SOLDER BALL PLACEMENT Search Results

WLCSP flip chip

Abstract: WLCSP smt 0.3mm pitch csp package wlcsp inspection WLCSP chip mount WLCSP PBO design amkor flip amkor RDL amkor polyimide system in package WLCSP underfill
Contextual Info: data sheet wafer level packaging WLCSP Features • 4 - 196 ball count • 0.8 mm – 6.5 mm body size • Repassivation, Redistribution and Bumping options available • Electroplated and Ball-loaded bumping options • Eutectic and Lead-free solder • Standard JEDEC / EIAJ pitches and CSP solder ball diameters

Contextual Info: SMM5139XZ 12.7 – 15.4GHz Down converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier, Low Noise Amplifier • Conversion Gain : 10dB • Input Third Order Intercept Point IIP3 : +2dBm

ceramic rework

Abstract: CCGA BGA Solder Ball collapse 90Pb 10Sn solder paste 304-pin ltcc MPC105 MPC106 MPC107 BGA PROFILING spray nozzles
Contextual Info: Ceramic Ball Grid Array Packaging, Assembly & Reliability Freescale Semiconductor 1 Outline for Discussion • • • • • • Why BGA? CBGA Introduction and Package Description PC Board Design for CBGA CBGA Assembly Rework Board-Level Solder Joint Reliability

Contextual Info: SMM5138XZ 12.7 – 15.4GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier • Conversion Gain : -13dB • Input Third Order Intercept IIP3 : +22dBm • LO-RF Isolation : 30dBc

Contextual Info: Preliminary ES/SMM5141XZ 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm

Contextual Info: Preliminary ES/SMM5143XZ 24 – 30GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +24dBm

JEP95 MS-028

Contextual Info: SMM5146XZ 12.7 – 15.4GHz Down converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier, Low Noise Amplifier and x2 multiplier • 10dB Conversion Gain :10dB • Input Third Order Intercept Point IIP3 : +2dBm

UA42

Abstract: VFBGA-48 bga rework aa56 yamaichi socket
Contextual Info: Design Summary for 56GQL 48- and 56-pin functions MicroStar Junior TM BGA PCB Design Guidelines Package Via to Board Land Area Configuration Trace Width/Spacing Dimensions (mm [in.]) Non-Solder Mask Defined Pad MicroStar Junior Package Package ball via 0.2±0.05mm

Contextual Info: SMM5145XZ 12.7 – 15.4GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept IIP3 : +22dBm • 2LO-RF Isolation : 45dB

JEP95 MS-028

Contextual Info: ES/SMM5723XZ Preliminary 17 – 24GHz Low Noise/ Driver Amplifier MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Low Noise Figure : NF=2.7dB typ. • High Associated Gain : Gas=20dB (typ.) • Input Third Order Intercept Point (IIP3) : +4dBm

JEP95 MS-028

Contextual Info: SMM5146XZ 12.7 – 15.4GHz Down converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier, Low Noise Amplifier and x2 multiplier • 10dB Conversion Gain :10dB • Input Third Order Intercept Point IIP3 : +2dBm

Contextual Info: Preliminary ES/SMM5144XZ 24– 30GHz Down converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, Low Noise Amplifier, LO Buffer Amplifier and x2 multiplier • Conversion Gain : 12dB • Input Third Order Intercept Point IIP3 :+2dBm

Contextual Info: SMM5722XZ 12 – 16GHz Low Noise/ Driver Amplifier MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Low Noise Figure : NF=2.3dB typ. • High Associated Gain : Gas=20dB (typ.) • Input Third Order Intercept Point (IIP3) : +5dBm • Low Current Consumption : IDD_LNA=30mA

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 36Mb QDR II SRAM 4-WORD BURST MT54W4MH8J MT54W4MH9J MT54W2MH18J MT54W1MH36J FEATURES Figure 1 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports with

micron sram

Abstract: MT54W1MH36B MT54W2MH18B MT54W4MH8B MT54W4MH9B
Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 36Mb QDR II SRAM 2-WORD BURST MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B FEATURES Figure 1 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports

1.8V SRAM

Contextual Info: 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 18Mb QDR II SRAM 2-WORD BURST MT54W2MH8B MT54W1MH18B MT54W512H36B FEATURES • DLL circuitry for accurate output data placement • Separate independent read and write data ports with concurrent transactions

MT57W2MH8B

Abstract: MT57W512H36B MT57W1MH18B
Contextual Info: 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B Features • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

ball 128 mcp

Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
Contextual Info: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet

MT57W1MH18BF-xx

Abstract: MT57W1MH18BF
Contextual Info: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb2 SRAM 18Mb DDRII CIO SRAM 2-Word Burst MT57W2MH8B MT57W1MH18B MT57W512H36B FEATURES • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

Contextual Info: S71VS/XS-R Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode pSRAM 256/128/64 Mb 16/8/4 Mb x 16-bit Flash, 128/64/32 Mb (8/4/2 Mb x 16-bit) pSRAM S71VS/XS-R Memory Subsystem Solutions Cover Sheet

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 36Mb QDR II SRAM 4-WORD BURST MT54W4MH8J MT54W4MH9J MT54W2MH18J MT54W1MH36J Features Figure 1: 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports with

Contextual Info: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 18Mb DDRII CIO SRAM 4-WORD BURST MT57W2MH8J MT57W1MH18J MT57W512H36J Features • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 36Mb QDR II SRAM 2-WORD BURST MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B Features Figure 1: 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)