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    Abracon Corporation ASPI-M3015-4R7M-T

    Inductor: wire; SMD; 4.7uH; ±20%; 3A; 1.5mm; 150mΩ; -40÷125°C
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    TME ASPI-M3015-4R7M-T 6,000 2,000
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    Onlinecomponents.com ASPI-M3015-4R7M-T 6,000
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    Avnet Abacus ASPI-M3015-4R7M-T Tape & Reel 16 Weeks 2,000
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    Braemac Americas-Symmetry ASPI-M3015-4R7M-T 1
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    Master Electronics ASPI-M3015-4R7M-T
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    Abracon Corporation ASPI-M3015-2R2M-T

    Inductor: wire; SMD; 2.2uH; ±20%; 3.2x3.2x1.5mm; 3.6A; 85mΩ
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    TME ASPI-M3015-2R2M-T 6,000 2,000
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    Onlinecomponents.com ASPI-M3015-2R2M-T 6,000
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    Avnet Abacus ASPI-M3015-2R2M-T Tape & Reel 16 Weeks 2,000
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    Braemac Americas-Symmetry ASPI-M3015-2R2M-T 1
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    Master Electronics ASPI-M3015-2R2M-T
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    Abracon Corporation ASPI-M3015-1R0M-T

    Inductor: wire; SMD; 1uH; 3.2x3.2x1.5mm; 5.8A; H: 1.5mm; 42mΩ
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    TME ASPI-M3015-1R0M-T 6,000 2,000
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    Onlinecomponents.com ASPI-M3015-1R0M-T 6,000
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    Rochester Electronics ASPI-M3015-1R0M-T 2,000 1
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    Avnet Abacus ASPI-M3015-1R0M-T Tape & Reel 16 Weeks 2,000
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    Braemac Americas-Symmetry ASPI-M3015-1R0M-T 1
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    Master Electronics ASPI-M3015-1R0M-T
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    Abracon Corporation ASPI-M3015-3R3M-T

    Inductor: wire; SMD; 3.3uH; Ioper: 2.1A; Isat: 3.3A; 1.5mm; -40÷125°C
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    TME ASPI-M3015-3R3M-T 4,000 2,000
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    Newark () ASPI-M3015-3R3M-T Tape & Reel 1,470 100
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    ASPI-M3015-3R3M-T Cut Tape 1,470 5
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    Onlinecomponents.com ASPI-M3015-3R3M-T 4,000
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    Bristol Electronics ASPI-M3015-3R3M-T 1,961 1
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    Avnet Abacus ASPI-M3015-3R3M-T Tape & Reel 16 Weeks 2,000
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    Braemac Americas-Symmetry ASPI-M3015-3R3M-T 1
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    Master Electronics ASPI-M3015-3R3M-T
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    Mean Well IRM-30-15ST

    Power supply: switching; for building in,modular; 30W; 15VDC
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    TME IRM-30-15ST 60 1
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    Avnet Americas IRM-30-15ST Box 19 Weeks, 3 Days 1
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    Mouser Electronics IRM-30-15ST 143
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    Newark IRM-30-15ST Bulk 6 1
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    RS IRM-30-15ST Bulk 20 Weeks 1
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    Sager IRM-30-15ST 83 1
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    Master Electronics IRM-30-15ST 88
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    Neutron USA IRM-30-15ST 50
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    M3015 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOP32 data sheet

    Abstract: PDIP32 PDIP-32-600
    Contextual Info: U631H1708 Advanced Information SoftStore 128K x 8 nvSRAM Description 5 5 5 0 to 70 ° C -40 to 85 °C CECC 90000 Quality Standard ESD protection > 2000 V MIL STD 883C M3015.7 Packages: SOP32 (450 mil) PDIP32 (600 mil) Pin Configuration n.c. A16 A14 A12 A7


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    u631h1708m3015pdip32d-01109+3d-01101sop32 data sheetpdip-32-600 PDF

    PDIP28

    Abstract: U630H64
    Contextual Info: U630H64 HardStore 8K x 8 nvSRAM F Features ESD characterization according MIL STD 883C M3015.7-HBM classification see IC Code Numbers Packages: PDIP28 (300 mil) SOP28 (330 mil) F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F


