SMD DIODE A2 55 Search Results

smd 662 sot23

Abstract: DIODE smd marking A4 smd sot23 A4 smd diode A4 BAV70 358 SOT23 smd 7333 A
Contextual Info: BAV70 SOT23 High Speed Switching Diodes Features: • Silicon planar epitaxial high-speed diodes. • High speed switching diode pair, common cathode. SOT-23 Formed SMD Package Package Outline Details Pin Configuration 1. Anode a1 2. Anode (a2) 3. Cathode (k)

IXGH22N50B

Abstract: IXGH22N50BU1 IXGH22N50BU1S smd diode 819 To-247 Jedec package outline
Contextual Info: Preliminary data TM HiP erF AST HiPerF erFAST with Diode IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S IGBT Combi P ac k Pac ack VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions Maximum Ratings VCES

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

diode lt 247

Abstract: IXGH32N60
Contextual Info: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C

Contextual Info: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous

TLMV3100

Contextual Info: TLMV3100 Vishay Telefunken Bicolor SMD LED Color High efficiency red Green Type TLMV3100 Technology Angle of Half Intensity ±ö GaAsP on GaP GaP on GaP 60° Description These devices have been designed to meet the increasing demand for surface mounting technology.

TLMV3100

Abstract: 83042
Contextual Info: TLMV3100 Vishay Semiconductors Bicolor SMD LED Color High efficiency red Green Type TLMV3100 Technology Angle of Half Intensity ±ö GaAsP on GaP GaP on GaP 60° Description These devices have been designed to meet the increasing demand for surface mounting technology.

Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor FEATURES SYMBOL PSMN010-55D QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Logic level compatible VDSS = 55 V

diode SMD MARKING CODE 2M

Abstract: DIODE smd marking A1 k1 marking 2k
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 BAT754 series Schottky barrier double diodes Product specification Supersedes data of 1999 Aug 05 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series PINNING

smd diode green BAND

Abstract: smd diode sod marking code a2 "MARKING CODE S1" smd diode sod-123 marking code a2 A2 DIODE SMD CODE MARKING marking code a2 SMD diode 1N4148WS
Contextual Info: Formosa MS SMD Switching Diode 1N4148WS-FL List List. 1 Package outline. 2 Features. 2

Modco

Abstract: ZENER DIODE J3 Zener Diode C37 DIODE SMD J9 HDR2x7 ZC41 HDR2X10 HDR2X10 SMD connector MW520 zener c26
Contextual Info: 12 13 5 5 4 3 2 1 R2E 220 4 R2D 220 3 R2C 220 2 R2B 220 1 R2A 220 1 2 14 3 15 4 16 5 +3V SW1E DIG-8 D 12 J2 CON2 EE_SEL SW1D DIG-8 13 SW1C DIG-8 15 16 SW1B DIG-8 14 SW1A DIG-8 D C5 .01uF C6 22pF C7 22pF 2 C1 3.3uF 1 +3V U1 TSSOP-24 CA1A 100pF 1 16 FR 24 GND

Contextual Info: Phase-leg Rectifier Diode VRSM V 1300 1700 VRRM V 1200 1600 TO-247 AD DSP 25 VRRM = 1200/1600 V IFRMS = 2 x 43 A IFAVM = 2 x 28 A TO-247 AD SMD TO-247 SMD TO-247 Type DSP 25-12A DSP 25-16A DSP 25-12AS DSP 25-16AS 1 2 3 1 1 2 Symbol Test Conditions I FRMS I FAVM

