SMD DIODE MARKING 303 Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

67a smd

Abstract: 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a
Contextual Info: SPP80N08S2L-07 SPB80N08S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 75 V RDS on max. SMD version 6.8 mΩ ID 80 A P-TO263-3-2 •=175°C operating temperature P-TO220-3-1

14N03LA

Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
Contextual Info: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

14N03L

Abstract: 14N03LA 14N03
Contextual Info: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level

13n03la

Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
Contextual Info: IPD13N03LA IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level

14N03L

Abstract: 14N03
Contextual Info: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level

IPB14N03LA

Abstract: 14N03 14N03LA smd code D24 SMD CODE d20
Contextual Info: IPB14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; • Lower output saturation voltage Is < 1 mA • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: SSESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

024 marking bidirectional diode

Abstract: smd diode marking coding
Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,

TVS 0201 Diode

Abstract: PNC0106A 024 marking bidirectional diode
Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage,

024 marking bidirectional diode

Abstract: laptop pcb circuits smd diode marking coding smd diode marking code 0s
Contextual Info: ESD11B5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that

Contextual Info: ESD5484FCT5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD5484 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are

Contextual Info: ESD5484FCT5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD5484 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are

smd diode marking code a 041

Abstract: NUR30Q NUR30QW5T1 5M MARKING CODE SCHOTTKY DIODE smd marking 5 K sot-353
Contextual Info: NUR30Q Quad Schottky Barrier Diodes Array These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

toshiba smd marking

Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
Contextual Info: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency

Contextual Info: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package

NTHD3101FT1G

Abstract: NTHD3101F NTHD3101FT1 TL82
Contextual Info: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package

smd marking DA QT

Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
Contextual Info: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics