SOD-123 MARKING CODE T4 Search Results

MMSZ4V7T1G

Abstract: MMSZ5V6T1G mmsz10t1g zener marking code V5 SOD123 mmsz4v3t1g MMSZ5V1T1G SOD-123 marking code T4 MMSZ13T1G MMSZ3V3T1G MMSZ22T1G
Contextual Info: MMSZxxxT1G Series, SZMMSZxxxT1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style.

zener marking code u3 t3

Abstract: MMSZ10t1
Contextual Info: MMSZxxxT1 Series, SZMMSZxxxT1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style.

zener marking code u3 t3

Abstract: zener marking code V5 SOD123
Contextual Info: MMSZ2V4T1 Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style.

zener marking code u3 t3

Abstract: MMSZ7V5T1 MMSZ10T1 MMSZ11T1 MMSZ12T1 MMSZ13T1 MMSZ15T1 MMSZ16T1 MMSZ18T1 MMSZ20T1
Contextual Info: MMSZ2V4T1 Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style.

MMSZ10T1

Abstract: MMSZ11T1 MMSZ12T1 MMSZ13T1 MMSZ15T1 MMSZ16T1 MMSZ18T1 MMSZ20T1 MMSZ22T1 MMSZ24T1
Contextual Info: MMSZ2V4T1 Series Zener Voltage Regulators 500 mW SOD–123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD–123 package. These devices provide a convenient alternative to the leadless 34–package style.

transil 428

Contextual Info: SGS-THOMSON M ^©iy! gïïM KiO(gi sm4T6V8, A/220, a SM4T6V8C,CA/220C,CA TRANSIL FEATURES . PEAK PULSE POWER= 400 W @ 1ms. • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR).

marking H5 sot 23-5

Abstract: H2A SOT-23-6 18w sot23 transistor SC82 TR13 LPCC-16 marking h5 sot-23-5 20w sc82 sot-23 diode marking code 20W H1 SOT-89
Contextual Info: BRD8011/D Rev. 0, May-2002 Tape and Reel Packaging Specifications ON Semiconductor ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

SMA marking code LG

Abstract: MPS3904 MPS3904RLRA radial leaded TVS Motorola Master Selection Guide
Contextual Info: Tape and Reel Specifications and Packaging Specifications Page Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . 5.12–2 Embossed Tape and Reel Ordering Information . 5.12–3 Embossed Tape and Reel Data for Discretes . . . 5.12–4 Lead Tape Packaging Standards

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

T4302

Contextual Info: NTD4302 Power MOSFET 68 Amps, 30 Volts N−Channel DPAK Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

t1p42

Abstract: TIP41 SOT323
Contextual Info: MJB41C NPN , MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.com • Lead Formed for Surface Mount Applications in Plastic Sleeves • • (No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix)

Contextual Info: NTD60N03 Power MOSFET 60 Amps, 28 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • Power Supplies Converters

N20E

Abstract: t4n20e on semiconductor marking n20e 4n20e 369D AN569 MTD4N20E MTD4N20ET4 MARKING CODE diode sod123 t4 T4 N20E
Contextual Info: MTD4N20E Preferred Device Power MOSFET 4 Amps, 200 Volts N−Channel DPAK Symbol Value Unit Drain−Source Voltage VDSS 200 Vdc Drain−Gate Voltage RGS = 1.0 MΩ VDGR 200 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

TIP41 SOT323

Abstract: TIP41 SOT23 1N5825 MJB41C MJB41CT4 MJB42C MJB42CT4 MSD6100 T1P42 TIP41
Contextual Info: MJB41C NPN , MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.com • Lead Formed for Surface Mount Applications in Plastic Sleeves • • (No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix)

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com

AN569

Abstract: MTD2955 MTD2955E MTD2955ET4 SMD310 power MOSFET SC-59 80 Volts MARKING CODE diode sod123 t4
Contextual Info: MTD2955E Preferred Device TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient

t40n10e

Abstract: T40N10 2305 SOT-23 MTB40N10ET4 AN569 MTB40N10E sot-223 body marking A G
Contextual Info: MTB40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

t2955e

Abstract: T2-955e
Contextual Info: MTD2955E Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.

w2 mark 5 pin mosfet smd

Abstract: Philips SC07 Small-signal Transistors transistor bf 175
Contextual Info: For an update of this information, please go to the package website. SC18_1999_.book : SC18_PREFACE_1999 i Wed May 12 11:40:55 1999 Philips Semiconductors Discrete Semiconductor Packages Preface TABLE OF CONTENTS Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii

smd code marking SP3

Abstract: ST72262G2 SDIP32 ST72260G ST72260G1 ST72262G ST72262G1 ST72264G ST72264G1 ST72264G2
Contextual Info: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at

ST72262G2

Abstract: smd transistor marking sp1 TRANSISTOR SMD MARKING CODE 2301 SDIP32 ST72260G ST72260G1 ST72262G ST72262G1 FR MARKING SMD TRANSISTOR ST72264G1
Contextual Info: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at