SOT23 FET Search Results

PMV45EN

Abstract: TPS40071
Contextual Info: NXP SOT23 MOSFET application 8-A POL converter with up to 89% efficiency using SOT23 MOSFETs This small, low-cost design, which combines NXP MOSFETs in SOT23 packages with a PWM controller from Texas Instruments, uses industry-standard construction and operating conditions

charging ic laptop motherboard

Abstract: ic laptop motherboard PMV213SN PMV117EN PMV31XN PMV45EN PMV56XN PMV60EN battery controller NXP PMV40UN
Contextual Info: NXP 100-, 30-, and 20-V N-channel MOSFETs PMVseries in SOT23 packages Ultra-small µTrenchMOS MOSFETs in a SOT23 package Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny SOT23 packages, are an ideal choice for

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

ZVN3310F

Abstract: SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS on = 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

MX SOT23

Abstract: BS250F DSA003678
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 S D G PARTMARKING DETAIL – MX SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -45 V Continuous Drain Current at Tamb=25°C Pulsed Drain Current

ZVN3306F

Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

BSS138TA

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS BSS138 S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 50 V Continuous Drain Current at Tamb=25°C ID 200 mA

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 BSS123 O PARTMARKING DETAIL -S A u SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 100 V V DGR 100 V Drain-Gate Voltage VALUE Continuous Drain Current at Tam f=2!i°C

2N7002

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 4 – APRIL 2006 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C

ZVN3320F

Abstract: PARTMARKING at SOT23 FET DSA003736
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – DECEMBER 1995 FEATURES * 200 Volt VDS * RDS on = 25Ω ZVN3320F ✪ S D G PARTMARKING DETAIL – MU SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb =25°C

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996_ FEATURES * ^ D S I o n F 5 i2 * 60 V o lt V DS C O M PLEM ENTAR Y TYPE • ZVP3306F PAR TM ARKING DETAIL - MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z Pb-Free Package is Available. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel L2SA1037AKXLT1G SOT23 10000/Tape & Reel 2 SOT– 23

MV SOT23

Abstract: BS170F ZVN3306F
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

MV SOT23

Abstract: BS170F mv BS170F DSS SOT23 ZVN3306F DSA003678
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170F ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS ON = 5Ω D S G PARTMARKING DETAIL – MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 60 V Continuous Drain Current at T amb=25°C

UM1017

Abstract: PMV45EN LTST-C190UBKT TPS40071 TPS40071PWP CHOKE COMMON NXP MOSFETs SOT23-MOSFET UM10177 LEDR10
Contextual Info: UM10177 8 A PoL converter using SOT23 MOSFETs Rev. 02 — 21 December 2007 User manual Document information Info Content Keywords SOT23 MOSFET PoL PMV45EN demo board Abstract Point of Load PoL converters are at the leading edge of power supply performance in terms of power density and efficiency, however,

86 sot23-8

Contextual Info: MIC863 Micrel MIC863 Dual Ultra Low Power Op Amp in SOT23-8 Final Information General Description Features The MIC863 is a dual low power operational amplifier in SOT23-8 package. It is designed to operate in the 2V to 5V range, rail-to-rail output, with input common-mode to ground.

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVP3306F ISSUE 3 -JAN UARY 1996 FEATURES * 60 V o lt Vos * Rosionr1^ s PARTM ARKING DETAIL - M L g CO M PLEM ENTAR Y TYPE - ZVN3306F SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e

86 sot23-8

Contextual Info: MIC863 Micrel MIC863 Dual Ultra Low Power Op Amp in SOT23-8 Final Information General Description Features The MIC863 is a dual low power operational amplifier in SOT23-8 package. It is designed to operate in the 2V to 5V range, rail-to-rail output, with input common-mode to ground.

86 sot23-8

Abstract: MIC863 MIC863BM8 MIC863YM8 MA4440
Contextual Info: MIC863 Micrel MIC863 Dual Ultra Low Power Op Amp in SOT23-8 Final Information General Description Features The MIC863 is a dual low power operational amplifier in SOT23-8 package. It is designed to operate in the 2V to 5V range, rail-to-rail output, with input common-mode to ground.

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 ZVN3320F O FEATURES * 2 0 0 V o lt V DS * ^ D S o n = o P A R T M A R K IN G D E T A IL - M U SOT23 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L D ra in -S o u r c e V o lta g e

charging ic laptop motherboard

Abstract: laptop ic list ic laptop motherboard PMV213SN PMV117EN PMV60EN PMV31XN PMV45EN PMV56XN battery controller
Contextual Info: µTrenchMOS 100, 30 and 20 V N-channel A new dimension in power MOSFETs in SOT23 Continuing Philips commitment to expand the innovative µTrenchMOS portfolio, the new PMV series of 100, 30 and 20 V N-channel MOSFETs brings this family's performance benefits to the industry standard SOT23 package. Ideal for a

Sanyo ni-mh

Contextual Info: MAX1722/MAX1723/ MAX1724 1.5µA IQ, Step-Up DC-DC Converters in Thin SOT23-5 General Description The MAX1722/MAX1723/MAX1724 compact, high-efficiency, step-up DC-DC converters are available in tiny, 5pin thin SOT23 packages. They feature an extremely low 1.5µA quiescent supply current to ensure the highest possible light-load efficiency. Optimized for operation from

Contextual Info: 19-1735; Rev 0; 7/01 1.5µA IQ, Step-Up DC-DC Converters in Thin SOT23-5 The MAX1722/MAX1723/MAX1724 compact, high-efficiency, step-up DC-DC converters are available in tiny, 5pin thin SOT23 packages. They feature an extremely low 1.5µA quiescent supply current to ensure the highest possible light-load efficiency. Optimized for operation from

BF862

Abstract: BP317 MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF862 N-channel junction FET Preliminary specification 1999 Jun 29 Philips Semiconductors Preliminary specification N-channel junction FET BF862 PINNING SOT23 FEATURES • High transition frequency for excellent sensitivity in