DIODE SMD J9

Abstract: Relay RL1, 5V, 100 ohm SMD R1D diode smd diode R2C y2 smd zener ZENER SMD J9 HDR2X10 SMD connector smd cap 1206 diode smd J3 smd zener diode code J1
Contextual Info: 12 13 5 5 4 3 2 1 R2E 220 4 R2D 220 3 R2C 220 2 R2B 220 1 R2A 220 1 2 14 3 15 4 16 5 +3V SW1E DIG-8 D 12 J2 CON2 EE_SEL SW1D DIG-8 13 SW1C DIG-8 15 16 SW1B DIG-8 14 SW1A DIG-8 D C5 .01uF C6 22pF C7 22pF 2 C1 3.3uF 1 +3V U1 TSSOP-24 CA1A 100pF 1 16 FR 24 GND

smd diode schottky code marking 2U

Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Contextual Info: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/

B3 6 pin SMD

Contextual Info: 100 GRID TERMINAL RELAY SENSITIVE DPDT Series MGS • Basic  Suppression  Suppression/Steering Product Description A series of ultra miniature hermetically sealed relays with .100 inch grid spaced terminations. These relays are similar to MS series TO-5 relays

Contextual Info: 100 GRID TERMINAL RELAY SENSITIVE DPDT Series MGS • Basic  Suppression  Suppression/Steering Product Description A series of ultra miniature hermetically sealed relays with .100 inch grid spaced terminations. These relays are similar to MS series TO-5 relays

smd diode l4p

Abstract: smd L4P smd diode marking code L41 smd code marking L4P sot-23 marking LC marking AA DIODE SOD C3 marking code sot 223 MV smd marking code SOT23 smd diode L43 SMD circuits MARKING CODE AA
Contextual Info: 11 SMD Schottky Diodes SMD® Schottky Diodes Description Mechanical Data Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/ undershoot pro­

smd schottky diode A2 SOD-123

Abstract: CAP 10u 10 25V X7R 1206 smd diode A2 smd schottky diode 82 smd resistance R39 smd 805 SMD1808-A1 J31 sod-123 1uF 250V 10 X7R SMD electrolytic suppressor diode smd
Contextual Info: DP83848 AspenPhy Demo II - Cover Revised: Wednesday, August 11, 2005 870012505-100 Revision: A2 Bill Of Materials Page1 Item 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 49

ua80

Abstract: DIODE smd marking AA
Contextual Info: Bridge Diode Surface Mounting Device OUTLINE D1UBA80 Unit : mm Weight : 0.087g typ. Package SOPA-4 800V 1A ① ④ 品名略号 Type No. • SMD • • 3.4mm 管理番号（例） Control No. UA80 0916 ③ Feature ① + ~ ③ ∼ ② 6.2 ② ロット記号（例）

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES  DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.  FEATURES

16n50c3

Abstract: diode 1N4148 SMD electrolytic capacitor, .1uF 50v varistor MOV1 SG6961SZ Electrolytic Capacitor 120uf 450v SG6961 8PINSS DIODE smd marking R12 TRN0193
Contextual Info: Product Specification SG6961 Power Factor Controller FEATURES DESCRIPTION „ „ „ „ „ „ „ „ „ „ „ „ The SG6961 is an 8-pin boundary mode PFC controller IC intended for controlling PFC pre-regulators. The SG6961 provides a controlled on-time to regulate the output DC

IXGH32N50BU1

Abstract: IXGH32N50BU1S
Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

smd diode sod-123 marking code a2

Abstract: smd diode A2 smd diode a3 A2 diode smd smd diode marking A3 A3 MARKING CODE SOD-123 marking code a2 a3 diode smd smd diode marking code a2 A2 DIODE SMD CODE MARKING
Contextual Info: Two Terminals SMD Switching Diodes 1N4148W 1N4448W Two Terminals SMD Switching Diodes Features • • • • Fast Switching Speed High Conductance Electrically Identical to Standard JEDEC RoHS compliant SOD-123 Mechanical Data Case: Terminals: Weight: SOD-123, Plastic Case

32N60AU1

Abstract: D-68623 32N60
Contextual Info: IXGH 32N60AU1 IXGH 32N60AU1S VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack = = = = 600 V 60 A 2.9V 125 ns TO-247 SMD (32N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