PD54003S Search Results

PD54003S Datasheets (5)

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STMicroelectronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PD54003S		STMicroelectronics	RF POWER TRANSISTORS The LdmoST Plastic FAMILY	Original	PDF	117.04KB	10
PD54003S		STMicroelectronics	RF Power Transistor	Original	PDF	390.92KB	18
PD54003S-E		STMicroelectronics	RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs	Original	PDF	423.25KB	28
PD54003S-E		STMicroelectronics	RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET POWERSO-10RF	Original	PDF		24
PD54003STR-E		STMicroelectronics	RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs	Original	PDF	423.27KB	28

PD54003S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
702 TRANSISTOR smd Abstract: SU 179 702 Z smd TRANSISTOR electrolitic capacitor Hitano smd transistor w J 3 58 SMD Transistor z6 smd z5 transistor transistor 702 smd power transistor smd z9 AN1294 Contextual Info: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF	Original	pd54003 pd54003s powerso-10rf 702 transistor smd +9su 179 702 z smd transistor electrolitic capacitor hitano smd transistor w j 3 58 smd transistor z6 smd z5 transistor transistor 702 smd power transistor smd z9 an1294	PDF
PD54003 Abstract: PD54003S AN1294 Contextual Info: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead	Original	pd54003 pd54003s powerso-10rf an1294	PDF
706 SMD ST Abstract: AN1294 PD54003 PD54003-E PD54003S PD54003S-E PD54003STR-E PD54003TR-E capacitor electrolitic date codes Contextual Info: PD54003-E PD54003S-E RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 12dB gain @ 500MHz ■ New RF plastic package PowerSO-10RF	Original	pd54003-e pd54003s-e 500mhz powerso-10rf +7pd54003 706 smd st an1294 pd54003s pd54003str-e pd54003tr-e capacitor electrolitic date codes	PDF
k 3436 transistor Abstract: Z9 TRANSISTOR SMD J210-4 SMD Transistor z6 transistor 6 pin SMD Z2 PD54003 smd z5 transistor transistor SMD Z2 480M PD54003S Contextual Info: PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE	Original	pd54003 pd54003s pd5400 powerso-10rf +8k 3436 transistor z9 transistor smd j210-4 smd transistor z6 transistor 6 pin smd z2 smd z5 transistor transistor smd z2 480m	PDF
k 3436 transistor Abstract: PD54003 PD54003S AN1294 0802 SMD resistor Contextual Info: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead	Original	pd54003 pd54003s powerso-10rf k 3436 transistor +2an1294 0802 smd resistor	PDF
AN1294 Abstract: J-STD-020B PD54003-E PD54003S-E PD54003STR-E PD54003TR-E smd code electrolitic capacitor Contextual Info: PD54003-E PD54003S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12dB gain @ 500 MHz ■ New RF plastic package PowerSO-10RF	Original	pd54003-e pd54003s-e powerso-10rf an1294 +4j-std-020b pd54003str-e pd54003tr-e smd code electrolitic capacitor	PDF
Contextual Info: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF	Original	pd55008-e pd55008s-e hz/12 powerso-10rf	PDF
Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package	Original	pd54003-e powerso-10rf	PDF
k 3436 transistor Abstract: J-STD-020B PD54003-E PD54003S-E PD54003STR-E PD54003TR-E RF Transistor s-parameter s22f 6 pin Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package PowerSO-10RF formed lead	Original	pd54003-e powerso-10rf k 3436 transistor j-std-020b +5pd54003s-e pd54003str-e pd54003tr-e rf transistor s-parameter s22f 6 pin	PDF
Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package	Original	pd54003-e powerso-10rf	PDF
PD55008 Abstract: AN1294 J-STD-020B PD54003S-E PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E Contextual Info: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF	Original	pd55008-e pd55008s-e hz/12 powerso-10rf +7pd55008 an1294 j-std-020b pd54003s-e pd55008s pd55008str-e pd55008tr-e	PDF
transistor smd po3 Abstract: AN1294 PD54003-E PD54003S-E PD55003 PD55003-E RF Transistor s-parameter PD55003-E-E 0927 TRANSISTOR Contextual Info: PD55003-E PD55003S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V ■ New RF plastic package	Original	pd55003-e pd55003s-e powerso-10rf pd55003 +8pd550y transistor smd po3 an1294 pd54003-e pd54003s-e rf transistor s-parameter pd55003-e-e 0927 transistor	PDF