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    DS091202 Search Results

    DS091202 Datasheets Context Search

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    ATC800A

    Abstract: RF3931 ER35
    Contextual Info: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ „ Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB


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    rf3931ear99cellul01lgrm55er72a475ka01l+4100ufece-v1ha101upatc800aer35 PDF

    SZP-3026Z

    Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
    Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


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    szp-3026zsof-26ds091202szp3026z+4szp3026z-evb1ma 529szp30263.5ghz bjt PDF

    SZP-5026

    Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
    Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power


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    szp-5026zsof-26szp5026zszp5026z-evb1+10szp5026z-evb215ghz35ghzds091202szp-5026600s5r6cw2505.7ghz low noise amplifiermlcc reworkrecommended land pattern for 0402 cape483 PDF

    Cap 0603 X7R

    Abstract: SOF-26 SZP-2026Z recommended land pattern for 0402 cap
    Contextual Info: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar  Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology


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    szp-2026zsof-26o026zszp2026z+5szp2026z-evb1szp2026z-evb2ds091202cap 0603 x7rrecommended land pattern for 0402 cap PDF

    Contextual Info: PC2600AE-47H PC2600AE47HLow Noise, High Gain SiGe HBT 2470MHz TO 2730MHz DROP-IN CIRCULATOR Package: Drop-in, 0.75inx0.75in Product Description Features The PC2600AE-47H is a small, low cost drop-in circulator designed for applications in high performance linear power amplifiers for wireless infrastructure base stations. These circulators feature a robust construction for


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    pc2600ae-47hpc2600ae47hlow2470mhz2730mhz+375inx0-70dbcds091202 PDF

    DROP-IN CIRCULATOR

    Contextual Info: PC2140AE-48H PC2140AE48HLow Noise, High Gain SiGe HBT 2110MHz TO 2170MHz DROP-IN CIRCULATOR Package: Drop-in, 0.75inx0.75in Product Description Features The PC2140AE-48H is a small, low cost drop-in circulator designed for applications in high performance linear power amplifiers for wireless infrastructure base stations. These circulators feature a robust construction for


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    pc2140ae-48hpc2140ae48hlow2110mhz2170mhz+475inx0-70dbcds091202drop-in circulator PDF