SQ741 Search Results

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified

AECQ101

Contextual Info: SQ7415EN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.090 ID (A) - 16 Configuration Single PowerPAK 1212-8 S S 3.30 mm

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

AECQ101

Abstract: SQ7414EN SQ7414EN-T1
Contextual Info: SQ7414EN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® 1212-8 Package with Low 1.07 mm Profile

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

Contextual Info: SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified

Contextual Info: SPICE Device Model SQ7414AEN www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SQ7414EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) • New Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile

AN609

Contextual Info: SQ7415EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SQ7415EN-T1-E3

Contextual Info: SQ7415EN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) - 60 RDS(on) (Ω) at VGS = - 10 V 0.065 RDS(on) (Ω) at VGS = - 4.5 V 0.110 • PowerPAK® Package - Low Thermal Resistance, RthJC

Contextual Info: SQ7414AEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.026 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • Low Thermal Resistance PowerPAK® 1212-8

SQ7414

Abstract: si7401
Contextual Info: SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified

SQ7414EN-T1-E3

Contextual Info: SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified

74869

Abstract: SQ7414EN SQ741
Contextual Info: SPICE Device Model SQ7414EN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SQ7414AENW www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.028 ID (A) • Low thermal resistance PowerPAK® 1212-8

Contextual Info: SQ7414AENW_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

SQ7414EN

Abstract: SQ7414EN-T1-E3
Contextual Info: SQ7414EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) • New Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile

Contextual Info: SQ7414AEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.026 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • Low Thermal Resistance PowerPAK® 1212-8

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

SQ7414EN-T1-E3

Contextual Info: SQ7414EN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) • New Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile

Contextual Info: SQ7415AEN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.090 ID (A) - 16 Configuration

SQ741

Abstract: VDMOS
Contextual Info: polyfet rf devices SQ741 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.