SMD DIODE MARKING DD Search Results

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

Contextual Info: fc.bSB'm DDEMBD? bfifi • APX Philips Semiconductors Product specification N AHER PHILIPS/DISCRETE b7E D Schottky barrier diodes BAS70-07 QUICK REFERENCE DATA FEATURES • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

Contextual Info: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2

110N06L

Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature

IEC61249-2-21

Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
Contextual Info: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature

IEC61249-2-21

Abstract: PG-TO220-3 070N06L
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

070N06L

Abstract: DIODE smd marking Ag PG-TO220-3 070N0
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 7 mΩ 80 A • 175 °C operating temperature

PG-TO220-3

Abstract: PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature

Contextual Info: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2

085N06L

Abstract: IPB085N06L IPB085N06L G PG-TO220-3 smd marking g23
Contextual Info: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature

4N04L04

Abstract: DIODE smd marking Ag IPI80N04S4L-04 IPP80N04S4L-04 PG-TO262-3-1 m9120 IPB80N04S4L-04 4N04 SMD DIODE 681
Contextual Info: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow

Contextual Info: Formosa MS SMD Zener Diode BZD84C SERIES List List. 1 Package outline. 2 Features. 2

ANPS071E

Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

05N03LA

Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID

4N03L04

Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

065N06L

Abstract: IEC61249-2-21 IPB063N06L IPP063N06L PG-TO263-3-2 d80 DIODE
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated

05N03LB

Abstract: 05n03l 05N03 IPD05N03LB JESD22 PG-TO252-3-11 C3420
Contextual Info: Type IPD05N03LB G OptiMOS 2 Power-Transistor IPS05N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.8 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)

065N06L

Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bb53R31 ODEbTflS 346 W A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV70W QUICK REFERENCE DATA

Contextual Info: BAP70AM Silicon PIN diode array Rev. 4 — 7 March 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits     High voltage current controlled RF resistor for RF attenuators