pot 108MHz resistor of 47ohm 01UF 01UFD 18PF 20AWG 470PF 47UF
Contextual Info: RF In 1 C1 470PF C2 15PF 4 C3 15PF R6 15 10 2 C8 0.01UFD L1 56NH R1 10K 5 10K Pot 3 6 12 SA741 18AWG 7 C4 20PF 2.2 inches 8 C5 13PF Terroid 14 turns 20AWG 850mu 20AWG 9 390 ohm 1/2 W Zener D1 6.8V R3 2.2K RF Out R5 10K C6 .01UF RF in 47uf 100V Vds=50Vdc C1

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30