WL15
Abstract: WL3 MARKING WL3 MARKING cODE
Contextual Info: SIEM ENS 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB5117800BJ/BSJ-50/-60 HYB3117800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:
|
OCR Scan
|
hyb5117800bj/bsj-50/-60hyb3117800bjhyb5117800hyb3117800+8117800bjp-soj-28-4300milp-soj-28-3400milwl15wl3 markingwl3 marking code
|
PDF
|
Q67100-Q1192
Abstract: WL3 MARKING BST60
Contextual Info: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
|
Original
|
hyb3116165bsj/bsthyb3118165bsj/bst16-bithyb3118165bsj/bst-50+8hyb3118165bsj/bst-60gpj05853hyb3116165bsj/bstp-soj-42q67100-q1192wl3 markingbst60
|
PDF
|
smd code marking wl5
Abstract: Q67100-Q1188 BST60
Contextual Info: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
|
Original
|
hyb3116165bsj/bsthyb3118165bsj/bst16-bithyb3118165bsj/bst-50+8hyb3118165bsj/bst-60gpj05853hyb3116165bsj/bstp-soj-42smd code marking wl5q67100-q1188bst60
|
PDF
|
HYB5117400BJ
Abstract: HYB5117400BT hyb5117400
Contextual Info: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb5117400bjhyb5117400bt5117400bj/bt-50/-60/-70p-soj-26/24+3gpj05628gpx05857hyb5117400
|
PDF
|
HYB5116400BJ
Abstract: HYB5116400BT
Contextual Info: 4M x 4-Bit Dynamic RAM HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb5116400bjhyb5116400bt5116400bj/bt-50/-60/-70p-soj-26/24+2gpj05628gpx05857
|
PDF
|
5117400
Abstract: fast page mode dram controller HYB5117400BJ HYB5117400BT
Contextual Info: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb5117400bjhyb5117400bt5117400bj/bt-50/-60/-70p-soj-26/24+4gpj05628gpx058575117400fast page mode dram controller
|
PDF
|
MT42L256M32D2
Abstract: LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V
|
Original
|
mt42l256m16d1mt42l128m32d1mt42l256m32d2mt42l128m64d2+12mt42l512m32d4mt42l192m64d3mt42l256m64d409005aef84427aablpddr2 sdram micronps 229adq-22micron lpddr2mt42l256m32dmarking wl4smd marking code 4ndual lpddr2
|
PDF
|
SMD MARKING CODE sdp
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V
|
Original
|
mt42l256m16d1mt42l128m32d1mt42l256m32d2mt42l128m64d2+6mt42l512m32d4mt42l192m64d3mt42l256m64d4mt42l384m32d309005aef84427aabsmd marking code sdp
|
PDF
|
bt 330
Abstract: HYB3116405 HYB3117405 HYB3117405BJ 4Mx4 DRAM
Contextual Info: 3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT L -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 -60 -70 tRAC
|
Original
|
hyb3116405bj/bthyb3117405bj/bthyb3117405bj/bt-50hyb3117405bj/bt-60+10hyb3117405bj/bt-70405bj/btp-soj-26/24-1gpj05628gpx05857bt 330hyb3116405hyb3117405hyb3117405bj4mx4 dram
|
PDF
|
LPDDR2 SDRAM micron
Abstract: lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V
|
Original
|
mt42l256m16d1mt42l128m32d1mt42l256m32d2mt42l128m64d2+12mt42l512m32d4mt42l192m64d3mt42l256m64d409005aef84427aablpddr2 sdram micronlpddr2lpddr2 sdrammicron lpddr2micron lpddr2 x3235mr11lpddr2 dq calibration216-ball lpddr
|
PDF
|
|
Contextual Info: Preliminary‡ 4Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die
|
Original
|
mt42l256m16d1mt42l128m32d1mt42l256m32d2mt42l128m64d2+6mt42l512m32d4mt42l192m64d3mt42l256m64d4134-ball168-ball09005aef84427aab
|
PDF
|
|
Contextual Info: 4Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die
|
Original
|
mt42l256m16d1mt42l128m32d1mt42l256m32d2mt42l128m64d2+6mt42l512m32d4mt42l192m64d3mt42l256m64d4134-ball168-ball09005aef84fe5e04
|
