SOT23 N 09 Search Results

Contextual Info: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA

ST2N

Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications

2N7000 MOSFET

Abstract: 2n7000 equivalents 2N7000 2N7002 MARKING 2n7000 equivalent 2N7000G 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Description This MOSFET is the second generation of

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

ST2N

Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

BF862

Abstract: BP317 MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in

BST82

Abstract: HZG303
Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.

BSN20

Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

2N7002 Philips

Abstract: 03aa03 philips 2n7002
Contextual Info: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.

Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

03aa03

Contextual Info: PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 — 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PMBF170 in SOT23.

BSH111

Abstract: MSB003
Contextual Info: BSH111 N-channel enhancement mode field-effect transistor Rev. 01 — 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH111 in SOT23.

BSH112

Contextual Info: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.

Contextual Info: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.

ZO diode

Abstract: SOT230 SMSD3004
Contextual Info: TflEj metelics SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES * CORPORATION FEATURES Surface Mount Package Tape a n d Reel A vailable Reliability G old M etallized Chip Silicon N itride/O xide Passivation Low Series Resistance

bf862

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in

Contextual Info: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.

BF862

Abstract: marking code 2Ap fet junction n-channel transistor transistor 2ap Silicon N-Channel Junction FET sot23 fet-bf862 10102F SOT-23 marking code 2ap
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in

BT5401

Contextual Info: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C

SMSD3012

Contextual Info: SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES metelics CORPORATION MAXIMUM RATINGS PACKAGE CHARACTERISTICS Operating/Storage Temperature R a n g e -65°C to +150°C Max Power Dissipation per P a c k a g e .250mW

SMPN7316

Abstract: DIODE Z0 031
Contextual Info: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance

2N7002F

Abstract: SP SOT23 2N7002* application
Contextual Info: 2N7002F TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002F in SOT23. 2. Features

philips 2n7002e

Contextual Info: 2N7002E TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002E in SOT23. 2. Features