SPB30N Search Results

SPB30N Datasheets (7)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPB30N03		Siemens		Original	PDF	1.09MB	7
SPB30N03		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPB30N03		Infineon Technologies	V(ds): 30V 0.023 ? 30A SIPMOS power transistor	Scan	PDF	572.37KB	14
SPB30N03L		Infineon Technologies	SIPMOS Power Transistor	Original	PDF	74.57KB	9
SPB30N03L		Siemens		Original	PDF	88.57KB	9
SPB30N03L		Siemens		Original	PDF	1.09MB	7
SPB30N03L		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

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Greenlee Textron Inc


Greenlee Textron Inc KS-PB30 (NULL) PUSHBUTTON SET 30.5MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	KS-PB30 (NULL)	Bulk	4	3 Weeks	1	1 $663.67 10 $663.67 100 $663.67 1000 $663.67 10000 $663.67	Buy Now

SPB30N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Siemens DIODE E 1220 Abstract: SPB30N03L SPP30N03L Contextual Info: SPP30N03L SPB30N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP30N03L 30 V 30 A SPB30N03L RDS on @ VGS 0.028 Ω VGS = 4.5 V	Original	spp30n03l spb30n03l p-to220-3-1 q67040-s4143-a2 +3p-to263-3-2 q67040-s4737-a3 siemens diode e 1220	PDF
Siemens DIODE E 1220 Contextual Info: SIEMENS SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP30N03L Vds 30 V b 30 A SPB30N03L ffDS on @ VGS 0.028 O V/gs = 4.5V	OCR Scan	spp30n03l spb30n03l p-t0220-3-1 p-t0263-3-2 +3q67040-s4143-a2 q67040-s4737-a3 siemens diode e 1220	PDF
SMD Transistor t30 Abstract: transistor SMD t30 Contextual Info: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level	OCR Scan	30n03l spp30n03l p-t0220-3-1 q67040-s4737-a2 +8p-t0263-3-2 q67040-s4143-a3 spb30n03l s35bq5 q133777 sqt-89 smd transistor t30 transistor smd t30	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615nv bsp318s buz mosfet mosfet buz 326 +8buz mosfet 334 spd14n05 mosfet buz 349 mosfet buz 90a buz 100 mosfet bup202 buz mosfet 102s buz mosfet 111s	PDF
30N03 Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3 Contextual Info: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated	OCR Scan	spp30n03 p-t0220-3-1 q67040-s4736-a2 spb30n03 +14p-t0263-3-2 q67040-s4736-a3 vpt05i64 fis35bg5 d133777 sqt-89 30n03 marking code ff p smd transistor smd transistor tn 6 pin transistor smd code xi g1337 transistor smd marking code xi smd transistor 2x sot 23 smd code book b3	PDF
30N03L Abstract: 30N03 SPB30N03L SPP30N03L Contextual Info: SPP 30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated	Original	30n03l spp30n03l p-to220-3-1 q67040-s4737-a2 +4spb30n03l p-to263-3-2 q67040-s4143-a3 30n03	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2n7000 2n7002 2sj377 2sj378 +162sj380 2sj401 2sj402 2sj407 2sj412 2sj419 yta630 mtw14p20 bss125 mtaj30n06hd 2sk2837 equivalent smu10p05 smp60n06 replacement ste180n10 rfh75n05e irfd620	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	615nv ot-223 20iemens b152-h6493-g5-x-7600 +10buz mosfet mosfet buz 326 bup 312 bss 130 bup 304 bup 313 615n60 buz 840 sgu06n60 bup 307d	PDF
30N03 Abstract: P 30N03 spp30n03a Q67040-S4736-A2 spb30n Contextual Info: SPP 30N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.023 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • dv/dt rated • 175˚C operating temperature	Original	30n03 spp30n03 p-to220-3-1 q67040-s4736-a2 +6spb30n03 p-to263-3-2 q67040-s4736-a3 p 30n03 spp30n03a spb30n	PDF
Siemens DIODE E 1220 Contextual Info: SPP30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.018 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated	Original	spp30n03l p-to220-3-1 q67040-s4737-a2 spb30n03l +3p-to263-3-2 q67040-s4143-a3 siemens diode e 1220	PDF