SOT23 S07 Search Results

Contextual Info: 19-1240: Rev 0; 6/97 JVXA'AAJVX Sw itched-Capacitor Voltage Inverters _ Applications Local -5V Supply from 5V Logic Supply Features ♦ 5-Pin SOT23-5 Package ♦ 99% Voltage Conversion Efficiency ♦ Invert Input Supply Voltage ♦ 0.7mA Quiescent Current MAX870

PAA 737

Abstract: MAX6145 ebaa
Contextual Info: 75- 7777: Rev. 0; 12/96 JVWYXAJVX SOT23, Low-Cost, Low-Dropout, 3-Terminal Voltage References General Description Initial accuracy for these devices is ±1%. The output temperature coefficient is typically 15ppm/°C, and guarante ed to be less than 50ppm /°C except

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

74hc47

Abstract: 7S66 AX394 74HC4 AX395 C4351 tc7566
Contextual Info: Industry’s Only CMOS Switches with 20Q On-Resistance in 5-Pin SOT23 The Only Low-Voltage Switches Guaranteed for 2V Operation Devices in Maxim’s family of single-pole/single-throw SPST low-voltage sw itches not only feature normally open (NO) and norm ally closed (NC) functions, bu t are also available in 5-pin SO T 23 packages

ZR431

Contextual Info: ADJUSTABLE PRECISION ZENER SHUNT REGULATOR ZR431 ISSUE 1 - OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZR431 is a three terminal adjustable shunt regulator offering excellent tem perature stability and output current handling capability up to 100mA. The output voltage may be set

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

WMP7032

Abstract: WT-2307
Contextual Info: WMP7032 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERS 1 DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE Features: 2 SOURCE *Super high dense cell design for low Ros ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V

WT2307

Abstract: WT-2307
Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable

Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V

Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V

MARKING S07

Abstract: BS807 transistor s07
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A Dim Min Max A 0.37 0.51 B 1.19

transistor s07

Abstract: n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS807 DS11301 sot23 s07 MARKING S07 MARKING S07 SOT23
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data

MARKING S07

Abstract: DS11301 BS807 MARKING S07 SOT23
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D

ph 4148 zener diode

Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

ph 1n4148

Abstract: DO219AB Syd17m 1n914 SOD123 s07j Do219AB C 13 PH Zener diode 1N4148 sod123 ll4148 sod123 1n4148 ph 1N4148W SOD123
Contextual Info: S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal switching diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .

TRANSISTOR SOT-23 marking JE

Abstract: Diode SOT-23 marking JE BS807 MARKING S07 DS11301
Contextual Info: BS807 VISHAY N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR /Li T E M I ri / POWERSEMICONDUCTOR I Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly TOPiVIEW

Nippon capacitors

Abstract: MAX4166EPA
Contextual Info: >M yiXL*4 19-1224; Rev 0; 4/97 High-Output-Drive, Precision, Low-Power, Single Supply, Rail-to-Rail I/O Op Amps w ith Shutdown The MAX4166/MAX4168 have a shutdown mode that re d u ce s su p p ly cu rre n t to 38 jA per am p lifie r and places the outputs into a high-im pedance state. The

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

DS11301

Abstract: BS807 MARKING S07 SOT23
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly Mechanical Data Case: SOT-23, Plastic Terminals: Solderable per

s07a

Abstract: 21s07a 21s07 PAC21S07AS S50K 4.7 microfarad capacitor 22jL
Contextual Info: a OBJECTIVE » k CALIFORNIA MICRO DEVICES PAC ►► ► ► ► 2 1 S07A P/ACTIVE ACTIVE SCSI 2/3 TERM INATIO N NETW ORK Pin Assignments Features • • • • • • Fully backward com patible to th e industry standard 2107 and 2 1 S07A SCSI term inators

Contextual Info: Microsemi m Chatsworth, CA * Prog ress P o w ered b y T echnology 9261 Owensmouth Ave. Chatsworth, C a 91311 Phone: 81 8 7 0 1-4 9 3 3 Fax: (8 1 8 )7 0 1 -4 9 3 9 Features • • Surface Mount S O T-23 Package Capable of 350m W atts of Power Dissipation

1972.0005 Transformer

Abstract: MAGNETICA ferrite TRANSFORMER L6566B MAGNETICA TRANSFORMER T4A 392 fuse 100n x2 TSM1014 EER28L-PC44 6R8 SMD STPS20H
Contextual Info: AN3089 Application note 19 V - 65 W quasi-resonant flyback adapter using L6566B and TSM1014 Introduction This application note describes the characteristics and features of a 65 W demonstration board EVL6566B-65W-QR , tailored to the specifications of a typical hi-end portable

Contextual Info: 191257; Rev O: 7/97 > k iy j x i> k i Low-Dropout, 120mA Linear Regulators General Description The devices feature Dual Mode operation: their out­ put voltage is preset at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions or can be