SPECIFICATION DIODE T4 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS74SB23 Schottky barrier diode 1999 Apr 26 Product specification Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB23 PINNING • Ultra fast sw itching speed

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

1PS184

Abstract: smd marking code KN SC59 high speed double diode
Contextual Info: N AME R PHILIPS/DISCRETE bTE bbS3T31 D QGS7QSS Philips Semiconductors T4b * A P X Preliminary specification High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. PARAMETER CONDITIONS

Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.

MDM1200H45E2-H

Abstract: mbn1200h45e2-h MBN1200H45
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P1 Preliminary Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.

Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.

181 PH diode

Abstract: 1PS75SB45 645 LEM
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Nov 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky b a rrie r double diode encapsulated in a S O T 4 1 6 SC 75 ultra

DIODE SMD t04

Abstract: BAV105 smd T04 PHILIPS SMALL SIGNAL DIODE
Contextual Info: Philips Semiconductors Product specification High-speed diode BAV105 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD8OC SMD

P4 diode

Abstract: MBN500H65E2 p5 diode
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R1 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .

Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R3 MDM750H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .

Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R4 MDM500H65E2 Preliminary Specification FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .

3AG1A

Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R2 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .

BA221

Abstract: IR 10D DIODE
Contextual Info: Philips Semiconductors Product specification High-speed diode BA221 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BA221 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

1N843

Abstract: 1N682 1N683 1N863 CI 4011 SJ 2036 1N643 1N662 1N663 IN862
Contextual Info: 26 August 1971 SUPERSEblNG M IL-S-18500/258B MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663 This specification la m andatory for use by a ll D epart­ m ents and Agencies of the D epartm ent d befense?"

SIR34ST3

Contextual Info: MDE D ROHM CO LTD • 7020^*1 GOGbflb? 4 ■ RHM Page lu n ir n Specification Products Type [ ol ^ SIR-34ST3 SIR-34ST3 GaAs INFRARED EMITTING DIODE The SIR-34ST3 is a gallium arsenide infrared diode with transparent plastic encapsulation. The device is designed to accomodate needs of optical remote control

Contextual Info: S p e c u la t io n JAN 1 6 1386 & ekPk Page 1 Proaucts °* 2 f Type Tentative INFRA-RED LIGHT EMITTING DIODE 1. SCOPE This specification covers the detail require­ ments for GaAs Infra-red Light Emitting Diode. im am SIR-56ST3 RHI1 ftEB K im ^ 2. PHYSICAL DIMENSIONS

y 0104

Abstract: LNJC36X8ARA1 Ice blue small chromaticity difference IF5 560 2.5 DIODE 0206
Contextual Info: T E N T A T IV E Prepared HS3=ttii/Tentative Specification Checked Approved p ' t jP > ^ T.Onizuka .j CT.Maeda T.lkeda p n flii/T y p e Number:LNJC36X8ARA1 pq S/Matsushita Unified Parts Number : LNJC36X8ARA1 T47s~3 \/— K / Ice Blue Light Emitting Diode ESS

05641

Abstract: optical head laser cd disk laser diode 780 nm cd NDL3009 J22686
Contextual Info: ~~ ~5T _ 6 4 2 752 5 N E C ELECTRONICS 59C INC 05641 D T -41-05 D eT | t,427SE5 D D 0 S b 4 1 b TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE N DL3009 DAD, VD APPLICATION AIGaAs DOUBLE HETERO STRU CTU RE LA SER DIODE SEP. 7,1984 DESCRIPTIO N NDL300g laser diode is developed for D A D Digital Audio D isk , Video Disk optical head and non impact laser printer.

BY328

Abstract: BY-328 by32B
Contextual Info: Philips Semiconductors Product specification Damper diode BY328 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of

t4 sot23 diode

Abstract: marking code T4 SOT-23 T4 marking code sot 23 MMBD6100 marking T4 sot23 MMBD6100 diode
Contextual Info: BL Galaxy Electrical Production specification Surface mount switching diode MMBD6100 FEATURES Pb z High conductance. z Fast switching. z Surface mount package ideally suited for Lead-free automatic insertion. APPLICATIONS z For general purpose and switching application.

Bz027

Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
Contextual Info: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended

bv228

Abstract: BY22B BY228
Contextual Info: Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of

Marking A2t smd

Abstract: sot143 marking code JTp A2t diode smd Z3B DIODE smd diode code a2t high speed double diode sot143
Contextual Info: Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two high- . High switching speed: max. 6 ns . Continuous reverse voltage: max • Repetitive peak reverse voltage:

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance