SMD TRANSISTOR ISS 7 Search Results

smd transistor ISS

Abstract: 2SK3899 2SK38
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2

smd transistor ISS

Abstract: 2SK3900
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2

smd transistor ISS

Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)

XX1000-QT

Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 X1000-QT
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT February 2007 - Rev 08-Feb-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

Frequency Doubler use diode

Abstract: F QFN 3X3 qfn 3x3 16L 28 qfn 3x3 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT April 2006 - Rev 28-Apr-06 Features +17 dBm Output Power -30 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

20 qfn 3x3

Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT January 2008 - Rev 10-Jan-08 Features +18 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

13-Mar-10

Abstract: qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT March 2010 - Rev 13-Mar-10 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

smd transistor ISS

Abstract: 40V 60A MOSFET 2SK3813 SMD MU
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3813 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28

smd transistor ISS

Abstract: 60V 60A TO-252 smd transistor 26 2SK3814
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28

SMD transistor Mu

Abstract: smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE

k 3436 transistor

Abstract: Z9 TRANSISTOR SMD J210-4 SMD Transistor z6 transistor 6 pin SMD Z2 PD54003 smd z5 transistor transistor SMD Z2 480M PD54003S
Contextual Info: PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

Contextual Info: R1115Z SERIES LOW NOISE 150mA LDO Regulator NO.EA-107-070910 OUTLINE The R1115Z Series are CMOS-based voltage regulator ICs with extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an error amplifier,

SMD Transistor z6

Abstract: Z9 TRANSISTOR SMD transistor 6 pin SMD Z2 smd z5 transistor transistor SMD Z2 480M PD54008 PD54008S XPD54008 XPD54008S
Contextual Info: PD54008 - PD54008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

smd transistor mark code 332

Abstract: transistor 9003 smd RP102N RP102N121D PE-WLCSP-4-P2-0610 RP102K
Contextual Info: RP102x SERIES LOW NOISE 300mA LDO REGULATOR NO.EA-141-071025 OUTLINE The RP102x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference

RP102N121B

Contextual Info: RP102x SERIES LOW NOISE 300mA LDO REGULATOR NO.EA-141-080122 OUTLINE The RP102x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference

07N20

Abstract: P-TO252 SPD07N20 SPU07N20
Contextual Info: SPD 07N20 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated

100S

Abstract: BUZ100S E3045 Q67040-S4001-A2 FS25
Contextual Info: BUZ 100S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 77 A • dv/dt rated • 175˚C operating temperature

016b sot-23-5

Abstract: Marking 023A transistor marking 016b TRANSISTOR SMD MARKING CODE p1 MARKING CODE SMD IC sot 23-6 007B smd smd marking 022b R5323K R5323Z marking code EA SMD Transistor
Contextual Info: R5323x SERIES 150mA 2ch LDO REGULATOR NO.EA-089-0607 OUTLINE The R5323x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage

R5323N046B

Abstract: TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 1v smd code marking wlcsp 9 R5323N047B transistor smd code 404
Contextual Info: R5323x SERIES 150mA Dual LDO REGULATOR NO.EA-089-071105 OUTLINE The R5323x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. Each of these voltage regulator ICs consists of a voltage

RP102N33

Abstract: eiaj-rrm RP102N331B RP102K RP102K211D
Contextual Info: RP102x SERIES LOW NOISE 300mA LDO REGULATOR NO.EA-141-080826 OUTLINE The RP102x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference

d5703

Abstract: SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 PD57030 transistor C 945 capacitor 0.1uf 500v
Contextual Info: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

945 TRANSISTOR

Abstract: PD57045S
Contextual Info: PD57045 - PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

TRANSISTOR SMD MARKING CODE 7B 6 pin

Abstract: SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd BUZ110SL
Contextual Info: BUZ 110SL Infineon t « c h n o I o g <e s SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS R DS on Id 55 V 0.01 a