FMB24L Search Results

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

Contextual Info: Schottky Barrier Diodes 40V Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. IFSM （A） FMB-24 4.0 FMB-24M 6.0 FMB-24L 10.0 40 50Hz Half-cycle Sinewave Single Shot 12.0 75 FMB-34 15.0

CTB24L

Abstract: ctb34m
Contextual Info: 5-5. Schottky Barrier Diodes Surface Mount Type Type No. SFPA-51 VRM IF AV IFSM (V) (A) (A) 10 Tj Tstg (°C) 60 Electrical Characteristics VF (V) IR H•IR Condition (mA) (mA) Fig. = IF Ta = 100°C No. max per max per max per element element element 0.34

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Tj (°C) Rth(j-l) Rth(j-c) (°C/W) Mass

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Contextual Info: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150

Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V IF (AV) (A) 40 60 90 100 Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) 30 40 188 Mass (g) 1.0 Surface-Mount (SFP)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

AK 1202

Abstract: MPE-220A
Contextual Info: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V IF (AV) (A) 40 60 90 100 Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) 30 40 188 Mass (g) 1.0 Surface-Mount (SFP)

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

RBA-406B

Abstract: CI 3060 elsys CTUG3D AM01 AU02 EM01 EU02A FMU12S FMU-12S rb40 RECTIFIER
Contextual Info: SANKEN ELECTRIC CO LTD 3SE 5 Schottky Barrier Diodes m 7 ^ 0 7 4 1 0000fl21 «= ^ S A K J ^ ; £ | : g | E3Vrm: 3 0 — 9 0 V E lo : 0 .7 ~ 3 0 A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 A K 03 A K 04 A K 06 A K 09

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

Contextual Info: Schottky Barrier Diodes 40V Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. FMB-24 4.0 FMB-24M 6.0 Tj (°C) IFSM (A) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot max per element IF (A) 40 (ns) max per element max per element

fmb24l

Abstract: FMB24 fmb34m fmb2204 FMW24L FMW24
Contextual Info: 4-4 Schottky Barrier Diodes 4-4-2 2 Chip Part No. VRM IO VF IR V (A) (V) (mA) SPJ-63S 6.0 Package Fig. No. Surface mount (D pack) 1 0.45 3.0 10 0.45 5.0 20 0.45 10 30 0.45 15 0.55 5.0 TO-220F 0.55 3.5 Surface mount (D pack) 0.55 5.0 TO-220F 0.55 5.0 0.55

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

FMB24L

Abstract: FMB-G14 FMB-G14L FMB-G24H MPE-24H SFPB-54 SFPB-64 SFPB-74 SFPE-64 SPB-64S
Contextual Info: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150

F10P04Q

Abstract: F10P40F f6p20f F8P04Q FMB-23L 1591c F10P06Q F10P03Q F10P20F F10P20FR
Contextual Info: - 5Ê ft m F6 P 2 0 F F6 P 3 0 F F6 P 4 0 F F8P 0 3 Q F8P 0 4 Q & tt € H a * iv h B*4 v9B*4 '/ 9 B*4 '/ 9 - Prs m Vr s m kW (V) H V (V) Vr Vi Io (V) (V) (A) *8 m (°C) (A) iS] f t æ M (°C) (V) -h ISJ ft a • Ç- I Rinax Vpmax If s m I F (A) T C C )