SOF MARKING Search Results

Contextual Info: SPD-2226Z SPD-2226Z 40MHz to 1000MHz Dual GaAs HFET Amplifier 40MHz to 1000MHz DUAL GaAs HFET AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 Product Description Features Optimum Technology Matching Applied    Applications  Simplified Device Schematic

spd-2226

Abstract: SPD2226Z SPD2226ZSQ SPD2226 SPD2226ZSB SPD2226Z-EVB1
Contextual Info: SPD-2226Z SPD-2226Z 40MHz to 1000MHz Dual GaAs HFET Amplifier 40MHz to 1000MHz DUAL GaAs HFET AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 Product Description Features Optimum Technology Matching Applied    Applications  Simplified Device Schematic

spd2226z

Abstract: RFXF5793 2226z spd-2226 SPD-2226Z SOF-26
Contextual Info: SPD-2226Z SPD-2226Z 40MHz to 1000MHz Dual GaAs HFET Amplifier 40MHz to 1000MHz DUAL GaAs HFET AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPD-2226Z is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

Contextual Info: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  P1dB =33.5dBm at 5V, 2.4GHz  802.11g 54Mb/s Class AB Performance

Contextual Info: SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP Amplifier SZP-2026Z Preliminary 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor

Contextual Info: SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier SZP-3026Z Preliminary 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor

SOF-26

Abstract: SZP-3026Z
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

SZP-2026Z

Abstract: rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic
Contextual Info: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology

SZP-2026

Contextual Info: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology

Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

600S100JW250X

Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

SPD2226

Contextual Info: SPD-2226Z SPD-2226Z 40MHz to 1000MHz Dual GaAs HFET Amplifier 40MHz to 1000MHz DUAL GaAs HFET AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 Product Description Features RFMD’s SPD-2226Z is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

SZP-3026Z

Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

Cap 0603 X7R

Abstract: SOF-26 SZP-2026Z recommended land pattern for 0402 cap
Contextual Info: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology

Contextual Info: LRI2K 2048 bit EEPROM TAG IC at 13.56 MHz with 64-bit UID and KILL code, ISO15693 and ISO18000-3 Mode 1 compliant Preliminary Data Features • ISO15693 standard fully compliant ■ ISO18000-3 mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency

ISO15963

Abstract: CRC16 ISO15693 1 out of 4 inventory request block diagram of VCD block diagram of VCD and its functions ISO15693 ISO18000-3 ISO10373-7
Contextual Info: LRI2K Memory TAG IC, 64 bit UID, 2048 bit EEPROM with KILL Code 13.56MHz, ISO15693 and ISO18000-3 Mode 1 compliant PRELIMINARY DATA Features summary • ISO15693 Standard Fully Compliant ■ ISO18000-3 Mode 1 Standard Fully Compliant ■ 13.56MHz ±7kHz Carrier Frequency

Contextual Info: LRI2K 13.56 MHz, 2048-bit EEPROM tag IC with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Preliminary Data Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency

a1s marking

Abstract: block diagram of VCD block diagram of VCD and its functions marking AFI sof marking 3491H
Contextual Info: LRI2K 13.56 MHz, 2048-bit EEPROM tag IC with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency ■ To tag: 10% or 100% ASK modulation using

marking a7t

Abstract: block diagram of VCD block diagram of VCD and its functions decision support system of an airline sof marking marking A1t SUBCaRRIER MODULATION 13,56 mhz antenna
Contextual Info: LRI2K 13.56 MHz, 2048-bit EEPROM tag IC with 64-bit UID and kill code, ISO 15693 and ISO 18000-3 Mode 1 compliant Features • ISO 15693 standard fully compliant ■ ISO 18000-3 Mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency ■ To tag: 10% or 100% ASK modulation using

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00001-4v0-E ASSP ISO/IEC 15693 Compliant FRAM Embedded TM High-speed RFID LSI MB89R118C • DESCRIPTION The MB89R118C is a vicinity type of RFID LSI device embedded with 2 Kbytes FRAM, which enables fast and frequent write operation.

DC Link capacitor calculation

Abstract: ufdfpn8 pad ISO15693 ISO18000-3 ISO-1800
Contextual Info: LRIS2K 2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant Preliminary Data Features • ISO15693 standard fully compliant ■ ISO18000-3 mode 1 standard fully compliant ■ 13.56 MHz ±7 kHz carrier frequency

500bp

Abstract: 15693-compliant
Contextual Info: 19-5623; Rev 0; 11/10 KIT ATION EVALU E L B AVAILA ISO 15693-Compliant 1Kb Memory Fob The MAX66120 combines 1024 bits of user EEPROM, a 64-bit unique identifier UID , and a 13.56MHz ISO 15693 RF interface in a plastic key fob. The memory is organized as 16 blocks of 8 bytes plus two more blocks

AC MOTOR SPEED CONTROL USING IGBT

Abstract: SMCV6G120
Contextual Info: . SMCV6M120-025, SMCV6M150-010 SMCV6G080-120, SMCV6G120-060 SENSITRON SEMICONDUCTOR DATA SHEET 5324, REV - DIGITAL SPEED CONTROLLER BRUSHLESS DC MOTOR DRIVER MODULE 100V/80A, 250V/60A, 600V/50A, 1200V/40A Features • • • Sinusoidal Sensorless/Resolver/Hall

m24lr04

Abstract: M24LR04E-RDW M24LR04E-R 24L04 m24lr04e ISO103
Contextual Info: M24LR04E-R 4-Kbit EEPROM with password protection, dual interface & energy harvesting: 400 kHz I²C bus & ISO 15693 RF protocol at 13.56 MHz Datasheet - production data Contactless interface • ISO 15693 and ISO 18000-3 mode 1 compatible • 13.56 MHz ±7k Hz carrier frequency