FMB2204 Search Results

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-2204 １ 適用範囲 Scope この規格はFMB-2204 について適用する。 The present specifications shall apply to Sanken silicon diode, FMB-2204. ２ 概要 Outline 種 Type 別 ショットキーバリアダイオード

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Tj (°C) Rth(j-l) Rth(j-c) (°C/W) Mass

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150

Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V IF (AV) (A) 40 60 90 100 Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) 30 40 188 Mass (g) 1.0 Surface-Mount (SFP)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

AK 1202

Abstract: MPE-220A
Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V IF (AV) (A) 40 60 90 100 Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) 30 40 188 Mass (g) 1.0 Surface-Mount (SFP)

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

fmb24l

Abstract: FMB24 fmb34m fmb2204 FMW24L FMW24
Contextual Info: 4-4 Schottky Barrier Diodes 4-4-2 2 Chip Part No. VRM IO VF IR V (A) (V) (mA) SPJ-63S 6.0 Package Fig. No. Surface mount (D pack) 1 0.45 3.0 10 0.45 5.0 20 0.45 10 30 0.45 15 0.55 5.0 TO-220F 0.55 3.5 Surface mount (D pack) 0.55 5.0 TO-220F 0.55 5.0 0.55

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

EK 110

Abstract: FMB-2304 FMB-34M SFPB-54 SFPB-64 SFPB-74 SFPE-64 SPB-64S SPB-G34S SPB-G54S
Contextual Info: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V IF (AV) (A) 40 60 90 100 Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) 30 40 188 Mass (g) 1.0 Surface-Mount (SFP)

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

rjp 6065

Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
Contextual Info: Bulletin No O03JF0 （Jan.,2010） 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報

FMN-1106S

Abstract: rvb 602 diode ry2a FMN 2206 RBV-3006 ry2a zener diode reference guide RU20x RK1X fmx4202s
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 194 Taping Specifications . 196

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

FMB-34M

Abstract: FMB-G14 FMB-G14L FMB-G24H MPE-24H SFPB-54 SFPB-64 SFPB-74 SFPE-64 SPB-64S
Contextual Info: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China