SOT-23 CEB Search Results

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

125OC

Abstract: MMBT2907A
Contextual Info: MMBT2907A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23

MMBT2222A

Abstract: MMBT2907A RS-200W
Contextual Info: MMBT2222A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Epitaxial planar die construction * Complementary PNP Type available(MMBT2907A) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT4403 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2T B E SOT-23

Contextual Info: MMBT4403 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23

MMBT4401

Contextual Info: MMBT4401 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC SOT-23

MMBT4401

Abstract: 303 SOT23
Contextual Info: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT4401 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 2X B E SOT-23 A

BCW66F/66G/66H

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW66F/66G/66H 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 0.8

K2X pnp

Abstract: K2X sot-23 K2X TO J-STD-020A MMBT4401 MMBT4401-7 MMBT4403 k2x transistor surface mount
Contextual Info: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 A C B Mechanical Data · · · · · · · · Case: SOT-23, Molded Plastic

brf92

Abstract: BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473
Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW · · · · · Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,

MMBT4401L-AL3-R

Abstract: MMBT4401G MMBT4401 MMBT4401-AE3-R MMBT4401L-AE3-R 1S2040
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ 3 DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-23 3 2 1 SOT-323 „

Contextual Info: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value

telefunken ta 750

Abstract: S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking
Contextual Info: S 416 T TELEFUNKEN Semiconductors Silicon PNP planar RF transistor Applications Oscillator in VHF tuner. Features D Especially suitable for VHF oscillators D SMD package Dimensions in mm Case 23 A 3 DIN 41 869 SOT 23 Marking: GA Weight max. 0.01 g Absolute Maximum Ratings

1N916

Abstract: BSR17A
Contextual Info: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*

2907 TRANSISTOR PNP

Abstract: MMBT2907 die 2907 pnp 2907a TRANSISTOR PNP MMBT2907A MMBT2907 2907 pnp transistor 2907A EQUIVALENT MMBT2907 ON 1N916 MMBT2222A
Contextual Info: General Purpose Transistor PNP COMCHIP www.comchiptech.com MMBT2907A Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) Mechanical Data

MMBTA42

Contextual Info: MMBTA42 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES • · · A suffix of "-C" specifies halogen & lead-free SOT-23 Plastic-Encapsulate Transistors Power dissipation & Collector current Pcm: 0.3W Icm: 0.3A

K2X pnp

Abstract: SOT-23 MARKING R2X MMBT4401 MMBT4403 R2X SOT23
Contextual Info: TRANSYS MMBT4401 ELECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 -H h -A fcl TOP VIEW Mechanical Data_

125OC

Abstract: MMBT2907LT1
Contextual Info: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range

K2X pnp

Abstract: K2X TO J-STD-020A MMBT4401 MMBT4401-7 MMBT4403
Contextual Info: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT4401 Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · · ·

Contextual Info: NEW PRODUCT NEW PRODUCT MMBT4401 SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) ♦ As complementary type, the PNP transistor MMBT4403 is recommended.

Contextual Info: NEW PRODUCT NEW PRODUCT MMBT4403 SMALL SIGNAL TRANSISTORS PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) ♦ As complementary type, the NPN transistor MMBT4401 is recommended.

R2X SOT23

Contextual Info: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW B C Mechanical Data

transistor C1000

Abstract: 2STR1230 2STR2230 C1000 09-Oct-2009
Contextual Info: 2STR1230 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits 3 2 1 Applications

MMBT4401

Abstract: TS4 MARKING
Contextual Info: MMBT4401 Switching Transistor NPN Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics Characteristics