L7C194 Search Results

Contextual Info: LOGIC DEVICES SbE INC D • S5b5TGS _ 64K x 4 Static RAM m T-46-23-05 n * blo ck The L7C194, L7C195, $nd L7C196 are high-performance, low-power CMOS static RAMs. The storage cells are organized as 65,536 words by 4 bits per word. Data In and Data Out

Contextual Info: L7C194/195 64K x 4 Static RAM DESCRIPTION FEATURES □ 64K x 4 Static RAM w ith C om m on I/O □ A uto-Pow erdow n D esign □ A d van ced CM O S Technology □ H igh Speed — to 15 n s m axim um □ L ow Pow er O peration Active: 210 mW typical at 35 ns

AS1118

Contextual Info: jjjm L7C194/195 ÆmSmmk jjjjjj jm SSm MMMM „„„I mm 64K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

Contextual Info: L7C194/195 *- — • — - - L 7 C 1 3 4 /1 S E 6 4 K x 4 Static RAM JbVUI-S ■ : XJHHO -■AI h □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation

Contextual Info: Typical DC & AC Characteristics 256K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 256K static RAM products listed below: 256K Static RAMs L7C197 — 2 5 6 K x l L7C194 — 64K x4 L7C195 — 64K x4

Contextual Info: L7C194/195/196 6 4 K x 4 Static R A M DESCRIPTION FEATURES □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 265 mW typical at 45 ns Standby: 10 mW typical

Contextual Info: L Q Q IC L7C194/195 6 4 K x 4 Static RA M D E V IO F S IN C O R P O R A T FT FEATURES DESCRIPTION □ 64K x 4 Static RAM w ith Comm on I/O □ Auto-Powerdown Design □ A dvanced CMOS Technology □ High Speed — to 15 ns m aximum □ Low Power Operation

L7C195PC25

Abstract: L7C194PC15 L7C194PC20 L7C194PC25 IDT71258
Contextual Info: L7C194/195 64K x 4 Static RAM L7C194/195 DEVICES INCORPORATED 64K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 64K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum q Low Power Operation

L7C195PC15

Abstract: L7C194PC15 L7C194PC20 L7C194PC25
Contextual Info: L7C194/195 64K x 4 Static RAM L7C194/195 DEVICES INCORPORATED 64K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 64K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum q Low Power Operation

Contextual Info: jjjm MMMM ÆmSmmkjjjjjj jmSSm L 7 C 194/195 64K x 4 Static RAM „ „ „ I mm DEVICES INCORPORATED DESCRIPTION FEATURES □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation

qml-38535

Abstract: SMD MARKING CODE A12 0BK02
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added vendor CAGE number 6Y440 and 65786 to the drawing as approved sources of supply. Removed vendor CAGE number 0BK02 from the drawing. Also deleted ESDS from the drawing. Editorial changes throughout.

Contextual Info: L O G I C L 7 C 1 9 4 / 1 9 5 64K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

L29C* 8 pin SMD

Abstract: 5962-88733 barrel shifter 32-bit 18 x 16 barrel shifter LF2246 LF2247 LF2249 LF2250 LF2272 LF3310
Contextual Info: DEVICES INCORPORATED DSP PRODUCTS PART NO. SPEED ns COM. MIL. PRODUCT DESCRIPTION PACKAGE AVAILABILITY VIDEO IMAGING PRODUCTS LF2242 12/16-bit Half-Band Digital Filter 25 — 44-lead PLCC/PQFP LF2246 LF2247 LF2249 11 x 10-bit Image Filter 11 x 10-bit Image Filter with Coefficient RAM

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

Package 48 LCC

Contextual Info: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170

ic 723 cn

Contextual Info: L 7 C 1 9 4 /1 9 5 64K x 4 Static RAM FEATURES □ 64K x 4 Static RAM w ith C om m on I /O □ A u to -P ow erdow n D esign □ A d v a n ce d CM O S T echnology □ H igh Speed — to 15 ns m ax im u m □ L ow P o w er O p e ratio n Active: 210 m W typical a t 35 ns

Contextual Info: L 7 C 1 9 4 /1 9 5 64K x 4 Static RAM FEATURES DESCRIPTION □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ A dvanced CMOS Technology □ H igh Speed — to 15 ns maxim um □ Low Pow er Operation Active: 210 mW typical at 35 ns Standby: 5 mW typical

Contextual Info: L 7 C 1 9 4 /1 9 5 64K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 64K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in