SMD DIODE MARKING DD Search Results

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

Contextual Info: fc.bSB'm DDEMBD? bfifi • APX Philips Semiconductors Product specification N AHER PHILIPS/DISCRETE b7E D Schottky barrier diodes BAS70-07 QUICK REFERENCE DATA FEATURES • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

SMD mosfet MARKING code TJ

Abstract: MOSFET SMD MARKING CODE SMD package code MU POWER MOSFET P1 smd marking code DM520 smd marking QT
Contextual Info: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2

JESD22-A108C

Abstract: 2N7002K
Contextual Info: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2

Contextual Info: BB172 VHF variable capacitance diode Rev. 2 — 3 December 2013 Product data sheet 1. Product profile 1.1 General description The BB172 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 SC-76 very small SMD plastic package.

SOT-323

Abstract: JESD22-A108-C JESD22-A108C Marking Code 72
Contextual Info: Formosa MS SMD MOSFET 2N7002W List List. 1 Package outline. 2 Features. 2

2N7002H

Contextual Info: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2

2N7002H

Abstract: 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking
Contextual Info: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2

4P04L04

Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
Contextual Info: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

SOT-323

Contextual Info: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2

SMD MARKING QG 6 PIN

Abstract: smd diode 2n7002 marking code 2n7002 marking code RK RK sot-323 smd sot 323 diode code 14 2N7002KW
Contextual Info: Formosa MS SMD MOSFET 2N7002KW List List. 1 Package outline. 2 Features. 2

4P04L08

Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
Contextual Info: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

110N06L

Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature

IEC61249-2-21

Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
Contextual Info: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature

IEC61249-2-21

Abstract: PG-TO220-3 070N06L
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

070N06L

Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature

marking D78

Abstract: smd diode marking 78A
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature

marking D53

Contextual Info: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.5 mΩ 80 A • 175 °C operating temperature

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

4P0409

Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
Contextual Info: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

070N06L

Abstract: DIODE smd marking Ag PG-TO220-3 070N0
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 7 mΩ 80 A • 175 °C operating temperature