SMD ZD 15 Search Results
SMD ZD 15 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
| BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
| BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
| BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
SMD ZD 15 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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smd zd 15
Abstract: Rogers 4350 8B10B
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smd diode c615
Abstract: sanyo electrolytic capacitors schematic SMPS 12V 20A AN1135 L6911B SO20 6MV1000GX T44-52 smps using SCR smps 5v Power Supply Schematic Diagram
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AN1135 L6911B, L6911B smd diode c615 sanyo electrolytic capacitors schematic SMPS 12V 20A AN1135 SO20 6MV1000GX T44-52 smps using SCR smps 5v Power Supply Schematic Diagram | |
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Contextual Info: l o g i_ 7 c io 8 /io 9 128K x 8 Static RAM Low Power i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum |
OCR Scan |
L7C108/109) 108-L/109-L) MIL-STD-883, CY7C108/109, IDT710 24/71B024, MT5C1008, 226A/62L26A, CXK581020 32-pin | |
ic 8255A
Abstract: SMDID 8255A programmable peripheral interface 8255A-5 J941 5962-8757001
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APX86 ic 8255A SMDID 8255A programmable peripheral interface 8255A-5 J941 5962-8757001 | |
2SA1945
Abstract: marking z*d
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2SA1945 150MHz 600mA -100mA -200mA -10mA 2SA1945 marking z*d | |
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Contextual Info: IC SMD Type Product specification 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating |
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2SA1945 150MHz 600mA -100mA -200mA -10mA | |
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Contextual Info: L7C108/109 128K x 8 Static RAM Low Power ;• v .• s [. : j ;i’[ : <a DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum |
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L7C108/109 L7C108 L7C109 L7C109KC25* L7C109KC20* L7C109KC17* | |
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Contextual Info: ERmet ZD Application Note Version 1.1 Technical Features The ERmet ZD is specifically designed for high speed differential signaling in telecom applications at data rates of up to 5 Gbit/s. This robust, high performance, modular connector system is also designed to be used in conjunction with the 2mm |
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Contextual Info: L7C197 25 6K x 1 Static R A M FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 165 mW typical at 35 ns Standby: 5 mW typical |
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L7C197 MIL-STD-883, IDT71257, CY7C197 24-pin 28-pin L7C197 L7C197CM20 | |
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Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date: 7/15/2003 REV. NO: 1 |
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TZ0235A FR-71S03-01 30sec. | |
siemens 4261-2
Abstract: a4s smd transistor smd transistor A4S smd transistor zd MARKING SMD PNP TRANSISTOR FR TRANSISTOR smd FQ siemens 4261 smd transistor marking 327 siemens automotive air temperature sensors TLE 4271 G
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P-T0220-7-1 Q67000-A9110 Q67000-A9140 Q67006-A9193 P-DSO-20-6 P-T0220-7-8 S35bOS 23SbDS siemens 4261-2 a4s smd transistor smd transistor A4S smd transistor zd MARKING SMD PNP TRANSISTOR FR TRANSISTOR smd FQ siemens 4261 smd transistor marking 327 siemens automotive air temperature sensors TLE 4271 G | |
74xx244
Abstract: 16v8d GAL16LV8 GAL16LV8ZD GAL16VP8 GAL20LV8 GAL20LV8ZD GAL20VP8
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GAL6001/6002) GAL16VP8 GAL20VP8) GAL16V8Z/ZD GAL20V8Z/ZD) ispGAL22V10) GAL20V8 GAL20VP8 GAL20XV10 GAL22V10 74xx244 16v8d GAL16LV8 GAL16LV8ZD GAL20LV8 GAL20LV8ZD GAL20VP8 | |
OE33
Abstract: XTAL 4P 20MHz LVDS fin 1002 PI6LC48 FL2500 FL2500047 GC2500 XTAL 4P 100MHz TQFN-40 TR 1061
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PI6LC4872 PI6LC4872-02) PI6LC4872 PI6LC4872-01) 25MHz, 12KHz 20MHz 25MHz 40-Pin OE33 XTAL 4P 20MHz LVDS fin 1002 PI6LC48 FL2500 FL2500047 GC2500 XTAL 4P 100MHz TQFN-40 TR 1061 | |
22V10 PAL CMOS device
Abstract: Pal programming 22v10 29MA16 Vantis GAL16V8 16v8d 22v10 pal 20LV8D 16v8 PLD 74xx244 20V8
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GAL16VP8 GAL20VP8) GAL16V8Z/ZD GAL20V8Z/ZD) ispGAL22V10) GAL22V10, PALCE22V10Q PALCE22V10Z ispGAL22V10 PALCE24V10 22V10 PAL CMOS device Pal programming 22v10 29MA16 Vantis GAL16V8 16v8d 22v10 pal 20LV8D 16v8 PLD 74xx244 20V8 | |
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Contextual Info: L 7 C 1 9 4 /1 9 5 64K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns |
OCR Scan |
L7C194 MIL-STD-883, CY7C194/195 24/28-pin 28-pin L7C194 L7C195 00Q22b2 | |
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Contextual Info: DB 151 G S THRU DB 157 G S SINGLE PHASE GLASS PASSIVATED SMD BRIDGE RECTIFIERS DBS FEATURES: • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • Small size, simple Installation |
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MIL-STD-202, E181321 | |
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Contextual Info: L7C199 32K x 8 Static RAM FEATURES □ 32K x 8 Static RAM w ith Chip Select Pow erdow n, O utput Enable □ □ □ □ A uto-Pow erdow n Design A dvanced CMOS Technology H igh Speed — to 15 ns m axim um Low Pow er O peration Active: 350 mW typical at 35 ns |
OCR Scan |
L7C199 MIL-STD-883, IDT71256, CY7C198/199 28-pin 32-pin | |
GAL16LV8
Abstract: GAL16LV8ZD GAL20LV8 GAL20LV8ZD
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GAL20V8Z/ZD) ispGAL22V10) MIL-STD-883) GAL16LV8 GAL16LV8ZD GAL20LV8 GAL20LV8ZD | |
ATIC 107
Abstract: Z352 z67 smd Z402 z92am Z1007 z405
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100ppm/ ATIC 107 Z352 z67 smd Z402 z92am Z1007 z405 | |
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Contextual Info: L 7 C 1 9 4 /1 9 5 64K x 4 Static RAM FEATURES DESCRIPTION □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ A dvanced CMOS Technology □ H igh Speed — to 15 ns maxim um □ Low Pow er Operation Active: 210 mW typical at 35 ns Standby: 5 mW typical |
OCR Scan |
L7C194 MIL-STD-883, CY7C194/195 24/28-pin 28-pin L7C194/195 L7C194 L7C195 | |
SMD code ZB
Abstract: zg smd intensity smd zh Zr 1100 ZX 650 smd ZR 55 7
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Contextual Info: TVS SMD Type Surface Mount Transient Voltage Suppressor ESD5Z2.5 SOD-523 Unit: mm +0.05 0.3-0.05 • Features +0.1 1.2-0.1 ● Peak Power up to 200 Watts @ 8 x 20 s Pulse +0.05 0.8-0.05 ● Low Leakage ● Response Time is Typically< 1 ns + +0.1 0.6-0.1 |
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OD-523 77max 07max IEC61000-4-2 IEC61000-4-4 | |
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Contextual Info: SMD Type Product specification ESD5Z2.5 SOD-523 Unit: mm +0.05 0.3-0.05 • Features +0.1 1.2-0.1 ● Peak Power up to 200 Watts @ 8 x 20 s Pulse +0.05 0.8-0.05 ● Low Leakage ● Response Time is Typically< 1 ns + +0.1 0.6-0.1 - ● ESD Rating of Class 3 > 16 kV per Human Body Model |
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OD-523 77max 07max IEC61000-4-2 IEC61000-4-4 | |
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Contextual Info: L 7 C 1 0 8 /1 0 9 128K x 8 Static RAM Low Power DEVICES INCORPORATED FEATURES □ 128K x 8 Static RAM w ith Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation |
OCR Scan |
MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin | |