SOP32 PACKAGE Search Results

SOP32 525mil

Abstract: SOP32 525-mil
Contextual Info: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the

Contextual Info: |Ordering number: EN3K5088A CMOS LSI No. * 5088A J SA\YO LC372100PP, PM-10/LC3721OOPP, PM-20LV 2 MEG 262144 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC372100PP, PM -10 and LC372100PP, PM-20LV a re 2 0 9 7 1 5 2 -b it M ask P ro g ra m m a b le R e a d O nly

SOP32 20 pin Package

Abstract: SOP32
Contextual Info: Ordering number : EN% 5087A CMOS LSI No. 5K 5087A S A \Y O LC371100SP, SM-10/LC371100SP, SM-20LV 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-bit M ask Program m able Read Only

Contextual Info: [Ordering number : ENÌK5091A CMOS LSI No. i * 5091A S A \y o LC372200PP, PM-10/LC372200PR, PM-20LV 2 MEG 262144 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Package Dimensions Overview The LC372200PP, PM -10 and LC372200PP, PM-20LV

Contextual Info: ¡O rdering nu m b e r : E N SK5092A CMOS LSI NO .3& 5092A LC374200RP, RM-10/LC374200RP. RM-20LV 4 MEG 524288 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374200RP, RM-10 and LC374200RP, RM-20LV are 4 1 94304-bit M ask P rogram m able Read Only

DIP32-600

Contextual Info: lOrdering number : EN%5091A CMOS LSI NO.5K5091A S A \Y O LC372200PP, PM-10/LC372200PP, PM-20LV 2 MEG 262144 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC372200PP, PM-10 and LC372200PP, PM-20LV are 2097152-bit M ask P rogram m able Read Only

Contextual Info: Ordering number : ENÌ% 5090A CMOS LSI i SAÊlYO No. * 5090A LC378100PP, PM-10/LC3781OOPP, PM-20LV 8 MEG 1048576 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC3781OOPP, PM-10 and LC378100PP, PM-20LV are 8388608-bit Mask Programmable Read Only

Contextual Info: Ordering number : EN*5088C CMOS 1C LC372100PP, PM, PT-10/20LV 2 MEG 262144 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC 372100PP, LC 372100PM and LC372100PT are unit: mm 262,144-word x 8-bit organization (2,097,152-bit) mask

a20 tssop-8

Abstract: HN58X24512FPIAG Hitachi DSA00279 csp48
Contextual Info: HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs and EEPROM February, 2002 Product Marketing Team System Memory Business Unit Semiconductor and Integrated Circuits Hitachi, Ltd. HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs HITACHI Low Power SRAM and EEPROM

BS62LV4006EI

Abstract: BS62LV4006 BS62LV4006EC BS62LV4006PC BS62LV4006PI BS62LV4006SC BS62LV4006SI BS62LV4006STC BS62LV4006TC
Contextual Info: Very Low Power CMOS SRAM 512K X 8 bit BS62LV4006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : Operation current : 30mA Max. at 55ns VCC = 3.0V

TSOP2-32

Abstract: BS62LV4005 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005SC BS62LV4005SI BS62LV4005STC BS62LV4005STI BS62LV4005TC
Contextual Info: BSI Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4005 „ GENERAL DESCRIPTION „ FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Low power consumption Vcc = 5.0V C-grade: 45mA Max. operating current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current

BS62LV1023

Abstract: BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1023 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current

BS62UV1024

Abstract: BS62UV1024DC BS62UV1024JC BS62UV1024JI BS62UV1024PC BS62UV1024SC BS62UV1024SI BS62UV1024STC BS62UV1024TC BS62UV1024TI
Contextual Info: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1024 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current

BS62UV1024

Abstract: BS62UV1024DC BS62UV1024JC BS62UV1024JI BS62UV1024PC BS62UV1024SC BS62UV1024SI BS62UV1024STC BS62UV1024TC BS62UV1024TI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1024 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current

U-Chip Technology

Abstract: TSOP-32 UC62LS2008 UC62LS2008AC UC62LS2008AI UC62LS2008FC UC62LS2008FI UC62LS2008GC UC62LS2008GI UC62LS2008HC
Contextual Info: Low Power CMOS SRAM 256K X 8 Bits UC62LS2008 -20/-25 Description Features: • Vcc operation voltage : 3.0V ~ 3.6V • Low power consumption : 20mA Max. operating current 1uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V

UC62LV2008

Abstract: UC62LS4008AC UC62LS4008AI UC62LS4008FC UC62LS4008FI UC62LS4008GC UC62LS4008GI UC62LS4008HC UC62LS4008HI SRAM 512K BIT SOP32
Contextual Info: Low Power CMOS SRAM 512K X 8 Bits UC62LS4008 -20/-25 Description Features: • Vcc operation voltage : 3.0V ~ 3.6V • Low power consumption : 20mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V

Contextual Info: IOrdering number : ENì%47111 CMOS LSI LC338128P, M, PL, ML-70/80/10 SA\YO 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized

303F

Abstract: U634H256
Contextual Info: U634H256 PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25, 35 and 45 ns Access Times ‡ 10, 15 and 20 ns Output Enable Access Times ‡ ICC = 15 mA typ. at 200 ns Cycle

GPLB38C

Abstract: gpt1000a GPT1000 8512A GPL162006A A3400pro GPF32001 GPCE063A GPCE064A GPL16925X
Contextual Info: Created by Generalplus Product Data Center 2009/11/9 下午 05:33:26 Documents Information with memo (2009/10/9 ~ 2009/11/9) No Title Version Releaseed Date Memo Source 1 GPCE048A/063A/064A Confirmation Sheet 1.1 2009/10/9 1.Modify CPU Freq (MHz) 2.Add check item to Hardware / Software

Contextual Info: Very Low Power CMOS SRAM 128K X 8 bit Automotive Grade BS62LV1027 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 18mA Max. at 55ns

jedec ms-024

Abstract: BS62LV4006SA
Contextual Info: Very Low Power CMOS SRAM 512K X 8 bit Automotive Grade BS62LV4006 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns

tc551001

Abstract: TCS51001
Contextual Info: m m m m m rn rn Ml 32,768 WORDS x 8 BIT STATIC RAM PRELIMINARY DESCRIPTION The TC551001PL/FL is a 1,048,576 bit static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operates from a single 5V power supply. Advanced circuit techniques

100 mf capacitor

Abstract: ZMD cross reference ZMD AG
Contextual Info: U634H256 PowerStore 32K x 8 nvSRAM Features Description F High-performance CMOS non- The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in

U62H1708

Abstract: ZMD AG
Contextual Info: Preliminary U62H1708 Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The U62H1708 is a static RAM manufactured using a CMOS process technology with the following operating modes: