SOT23 FET Search Results

PMV45EN

Abstract: TPS40071
Contextual Info: NXP SOT23 MOSFET application 8-A POL converter with up to 89% efficiency using SOT23 MOSFETs This small, low-cost design, which combines NXP MOSFETs in SOT23 packages with a PWM controller from Texas Instruments, uses industry-standard construction and operating conditions

charging ic laptop motherboard

Abstract: ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN
Contextual Info: NXP 100-, 30-, and 20-V N-channel MOSFETs PMVseries in SOT23 packages Ultra-small µTrenchMOS MOSFETs in a SOT23 package Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny SOT23 packages, are an ideal choice for

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

ZVN3310F

Abstract: SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS on = 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

FET SOT23 60V

Contextual Info: Not Recommended for New Design Please Use ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT

Contextual Info: PART OBSOLETE - USE ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage

MX SOT23

Abstract: BS250F DSA003678
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 S D G PARTMARKING DETAIL – MX SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -45 V Continuous Drain Current at Tamb=25°C Pulsed Drain Current

ZVN3306F

Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

w2s sot23

Abstract: ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14 2 s D PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain — Sc, urce (;ontl~luuus

BSS138TA

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA

FET SOT23 60V

Abstract: BST82
Contextual Info: BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage non repetitive peak tp ≤ 2ms

DSS SOT23

Abstract: 2N7002
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT BS250F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 PARTMARKING DETAIL - M X SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current at Tam^2 5°C VALUE UNIT VDs -45 V *D -90 mA A Pulsed Drain Current

BSS138

Abstract: BSS138 50V Zetex bss138
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA

dm SOT23

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 O_ FEATURES os * 200 V o lt V, * R,DSion ,= 25Q PARTM ARKING DETAIL - M U SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER VALUE SYM BO L D ra in -S o u rce V o lta g e

SOT23 N-CHANNEL FET 100V

Abstract: BSS123 ZVN3310F VDS-100V
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123 ✪ ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL – SA S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 Drain-Gate Voltage VDGR 100 V Continuous Drain Current at Tamb=25°C

2N7002

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 4 – APRIL 2006 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C

ZVN3320F

Abstract: PARTMARKING at SOT23 FET DSA003736
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – DECEMBER 1995 FEATURES * 200 Volt VDS * RDS on = 25Ω ZVN3320F ✪ S D G PARTMARKING DETAIL – MU SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb =25°C

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996_ FEATURES * ^ D S I o n F 5 i2 * 60 V o lt V DS C O M PLEM ENTAR Y TYPE • ZVP3306F PAR TM ARKING DETAIL - MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z Pb-Free Package is Available. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel L2SA1037AKXLT1G SOT23 10000/Tape & Reel 2 SOT– 23

MV SOT23

Abstract: BS170F ZVN3306F
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

MV SOT23

Abstract: BS170F mv BS170F DSS SOT23 ZVN3306F DSA003678
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -O C T O B E R 1995 ZVN3310F O _ FEATURES * 100 V o lt V DS * R D S o n r1 0 ii C O M PLEM EN TAR Y T Y P E - ZVP3310F PARTM ARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 3 - JANUARY 1996_ FEATU RES * * R DS on = 5 ii 60 V olt V DS C O M P LEM EN T A R Y TYPE - ZVP3306F P A R T M A R K IN G D E T A IL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. SYM BO L