SMD TRANSISTOR ISS 7 Search Results

smd transistor ISS

Abstract: 2SK3899 2SK38
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2

smd transistor ISS

Abstract: 2SK3900
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2

smd transistor ISS

Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)

03 07 qfn 3x3

Abstract: F QFN 3X3 16 pins qfn 3x3 qfn 3x3 16L XX1000-QT-EV1 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT August 2007 - Rev 16-Aug-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

XX1000-QT

Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 X1000-QT
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT February 2007 - Rev 08-Feb-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT August 2006 - Rev 16-Aug-06 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

Frequency Doubler use diode

Abstract: F QFN 3X3 qfn 3x3 16L 28 qfn 3x3 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT April 2006 - Rev 28-Apr-06 Features +17 dBm Output Power -30 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

20 qfn 3x3

Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT January 2008 - Rev 10-Jan-08 Features +18 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

13-Mar-10

Abstract: qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT March 2010 - Rev 13-Mar-10 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

Mimix Broadband

Abstract: XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3
Contextual Info: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT September 2010 - Rev 07-Sep-10 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active

smd transistor ISS

Abstract: 40V 60A MOSFET 2SK3813 SMD MU
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3813 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28

smd transistor ISS

Abstract: 60V 60A TO-252 smd transistor 26 2SK3814
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28

SMD transistor Mu

Abstract: smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max

Contextual Info: XX1000-QT Active Doubler 7.5-22.5/15.0-45.0 GHz Rev. V1 Features •     Functional Block Diagram +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260°C Reflow Compatible

Contextual Info: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V Drain-Source on-state resistance DS on 0.4 W 7 A · Enhancement mode Continuous drain current · Avalanche rated D · d /d rated Pin 1 Pin 2 Pin 3 Type

Contextual Info: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V · Enhancement mode Drain-Source on-state resistance DS on 0.4 W · Avalanche rated Continuous drain current 7 A D · d /d rated Pin 1 Pin 2 Pin 3 Type

smd transistor marking HA

Abstract: TRANSISTOR SMD MARKING 2 HA SMD transistor code AL TRANSISTOR SMD MARKING CODE al SMD TRANSISTOR MARKING code DD Marking code m8t marking m8t TRANSISTOR SMD MARKING CODE dd SMD TRANSISTOR MARKING Dd
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20W PINNING - SOT323 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL • High-speed switching 1 g gate • No secondary breakdown. 2 s source

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH206 SYMBOL QUICK REFERENCE DATA VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package

BSH205

Abstract: smd transistor JE 45 smd transistor ISS smd transistor JE
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 QUICK REFERENCE DATA SYMBOL VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package

SMD Transistor 30w

Abstract: 945 TRANSISTOR PD57030S PD57030 XPD57030 XPD57030S
Contextual Info: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE

PD57018

Abstract: PD5701 PD57018S XPD57018 XPD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W with 14 dB gain @ 960 MHz / 28V • NEW RF PLASTIC PACKAGE

k 3436 transistor

Abstract: Z9 TRANSISTOR SMD J210-4 SMD Transistor z6 transistor 6 pin SMD Z2 PD54003 smd z5 transistor transistor SMD Z2 480M PD54003S
Contextual Info: PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

02p SMD TRANSISTOR

Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
Contextual Info: BST82 A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r telephone ringer and for application