SPB66 Search Results

Contextual Info: SPB66 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)40ð V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0

FMB-26

Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

FMB-36M

Abstract: FMB26L SF-PW
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

FMB-26

Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

66s 66

Abstract: FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V IF (AV) (A) 40 60 90 100 Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) 30 40 188 Mass (g) 1.0 Surface-Mount (SFP)

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

fmb24l

Abstract: FMB24 fmb34m fmb2204 FMW24L FMW24
Contextual Info: 4-4 Schottky Barrier Diodes 4-4-2 2 Chip Part No. VRM IO VF IR V (A) (V) (mA) SPJ-63S 6.0 Package Fig. No. Surface mount (D pack) 1 0.45 3.0 10 0.45 5.0 20 0.45 10 30 0.45 15 0.55 5.0 TO-220F 0.55 3.5 Surface mount (D pack) 0.55 5.0 TO-220F 0.55 5.0 0.55

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

FMB-26

Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
Contextual Info: Schottky Barrier Diodes Tj °C 50Hz VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot • External Dimensions 0.62 0.7 1 100 20 0.072 81 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 94 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

smp86

Abstract: SMP81 SBR805 SBR81 SBR82 SBR84 SP8605 SPB61 l300l SPB62
Contextual Info: SINO-AflERICAN SILICON 24E • fl2fll74ti □□□OQSS 4 ■ B R I D G E R E C T IF IE R S T~-Z3>-o7 OPERATING TEMPERATURE RANGE: -5 5 ° C to +125°C STORAGE TEMPERATURE RANGE: -5 5 ° C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current

FMBG19

Abstract: FMB-G16L EK 110 FMB-26 FMB-26L FMB-36 FME-2106 SFPB-56 SFPB-66 SFPB-76
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

SFPW-56

Abstract: SPB-66S SPB-G56S FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

SFPJ-73

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

RN4Z

Contextual Info: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20

FMB-G16L

Abstract: FMB-2206 FMB-2306 FMB-26 FMB-26L FMB-36 SFPB-56 SFPB-66 SFPB-76 SPB-66S
Contextual Info: Schottky Barrier Diodes Part Number Rth j- Rth (j-c) (°C/W) Mass (g) 100 20 0.072 10 –40 to +150 0.62 0.7 1 SFPB-66 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 SFPB-76 2.0 40 –40 to +150 0.62 2.0 2 20 100 20 0.072 SPB-G56S 5.0 60 –40 to +150

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

w 2206 schottky

Abstract: fmb26l EK 110 FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66
Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)