SOT 23-5 MARKING CODE JS Search Results

Contextual Info: SMBD 6050 Silicon Switching Diode For high-speed switching applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8-m m tape Package SMBD 6 0 5 0 S5A upon request upon request SOT 23 M axim um ratings Param eter Symbol Reverse voltage

Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings

Contextual Info: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )

diode MARKING CODE jx

Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

Js MARKING CODE SOT23

Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

MARKING JS sot-23

Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

BAS19LT1

Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

diodes b

Abstract: AS21
Contextual Info: Silicon Switching Diodes • B AS 19 B AS 21 High-speed, high-voltage switch Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A S 19 B A S 20 B A S 21 JP JR JS Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95

Contextual Info: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708

K 2645 transistor

Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
Contextual Info: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W

TRANSISTOR BC 208

Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
Contextual Info: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers

diode tfk s 220

Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Contextual Info: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

tfk 19

Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

diode B14A

Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

transistor Bc 542

Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Contextual Info: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times

marking code ER sot 143

Abstract: HSMS-2827 SCHOTTKY DIODE SOT-143 AN1124 HSMS-286 marking cross ref sot-143 HSMS-2822 variable power divider 282P HSMS-28
Contextual Info: HSMS-282x Surface Mount RF Schottky ­Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to give

variable power divider

Abstract: marking code C9 282P HSMS-282K common base mixer circuit analysis marking cross ref sot-143 hsms2822 schottky diode limiter application note
Contextual Info: HSMS-282x Surface Mount RF Schottky ­Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to give

Transistor SJ 2517

Abstract: transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • ODD^SbS BUV70 ■¡nyilFttJlMlM electronic Cr*Miv«■fcchnotogte* T -33-13 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies features: • Implantation • • High reverse voltage • Triple diffusion

BAS21SLT1

Contextual Info: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BAS21SLT1

Contextual Info: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the