SMD TRANSISTOR 6C Search Results

Contextual Info: PBSS9110X 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X.

Contextual Info: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS8110X 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.

SMD TRANSISTOR MARKING 6C

Abstract: smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage IC = 10 mA

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

Q67060-S6038

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

2n0404

Abstract: SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1

3N0607

Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1

2n0404

Abstract: ANPS071E SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 40 RDS on max. SMD version 3.4 m ID 80 A P- TO263 -3-2 Type Package Ordering Code

PN0807

Abstract: smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 75 V 6.8 mΩ 100 A P- TO220 -3-1 • dv/dt rated

ANPS071E

Abstract: PN0605 SPB100N06S2-05 SPP100N06S2-05 infineon smd package
Contextual Info: SPP100N06S2-05 SPB100N06S2-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 55 V 4.7 mΩ 100 A P- TO220 -3-1 • dv/dt rated

PN08L07

Abstract: SMD MARKING "68A" ANPS071E SPB100N08S2L-07 SPP100N08S2L-07
Contextual Info: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 75 V 6.5 mΩ 100 A P- TO220 -3-1 • Avalanche rated

2N03L06

Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
Contextual Info: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m
ID 80

2n03l04

Abstract: Q67042-S4113 2n03 s4112 SPB80N03S2L-04 SPI80N03S2L-04 SPP80N03S2L-04 2N03L 2N03L04,SPP80N03S2L-04
Contextual Info: Preliminary data SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P-TO262-3-1 VDS 30 RDS(on) max. SMD version 3.9 m
ID 80 A P-TO263-3-2

2N0807

Abstract: Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 SPP80N08S2-07
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode
175°C operating temperature
Avalanche rated max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 V 7.1 m
80 A P- TO220 -3-1

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS
Power-Transistor Product Summary Feature 40 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 3.1 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

transistor SMD p12

Abstract: SMD 1K tapped inductor boost converter 15V zener diode small package 2 pins smd NCP1252 CRCW12060000Z0EA P10 Draloric NCP1252B smd transistor 637 EKXJ
Contextual Info: TN1252 NCP1252 Boost and CAT4026 LED Driver Board 2010-October-04 TECHNICAL NOTE Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this design package. No licenses to ON Semiconductor’s or any third party’s Intellectual Property is conveyed by the transfer of this

DIN 58405

Contextual Info: ILD223T Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package FEATURES • Two channel optocoupler • High current transfer ratio at IF = 1.0 mA, 500 % minimum A 1 8C • Isolation test voltage, 4000 VRMS C 2 7E A 3 6C • Electrical specifications similar to standard 6-pin

J22 transistor

Abstract: b6 smd sot23 transistor AES/EBU transceiver c86 sot23 TRANSISTOR c104 transisTOR C124 WM8772 WM8772-EV2M CS8427 smd pnp A4 L
Contextual Info: w WM8772-EV2M WM8772 28-pin SSOP Evaluation Board User Handbook INTRODUCTION The WM8772 is a 24-bit, 192kHz 6-Channel CODEC. This evaluation platform and documentation should be used in conjunction with the latest version of the WM8772 datasheet. The datasheet gives device functionality information as well as timing and

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

65E6280

Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

6r950c6

Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6