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    u630h64m3015pdip28d-01109+1d-01101 PDF

    PDIP24

    Abstract: U6216A
    Contextual Info: U6216A F ESD protection > 2000 V MIL STD 883C M3015.7 F Latch-up immunity >100 mA F Packages: PDIP24 (600 mil) Features F 2048 x 8 bit static CMOS RAM F 70 and 85 ns Access Times F Common data inputs and data outputs F Three-state outputs F Typ. operating supply current


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    u6216am3015pdip24d-01109+1d-01101 PDF

    PDIP28

    Abstract: U630H64
    Contextual Info: U630H64 HardStore 8K x 8 nvSRAM F Features ESD characterization according MIL STD 883C M3015.7-HBM classification see IC Code Numbers Packages: PDIP28 (300 mil) SOP28 (330 mil) F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F


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    u630h64m3015pdip28d-01109+1d-01101 PDF

    SOP32 data sheet

    Abstract: PDIP32 U632H1708 a14g
    Contextual Info: U632H1708 Advanced Information PowerStore 128K x 8 nvSRAM Description 5 5 5 0 to 70 °C -40 to 85 °C CECC 90000 Quality Standard ESD protection > 2000 V MIL STD 883C M3015.7 Packages: SOP32 (450 mil) PDIP32 (600 mil) Pin Configuration VCAP A16 A14 A12 A7


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    u632h1708m3015pdip32d-01109+3d-01101sop32 data sheeta14g PDF

    U6216A

    Abstract: PDIP24
    Contextual Info: U6216A F ESD protection > 2000 V MIL STD 883C M3015.7 F Latch-up immunity >100 mA F Packages: PDIP24 (600 mil) Features F 2048 x 8 bit static CMOS RAM F 70 and 85 ns Access Times F Common data inputs and data outputs F Three-state outputs F Typ. operating supply current


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    u6216am3015pdip24d-01109+1d-01101 PDF

    Q3236

    Abstract: PE9601 PE9601EK 9601-11 96011
    Contextual Info: Product Specification PE9601 2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications Product Description Peregrine’s PE9601 is a high performance integer-N PLL capable of frequency synthesis up to 2200 MHz. The device is designed for superior phase noise performance while


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    pe9601q3236pe9601ek9601-11+196011 PDF

    303F

    Abstract: PDIP28 U637256 ZMD AG
    Contextual Info: U637256 CapStore 32K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U637256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


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    u637256d-01109d-01101303f+2pdip28zmd ag PDF

    3335-21

    Abstract: PE3236 PE3335 PE3335EK
    Contextual Info: ADVANCE INFORMATION PE3335 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE3335 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior phase noise performance of the PE3335 is ideal


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    pe3335pe32363335-21pe3335ek PDF

    PDIP24

    Abstract: PDIP32 U631H256 U631HM1024 SOP44
    Contextual Info: U631HM1024 Advanced Information SoftStore 128K x 8 nvSRAM Description Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM Module 4 x 32768 x 8 bits 25, 35 and 45 ns Access Times 10, 15 and 20 ns Output Enable Times Software STORE Initiation


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    u631hm1024m3015pdip32pdip24+4d-01109d-01101u631h256sop44 PDF

    PDIP28

    Abstract: U631H16 ZMD AG
    Contextual Info: U631H16 SoftStore 2K x 8 nvSRAM Features ! High-performance CMOS nonvola! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable


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    u631h16pdip28d-01109d-01101+1zmd ag PDF

    ATmega32H

    Abstract: PV15100 PCIE10 atmel 718 ac chopper ATMEGA64HVE2
    Contextual Info: Atmel ATmega32HVE2/ATmega64HVE2 8-bit AVR Microcontroller with Precise Analog Frontend for very Accurate Voltage and Current Measurement PRELIMINARY DATASHEET Features ● Single-package fully-integrated ● High precision analog frontend ● 17bit single-ended voltage-ADC


