SOT23 RIA MARKING Search Results

DNA 1002

Abstract: TE-5001 n014 jis c 5201-1 511j MARKING T20 SOT23 471j CAPACITOR 470M 471J diodes tvb
Contextual Info: NETWORKS Resistors / capacitors / diodes 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 4 IDENTIFICATION TYPE COATING COLOR MARKING

TE-5001

Abstract: MARKING W16 SOT23 HBM W20 rnx w16 DNA 1002 TVC 2 HB IEEE resistor color code RDA Q20 W16 sot 23 acd marking code
Contextual Info: NETWORKS Resistors / capacitors / diodes 3 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 2 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 4 IDENTIFICATION TYPE COATING COLOR MARKING

4051 spice models

Abstract: sot23 ria marking
Contextual Info: LM4051 Precision Micropower Shunt Voltage Reference General Description Key Specifications LM4051-1.2 Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature (3 mm x 1.3 mm) SOT-23 surface-mount package. The LM4051’s advanced design eliminates the need for an external stabilizing

DNA 1002

Abstract: RNX W16 marking s14 sot23 KPC T16 DNA MARKING CODE KOA KPC T16 Packaging marking code 8 lead soic-n package analog devices MARKING W16 SOT23 CODE DIODE
Contextual Info: NETWORKS TECHNOLOGY OF TOMORROW RESISTORS / CAPACITORS / DIODES 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC STRUCTURE 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 NETWORKS (PASSIVE COMPONENTS)

DNA 1002

Abstract: rnx w16 dn5 marking packaging resistor MARKING W16 SOT23 rnx Q24 DN6 marking diode
Contextual Info: NETWORKS TECHNOLOGY OF TOMORROW RESISTORS / CAPACITORS / DIODES 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC STRUCTURE 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 NETWORKS (PASSIVE COMPONENTS)

Contextual Info: NETWORKS KOA´S INTEGRATED PASSIVE COMPONENTS 3 THIN FILM ON SILICON TFOS KPC STRUCTURE 2 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 4 IDENTIFICATION Specifications given herein may be changed at any time without prior notice.

smd code marking TV sot23

Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r
Contextual Info: Low Noise SMD" Transistors Low Noise SMD Transistors Description Mechanical Data Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed low-current

sot23 1fe

Abstract: la 4142
Contextual Info: ¡SAMSUNG S EMI CONDUCTOR INC _ IME MMBT4125 D | 711,4142 QG072b7 1 | PNP EPITAXIAL SILICON TRANSISTOR T -a q -ñ GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C> Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage

semico

Abstract: MMBT3906 MMBT4125 VC820
Contextual Info: ¡ SAMSUNG S E M I C ON D U CT OR INC _ IME MMBT4125 D | 711,4142 QG072b7 1 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C> Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage

PMBF4416

Abstract: PMBF4416A
Contextual Info: Philips Semiconductors_ bb.53^31 DDSMOBS 6TT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E J> QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections

Contextual Info: MMBD914LT1* MAXIM UM RATINGS Rating Symbol Value Unit R e ve rse V o lta g e Vr 70 V dc F o rw a rd C u rre n t if 2 00 m Adc iF M su rq e 500 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W 'cC R# j a 556 -C 'W pd 300 mW 2.4 m W 'C RtfJA 417 T -W T J ' T stq

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diode BAW156LT1 This switching diode has the following features: Motorola Preferred Device Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel

E50U

Contextual Info: M AXIMUM RATINGS Rating Symbol Value VR 250 V dc if 200 m Adc 'F M su rq e 625 mA Symbol Max U n it PD 225 mW 1.8 m W -’C Ro ja 556 °c -w Pd 300 mW 2.4 m W .'X r (ÌJA 4 17 C o n tin u o u s R e ve rse V o lta g e P eak F o rw a rd C u rre n t Peak F o rw a rd S u rg e C u rre n t

LM4051

Abstract: LM4051AIM3-ADJ LM4051BIM3-ADJ MF03A RHA SOT23 ADJUSTABLE CURRENT regulator
Contextual Info: LM4051 Precision Micropower Shunt Voltage Reference General Description Key Specifications LM4051-1.2 Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature (3 mm x 1.3 mm) SOT-23 surface-mount package. The LM4051’s advanced design eliminates the need for an external stabilizing

Contextual Info: MAXIM UM RATINGS Unit Symbol Value R e verse V o lta g e VR 70 V dc F o rw a rd C u rre n t if 150 m Adc iF M su rq e 500 m Adc Rating P eak F o rw a rd S u rg e C u rre n t BAV99LT1* CASE 318-07, STYLE 11 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic

Contextual Info: M A X IM U M RATINGS Rating Peak R e verse V o lta g e D.C. R e verse V o lta g e M M B D 28 37 L T 1 M M B D 28 38 L T 1 Peak F o rw a rd C u rre n t A v e ra g e R e c tifie d C u rre n t Unit Symbol Value Vr m 75 V dc Vr 30 V dc *f m 450 300 m Adc [o 150

RHC resistor

Abstract: LM4051 LM4051AIM3-ADJ LM4051BIM3-ADJ MF03A sot23 ria marking
Contextual Info: LM4051 Precision Micropower Shunt Voltage Reference General Description j Low output noise Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature 3 mm x 1.3 mm SOT-23 surface-mount package. The LM4051’s advanced design eliminates the need for an external stabilizing

transistor smd ba rn

Abstract: LM7805 smd 8 pin transistor smd marking 431 transistor smd code marking 431 LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac transistor 431 smd transistor smd marking ND
Contextual Info: Semiconductor LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized pack­

Contextual Info: MOTOROLA Order this document by BAS19LT1/D SEMICONDUCTOR TECHNICAL DATA High V oltage Sw itching Diode BAS19LT1 Motorola Preferred Device 3 O CATHODE 14 O 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit VR 120 V dc if 200 m Adc iF M s u rg e 625 m Adc

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode BAS16LT1 3 O \4 CATHODE O 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 V dc if 20 0 m A dc iF M s u rg e 50 0 m A dc Symbol Max

LM4051

Abstract: lm4051adj RHA SOT23 AN-450 LM4041 MF03A LM4051-ADJ sot23 ria marking 01B SOT23 M3 SOT23-6
Contextual Info: ご注意：この日本語データシートは参考資料として提供しており内容 が最新でない場合があります。製品のご検討およびご採用に際 しては、必ず最新の英文データシートをご確認ください。

sot23 ria marking

Abstract: LM4051
Contextual Info: LM4051 LM4051 Precision Micropower Shunt Voltage Reference Literature Number: SNOS491C LM4051 Precision Micropower Shunt Voltage Reference General Description j Low output noise Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature 3 mm x

Contextual Info: LM4051 LM4051 Precision Micropower Shunt Voltage Reference Literature Number: SNOS491C LM4051 Precision Micropower Shunt Voltage Reference General Description j Low output noise Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature 3 mm x

ZC821

Abstract: NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC820 ZC822
Contextual Info: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICO N ION IM PLAN TED H YPERABRUPT TUNER D IO D ES Designed for use in HF, V H F and U HF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a sem iconductor doping technique enabling close control of doping and profile. Its