SN74LV Search Results

LVC244

Contextual Info: I SN74LVC241 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SGAS343 - MARCH 1994 DB, DW, OR PW PACKAGE TOP VIEW E P IC (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q lp (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C Typical V q HV (Output V qh Undershoot)

Contextual Info: SN74LVC540 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS JA N U A R Y 1993 • Space-Saving Package Option: Shrink Small-Outline Package DB Features EIAJ 0.65-mm Lead Pitch DB, DW, OR PW PACKAGE (TOP VIEW) • EPIC (Enhanced-Performance implanted CMOS) Submicron Process

Contextual Info: SN74LVC137 3-LINE TO 8-LINE DECODER/DEMULTIPLEXER WITH ADDRESS LATCHES SCAS340 - MARCH 1994 » EPIC Enhanced-Performance Implanted CMOS Submicron Process • Typical V o lp (Output Ground Bounce) D, DB, OR PW PACKAGE (TOP VIEW) A[ B[ c[ Ü2A [ S2B[ G1[

Contextual Info: SN74LVC16543 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS 3CAS317A- NOVEMBER 1993 - REVISED OCTOBER 199S | • Member of the Texas Instruments Wldobua Family • EP/C™ Enhanced-Performance Implanted CMOS Submicron Process • Typical V q l p (Output Ground Bounce)

Contextual Info: SN74LVC841 10-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS M ARCH 1993 OB, DW, OR PW PACKAGE TOP VIEW • Space-Saving Package Option: Shrink Small-Outline Package (DB) Features EIAJ 0.65-mm Lead Pitch • EPIC (Enhanced-Performance Implanted

Contextual Info: I SN74LVC158 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER SCAS342 - MARCH 1994 D, DB, OR PW PACKAGE TOP VIEW EPIC (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C

SN54LV14

Abstract: 2020CN
Contextual Info: SN54LV14, SN74LV14 HEX SCHMITT-TRIGGER INVERTERS _ S C L S 1 8 7 B - FEBRUARY 1 9 9 3 - REVISED APRIL 1996 EPIC Enhanced-Performance Implanted CMOS 2-|i Process SN54LV14 . . . J OR W PACKAGE SN74LV14. . . D, DB, OR PW PACKAGE (TOP VIEW) TVplcal V q l p (Output Ground Bounce)

Contextual Info: SN74LVC74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET JANUARY 1993 D, DB, OR PW PACKAGE TOP VIEW • EPIC (Enhanced-Performance Implanted 1CCR [ 1 1D [ 2 CMOS) Submicron Process • 1CLK [ 3 Designed to Facilitate Incident Wave

Contextual Info: SN54LVU04, SN74LVU04 HEX INVERTERS S C L S 1 B 5 B - FEBRUARY 1993 - REVISED APRIL 1996 EPIC Enhanced-Performance Implanted CMOS 2-n Process Typical V q l p (Output Ground Bounce) < 0.8 V at V c c . Ta = 25°C Typical V q h v (Output V q h Undershoot)

SN74LVC16544

Contextual Info: SN74LVC16544 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS SCAS351 - MARCH 1994 Member of the Texas Instruments Wldebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process DGG OR DL PACKAGE ftOP VIEW) 1ÜÊÂB[ 1 Typical V q l p (Output Ground Bounce)

SN74LVCC4245

Contextual Info: SN74LVCC4245 OCTAL BUS TRANSCEIVER WITH ADJUSTABLE OUTPUT VOLTAGE AND 3-STATE OUTPUTS _ SCAS584A - NOVEMBER 1696 - REVISED JANUARY 1997 EPICrM Enhanced-Performance Implanted CMOS Submicron Process DB, DW, OR PW PACKAGE

Contextual Info: SN74LVC00 QUADRUPLE 2-INPUT POSITIVE-NAND GATE SCAS279B-JANUARY 1993 - REVISED JULY 1995 I • EP/C Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MII-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

SN74LVC16245

Contextual Info: SN74LVC16245 16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS I SCAS314 - NOVEMBER 1993 - REVISED MARCH 1994 DGG OR DL PACKAGE TOP VIEW Member of the Texas Instruments Wldebus Family EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process E 1DIR ,

Contextual Info: SN54LV138, SN74LV138 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS SC LS190P- FEBRUARY 19 9 3 - REVISED JULY 1996 EPIC Enhanced-Performance Implanted CMOS 2-fi Process Typical Vqlp (Output Ground Bounce) < 0.8 V at Vc c , Ta = 25°C SN54LV138. . . J OR W PACKAGE

A910D

Contextual Info: SN74LVC863 9-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS MARCH 1993 • Space-Saving Package Option: Shrink Small-Outline Package DB Features EIAJ 0.65-mm Lead Pitch • EPIC (Enhanced-Performance Implanted CMOS) Submicron Process • Designed to Facilitate Incident Wave

Contextual Info: SN74LVC16952 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS SCAS320 - NOVEMBER 1993 - REVISED MARCH 1994 Member of the Texas Instruments Wldebus Family DOG OR DL PACKAGE TOP VIEW EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process 10EA B L 1

Contextual Info: SN74LVC157 QUADRUPLE 2-LINE TO 1-UNE DATA SELECTOR/MULTIPLEXER SCAS292B-JANUARY 19 9 3 - REVISED JULY 1995 I • EPIC Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model

Contextual Info: SN74LVC827 10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS SCAS306B - MARCH 1993 - REVISED JULY 1996 • EPIC Enhanced-Performance Implanted CMOS Submicron Process db , dw , o r pw packaqe (t o p v ie w ) Typical Vqlp (Output Ground Bounce) < 0.8 V at Vcc = 3-3 V, TA = 25'C

Contextual Info: SN74LVC863 9-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS SCAS31OA - M A RCH 1993 - REVISED JULY 1996 • EPIC Enhanced-Performance Implanted CMOS Submicron Process • Typical V q l p (Output Ground Bounce) < 0.8 V at Vcc = 3.3 V, TA = 25°C | DB, DW, OR PW PACKAQE

Contextual Info: SN74LVC16240 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS SCAS312 - NOVEMBER 1993 - REVISED MARCH 1994 Member of the Texas Instruments Wldebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C

Contextual Info: SN54LVT273, SN74LVT273 3.3-V ABT OCTAL D-TYPE FLIP-FLOPS WITH CLEAR I SCBS130E - MAY 1992 - REVISED JULY 1995 State-of-the-Art Advanced BICMOS Technology ABT Design for 3.3-V Operation and Low-Static Power Dissipation Support Mixed-Mode Signal Operation (5-V

SN74LVC162244

Contextual Info: SN74LVC162244 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS I SCAS546 - OCTOBER 1995 10Ê 1Y1 1Y2 GND 1Y3 1Y4 Output Ports Have Equivalent 26-Q Series Resistors, So No External Resistors Are Required Typical V q l p Output Ground Bounce < 0.8 V at Vc c = 3.3 V, TA = 25°C

Contextual Info: SN74LVCU04 HEX INVERTER SCAS282B - JANUARY 1993 - REVISED JULY 1995 D, DB, OR PW PACKAGE TOP VIEW • EP/C (Enhanced-Performance Implanted CMOS) Submicron Process I • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model

Contextual Info: SN54LV574, SN74LV574 OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCLS1 O flB - MARCH 1993 - REVISED APRIL 1996 • • • • • • EPIC Enhanced-Performance Implanted CMOS 2-n Process Typical Vqlp (Output Ground Bounce) < 0.8 V at Vcc. TA = 25°C