PDF
|
MT42L256M32D2
Abstract: MT42L128M32D1 lpddr2 DQ calibration MT42L256M16D1 LPDDR2 SDRAM MT42L128M64D2 MT42L256M64D4 mt42L256m16 LPDDR2 SDRAM micron LPDDR2
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die
|
Original
|
mt42l256m16d1mt42l128m32d1mt42l256m32d2mt42l128m64d2+9mt42l512m32d4mt42l192m64d3mt42l256m64d409005aef84427aablpddr2 dq calibrationlpddr2 sdrammt42l256m16lpddr2 sdram micronlpddr2
|
PDF
|
marking wl3
Contextual Info: 3.3V 256 K x 16-Bit Dynamic RAM HYB 314171BJ-50/-60/-70 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJL-50/-60/-70 • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time • Low Power dissipation
|
Original
|
16-bit314171bj-50/-60/-70314171bjl-50/-60/-70hyb314171bj/bjl-50/-60/-70+316-dramgpj09018marking wl3
|
PDF
|
|
|
Q67100-Q1104
Abstract: Q67100-Q1105 Q67100-Q1106
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb5117805bsjhyb5117805bsj-50/-60/-70p-soj-28-3400mil+581maxgpj05699q67100-q1104q67100-q1105q67100-q1106
|
PDF
|
5118160
Abstract: Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50
Contextual Info: 1M x 16-Bit Dynamic RAM 1k-Refresh HYB5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20
|
Original
|
16-bithyb5118160bsj-50/-60/-705118160bsj-50/-60/-7016-dram+6p-soj-42gpj058535118160q67100-q1073q67100-q1072hyb5118160bsj-50
|
PDF
|
Q67100-Q1147
Abstract: Q67100-Q1148 WL10
Contextual Info: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
|
Original
|
hyb3117800bsj-50/-60/-703117800bsj-50/-60/-70p-soj-28-381max+4gpj05699q67100-q1147q67100-q1148wl10
|
PDF
|
1MX4
Abstract: HYB314400BJ/BJL-50/-60/-70
Contextual Info: 1Mx4-Bit Dynamic RAM HYB314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb314400bj/bjl-50/-60/-70p-soj-26/20gpj056261mx4 |
PDF
|
HYB3117805BSJ
Abstract: Q67100-Q1151 Q67100-Q1152
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB3117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb3117805bsjhyb3117805bsj-50/-60/-70p-soj-28-3400mil+481maxgpj05699q67100-q1151q67100-q1152
|
PDF
|
HYB3117805BSJ
Abstract: Q67100-Q1151 Q67100-Q1152
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB3117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb3117805bsjhyb3117805bsj-50/-60/-70p-soj-28-3400mil+481maxgpj05699q67100-q1151q67100-q1152
|
PDF
|
Q67100-Q1072
Abstract: Q67100-Q1073
Contextual Info: 1M x 16-Bit Dynamic RAM 1k-Refresh HYB5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20
|
Original
|
16-bithyb5118160bsj-50/-60/-705118160bsj-50/-60/-7016-dram+4p-soj-42gpj05853q67100-q1072q67100-q1073
|
PDF
|
hyb514
Abstract: 514400 Q67100-Q973 HYB514400B
Contextual Info: 1Mx4-Bit Dynamic RAM Low Power 1Mx4-Bit Dynamic RAM HYB514400BJ/BJL -50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time
|
Original
|
hyb514400bj/bjlp-soj-26/20gpj05626hyb514+3514400q67100-q973hyb514400b
|
PDF
|
EDO DRAM
Abstract: Q67100-Q1104 Q67100-Q1105 Q67100-Q1106 smd code marking wl5
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
|
Original
|
hyb5117805bsjhyb5117805bsj-50/-60/-70p-soj-28-3400mil+781maxgpj05699edo dramq67100-q1104q67100-q1105q67100-q1106smd code marking wl5
|
PDF
|
Q67100-Q1147
Abstract: Q67100-Q1148 WL10
Contextual Info: 2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address
|
Original
|
hyb3117800bsj-50/-60/-703117800bsj-50/-60/-70p-soj-28-381max+4gpj05699q67100-q1147q67100-q1148wl10
|
PDF
|
