SOI SWITCHES Search Results

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)

CDIP2-T28

Contextual Info: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)

Transistors smd A7H

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

smd transistor NJ

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)

1kx1 static ram

Abstract: 80c85 S6504 A10 dual operational cmos ttl level shifter S6532 S3374 s7616
Contextual Info: HARRIS SEflICOND SECTOR i-/lyu/il t i j IfaE D • 43 05271 OOlSlTfl b ■ HS-65641/44/45RH HS-65646/48RH HARRIS PREVIEW Radiation Hardened Asynchronous 64K SOI CM O S Static RAM Family May 1988 Features • 1.2 Micron Radiation Hardened SOI CM O S 1 X106RAD Si

E310A

Abstract: HLX6228
Contextual Info: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 35 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

lt 6228

Abstract: TRANSISTOR A7h
Contextual Info: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |a,m Low Power Process (Leff= 0.5 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C)

HX6856

Contextual Info: b3E » Honeywell 4551Ö72 OGODTTS S71 • H 0 N 3 Military Products HON E Y I i J E L L / S S E C Preliminary 32K X 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 urn Process

D-10

Abstract: HLX6256 CDIP2-T28 nmos dynamic ram 6256
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

D-10

Abstract: HLX6256
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

HX6408

Contextual Info: Honeywel Advance Information Aerospace Electronics HX6408 512K x 8 STATIC RAM— SOI FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 2 5 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 |a,m Process (Leff = 0.28 |a,m)

Modeling of SOI FET for RF Switch Applications

Contextual Info: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is

CF173

Abstract: bosch ic IC BOSCH can controller bosch bosch 12v 100 Bosch BOSCH 8.1 12V bosch bosch cf173
Contextual Info: Automotive Electronics  Package: SOI C8 Product Information CAN Bus Transceiver – CF173 Customer benefits:  Excellent system know-how  Smart concepts for system safety  Secured supply  Long- term availability of manufacturing processes and products

PE42480

Contextual Info: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding

CPC7220

Abstract: CPC7220W CPC7221
Contextual Info: CPC7220/CPC7221 Low Charge Injection 8-Channel High Voltage Analog Switch Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)

Optimized CMOS-SOI Process for High Performance RF Switches

Contextual Info: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in

Contextual Info: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

transistor npn c 9012

Abstract: HFA3101BZ 5GHz band pass filter
Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)