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    atmega32hve2/atmega64hve217bitsaej2602-2atmega32h+5pv15100pcie10atmel 718ac chopperatmega64hve2 PDF

    Q3236

    Abstract: pe3236 PE3236EK
    Contextual Info: PRODUCT SPECIFICATION PE3236 2.2 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE3236 is a high performance integer-N PLL capable of frequency synthesis up to 2.2 GHz. The superior phase noise performance of the PE3236 is ideal


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    pe3236q3236pe3236ek PDF

    PLCC32

    Abstract: U630H16 U630H16PA35 GR47 all stk ic diagram
    Contextual Info: U630H16PA35 HardStore 2K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In


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    u630h16pa35to125m3015plcc32+3u630h16gr47all stk ic diagram PDF

    PE83341

    Abstract: PE83341-EK PE83341-PK
    Contextual Info: PRELIMINARY SPECIFICATION 4 PE83341 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE83341 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis


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    pe83341pe83341-ekpe83341-pk PDF

    PE3339

    Abstract: PE83342
    Contextual Info: PRELIMINARY SPECIFICATION 4 PE83342 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE883342 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis up to 2.7 GHz with a speed-grade option to 3.0


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    pe83342pe883342pe3339 PDF

    75l00d

    Contextual Info: áç XRT75L00D E3/DS3/STS-1 LINE INTERFACE UNIT WITH SONET DESYNCHRONIZER NOVEMBER 2003 REV. 1.0.1 • On-chip clock synthesizer provides the appropriate GENERAL DESCRIPTION The XRT75L00D is a single-channel fully integrated Line Interface Unit LIU with Sonet Desynchronizer


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    xrt75l00d75l00d PDF

    Contextual Info: XRT75L04 xr FOUR CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT WITH JITTER ATTENUATOR JANUARY 2006 GENERAL DESCRIPTION The XRT75L04 is a four-channel fully integrated Line Interface Unit LIU with Jitter Attenuator for E3/DS3/ STS-1 applications. It incorporates four independent


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    xrt75l04 PDF

    Contextual Info: XRT73L02M xr TWO CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT MAY 2003 GENERAL DESCRIPTION The XRT73L02M is a two-channel fully integrated Line Interface Unit LIU for E3/DS3/STS-1 applications. It incorporates independent Receivers, Transmitters in a single 100 pin TQFP package.


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    xrt73l02mxrt73l02miv-ftqfp100 PDF

    MO-153-AC

    Abstract: PE83339 PE83339EK
    Contextual Info: PRELIMINARY SPECIFICATION PE83339 Military Operating Temperature Range 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Features • 3.0 GHz operation • ÷10/11 dual modulus prescaler • Internal phase detector with charge pump


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    pe8333920-leadmo-153-acpe83339ek PDF

    34.368Mhz oscillator

    Abstract: chn 543
    Contextual Info: XRT75L03 THREE CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT WITH JITTER ATTENUATOR JULY 2003 GENERAL DESCRIPTION The XRT75L03 is a three-channel fully integrated Line Interface Unit LIU with Jitter Attenuator for E3/ DS3/STS-1 applications. It incorporates 3


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    xrt75l0334.368mhz oscillatorchn 543 PDF

    chn 923

    Contextual Info: xr XRT75R03 THREE CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT WITH JITTER ATTENUATOR MARCH 2005 REV. 1.0.7 GENERAL DESCRIPTION TRANSMITTER: The XRT75R03 is a three-channel fully integrated Line Interface Unit LIU featuring EXAR’s R3 Technology (Reconfigurable, Relayless Redundancy)


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    xrt75r03chn 923 PDF

    Contextual Info: U 63 5 H 2 5 6 SOFTWARE NONVOLATILE RECALL HARDWARE PROTECT A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ opera­


    OCR Scan
    u635h256 PDF

    Contextual Info: U 63 1 H 2 5 6 A v a i l a b l e in Q1 /97 Software Controlled 32Kx 8 nvSRAM Features Description □ High-performance CMOS non­ volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,15 and 20 ns G-Access □ Software STORE Initiation


    OCR Scan
    m3015pdip28u631h256 PDF