SP SOT23 Search Results

061OT

Abstract: marking BSs sot23 siemens
Contextual Info: SIEMENS SP 061OT SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = '1-0.-2.0V Type b -0.13 A SP 061 OT Vbs -60 V Type SP 0610T Ordering Code Q67000-S088 ^bS(on) Package Marking 10« SOT-23 sSF Tape and Reel Information

Contextual Info: SIEMENS SP 061OT SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = 0.-2.0V Type ^DS #D f lDS(on) Package Marking SP 061 OT -60 V -0.13 A io n SOT-23 sSF Type SP 061 OT Ordering Code Q67000-S088 Tape and Reel Information

resistor 100k ohm

Abstract: resistor* 100k ohm resistor 10k ohm EMK212BJ474MG CAP 0.1uF 16V 2N7002 C0603C104K4RAC EEFUE0E271XR EEFUE0J181XR IRF7822
Contextual Info: DESIGNATION C4-C9 C1-C3 C10,C11,C15 C13,C14,C16 C12 CA D1 N1,N2 R8 R2 R7 R3 L1 U1 R6 Q1 3.3V Input 1.25V @ 12A Output 04/18/02 QTY DESCRIPTION 6 Cap 270 uF 2.5V SP Panasonic EEFUE0E271XR 3 Cap 180uF 6.3V SP Panasonic (EEFUE0J181XR) 3 Cap 10uF 6.3V Ceramic X5R 1812,

resistor 100k ohm

Abstract: resistor* 100k ohm INVENTEC resistor 10k ohm JMK212BJ106MG IRF 511 Resistor 511 Ohm 47uF 6.3v 0603 C0603C104K4RAC EEFUE0E271XR
Contextual Info: DESIGNATION C4-C9 C1-C3 C10,C11,C15 C13,C14,C16 C12 CA D1 N1,N2 R8 R2 R7 R3 L1 U1 R6 Q1 INVENTEC 3.3V Input 1.25V @ 12A Output 04/18/02 QTY DESCRIPTION 6 Cap 270 uF 2.5V SP Panasonic EEFUE0E271XR 3 Cap 180uF 6.3V SP Panasonic (EEFUE0J181XR) 3 Cap 10uF 6.3V Ceramic X5R 1812,

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 -SEPTEMBER 1995 O PARTMARKING DETAIL— SP ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT -50 V mA mA Continuous Drain Current •d -130 Pulsed Drain Current

BSS84

Abstract: BSS84 SOT23
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAIL — SP S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current ID -130 mA Pulsed Drain Current

BFS17

Abstract: BFS17W
Contextual Info: • bb53^31 0a252bb 122 ■ APX P h ilip s S e m icon d u inary sp ecification NPN 1 GHz wideband transistor BFS17W N AUER PHILIPS/ DIS CRETE DESCRIPTION b7E PINNING Silicon NPN transistor in a plastic

transistor 2030

Abstract: 2030 transistor potentiometer 1k ohm SP-2030
Contextual Info: Preliminary Product Description SP-2030 Stanford Microdevices offers a high-performance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a

CAP ALUM F 105

Abstract: 2030P
Contextual Info: Preliminary Product Description SP-2030P Stanford offers a high-performance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. Ideal for CDMA, W-CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or

METCAL SP200

Abstract: MX-500P-21 QX2-P-21 SP440 QX2-P-11 SP-PW1-20 ERG IC 1118 NZ-D1113 D1116 MX-500S-11
Contextual Info: Precision Systems for the Electronics Bench SOLDERING, DESOLDERING AND REWORK SYSTEMS SP 44 0 SP440 Desoldering System Since 1982, OK International’s Metcal brand has been the industr y ’s single source of high-per formance, precision systems for the electronics bench.

tlo82

Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Contextual Info: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil

philips cnx82a

Abstract: CNX83A CNX82A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC
Contextual Info: Produ ct sp ecification Philip» Semiconductors High-voltage optocouplers CNX82A/CNX83A FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL Integrated circuits • High degree of A C and DC insulation 3750 V (RMS and

Contextual Info: Product Description SP-2030P Stanford offers a high-perform ance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. Ideal for CDMA, W -CDM A, TDMA, GSM, FM, Single or M ulti-Carrier Power Am plifiers in Class A or

Contextual Info: AUTOMOTIVE AND HOUSEHOLD SECURITY SIREN DRIVER ZSD100 ISSUE 5 -A U G U ST 1995 INTRODUCTION FEATURES The ZSD100 is a frequency swept alarm signal generato r designed sp e c ific a lly for static and automotive security alarm systems. One ZSD100, two timing capacitors, an

X3A-BFT93

Abstract: BFQ23 philips bfq23 BFQ24 BFT93
Contextual Info: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole

IEC-134

Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134
Contextual Info: P h ilip s Sem icon d u ctora P rodu ct sp ecification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL ^ 3 SbE D DESCRIPTION BCDC>,n A3A-BFR540 m TllDfiEb OOMblD? ITI • PHIN M E C H A N IC A L DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

Contextual Info: Product sp ecification P h ilip s Sem iconductors Schottky barrier double diodes FEATURES BAS40 series PINNING • Low forward voltage BAS40 PIN • Guard ring protected • Small SMD package • Low diode capacitance. -04 -05 -06 ki 1 ai ai ai 2 n.c. k2

BCW29R

Abstract: BCW30R SOT213 BCV72 BCW29 BCW30 BFQ31 BFQ31A ferranti SOT MARKING 213
Contextual Info: FERRANTI semiconductors BCW29 BCW30 PNP S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SOT-23 package these devices are designed sp e cifica lly fo r use in thin and th ick film

Contextual Info: ADC14155QML-SP www.ti.com SNAS378I – NOVEMBER 2008 – REVISED MARCH 2013 ADC14155QML 14-Bit, 155 MSPS, 1.1 GHz Bandwidth A/D Converter FEATURES DESCRIPTION • • • • • • • • • • The ADC14155 is a high-performance CMOS analogto-digital converter capable of converting analog input

WPCE775LA0DG

Abstract: oz8116 RTS5159 OZ8116LN oz8116l wpce775la winbond wpce775la0dg G780-1P81U N10M-GE1 G780
Contextual Info: 5 4 3 2 1 ZR6 SYSTEM BLOCK DIAGRAM BOM MARK IV@: INT VGA DDR3 PWR TPS51116 EV@: STUFF FOR EXT VGA D THERMAL PROTECTION X'TAL 14.318MHz SP@: STUFF FOR UMA or VGA Penryn 479 REV:C uFCPGA CLOCK GENERATOR ICS: SELGO: SLG8SP512TTR Fan Driver Thermal Sensor G780-1P81U

Contextual Info: ADC14155QML-SP www.ti.com SNAS378I – NOVEMBER 2008 – REVISED MARCH 2013 ADC14155QML 14-Bit, 155 MSPS, 1.1 GHz Bandwidth A/D Converter FEATURES DESCRIPTION • • • • • • • • • • The ADC14155 is a high-performance CMOS analogto-digital converter capable of converting analog input

BAV70

Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
Contextual Info: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99

5500a

Contextual Info: THS4304-SP www.ti.com SGDS038A – SEPTEMBER 2007 – REVISED OCTOBER 2007 RAD-TOLERANT CLASS V, WIDEBAND OPERATIONAL AMPLIFIER FEATURES DESCRIPTION/ORDERING INFORMATION 1 • • • • • • • • Wide Bandwidth: 1 GHz Minimum Gain of 2 V/V 6 dB High Slew Rate: 800 V/ s