SMD CODE MARKING QO Search Results

TA1294F

Abstract: TD62C950RF TD62C950 TD62C950RFg TB9250N TB9248N PA2028A ta1219n TA8310 TA8690ANG
Contextual Info: TOSHIBA TOSHIBA CORPORATION SEMICONDUCTOR COMPANY PAGE : 1 of 3 REF NO. : KT404-006 DATE : April 7, 2004 Please write customer’s name to submit. Shift to Lead Pb -Free Packages for System LSI Products (2nd Stage) In consideration of the global environmental issues, Toshiba has been making efforts

MARKING SMD IC CODE 2100

Abstract: VD F1 SMD B10T smd marking code bs Capacitor Tantal SMD MARKING SMD IC CODE 10 pin SIEMENS CAPACITOR SIEMENS svp p 181 y 1R31
Contextual Info: • flE35b05 QO'ìDbi4 2 1 3 m SIEM ENS GaAsMMIC CGY181 Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 £2, simple output match

PMBTA64

Abstract: pmbta63 PMBTA13
Contextual Info: • bbsa^ai QO^Sfl^ti 355 H A P X N AMER PHILIPS/DISCRETE PMBTA63 PMBTA64 b?E D y v P-N-P SMALL-SIGNAL DARLINGTON TRANSISTORS P-N-P small-signal darlington transistors in a microminiature SMD envelope SOT-23 . Designed primarily for preamplifier input applications requiring high input impedance.

INCOMING RAW MATERIAL INSPECTION chart

Abstract: INCOMING RAW MATERIAL INSPECTION Sample form for INCOMING Inspection of RAW MATERIAL SMD MARKING CODE l6 MATRA MHS INCOMING RAW MATERIAL INSPECTION method smd CODE L4 INCOMING MATERIAL FLOW PROCESS
Contextual Info: Quality Flows Digital ICs Products This document presents the flows used in manufacturing and screening of TEMIC Digital ICs Microcontrollers, Memories, ASICs and ASSPs . Process Control As shown in the following tables, each device is constructed by manufacturing processes which are under

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

BB145B

Abstract: c4 smd marking code DIODE BP marking 8C marking code 4 SC-79 diode marking 79 diode SMD MARKING CODE ka2
Contextual Info: Philips Semiconductors Product specification Low-voltage variable capacitance diode FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145B is a planar technology variable capacitance diode in a SOD523 SC-79 package. • C4: 2.75 pF; ratio: 2.4

SMD TRANSISTOR MARKING xf

Abstract: TRANSISTOR SMD MARKING CODE QO SMD Transistor Marking Code Nt smd transistor marking ip h 6NI37 chip die hp transistor smd transistor xf HCPL-6650 883B smd transistor marking A11
Contextual Info: T £ 2 ñ HEW LETT* W SEM P A C K A R D Hermeticalfy Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N134* 81028 HCPL-563X HCPL-663X Technical Data HCPL-665X 5962-90855 HCPL-560X *See matrix for available extensions. Features • Dual Marked w ith Device

Contextual Info: VLMW712U2U3XV, VLMW712T3U3US, VLMW712T2T3QN www.vishay.com Vishay Semiconductors Little Star 1 W Power SMD LED White FEATURES • Super high brightness surface mount LED • High flux output; up to 113 lm • 120° viewing angle • Compact package outline L x W x H in mm:

Contextual Info: VLMW712U2U3XV, VLMW712T3U3US, VLMW712T2T3QN www.vishay.com Vishay Semiconductors Little Star 1 W Power SMD LED White FEATURES • Super high brightness surface mount LED • High flux output; up to 113 lm • 120° viewing angle • Compact package outline L x W x H in mm:

Contextual Info: VLMW712U2U3XV, VLMW712T3U3US, VLMW712T2T3QN www.vishay.com Vishay Semiconductors Little Star 1 W Power SMD LED White FEATURES • Super high brightness surface mount LED • High flux output; up to 113 lm • 120° viewing angle • Compact package outline L x W x H in mm:

Contextual Info: N AUER PHILIPS/DISCRETE bb53R31 QDEb^Sb S47 H A P X bRE D Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAS16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse

10n03l

Abstract: 10N03 smd diode 36A IPB10N03L diode 73a IPP10N03L IPB10N03L SMD Q67042-S4040
Contextual Info: IPP10N03L IPB10N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 8.9 m
ID 73 A P-TO263-3-2

06n03la

Abstract: IPB06N03LA Q67042-S4146 IPP06N03LA 06N03L
Contextual Info: Preliminary data OptiMOSâ 2 Power-Transistor IPI06N03LA IPP06N03LA,IPB06N03LA Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

07n03l

Abstract: smd DIODE code marking 20A DIODE 07n03l 07N03 transistor 07N03L IPB07N03L IPP07N03L IPB07N03L SMD smd code diode 20a 246 smd code
Contextual Info: IPP07N03L IPB07N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 5.9 m
ID 80 A P-TO263-3-2

Contextual Info: Preliminary data IPI09N03LA IPP09N03LA,IPB09N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

Contextual Info: Preliminary data OptiMOSâ 2 Power-Transistor IPI05N03LA IPP05N03LA,IPB05N03LA Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

09n03la

Abstract: IPB09N09LA IPP09N03LA 09n03 Q67042-S4152 Q67042-S4153 09n03l
Contextual Info: Preliminary data IPI09N03LA IPP09N03LA,IPB09N09LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

05N03L

Abstract: SMD marking code 55A smd code diode 20a 154W IPB05N03L IPP05N03L
Contextual Info: IPP05N03L IPB05N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 4.9 m
ID 80 A
Superior thermal resistance P-TO263-3-2

15n03l

Abstract: 15N03 IPB15N03L IPP15N03L IPB15N03L SMD OPTIMOS smd code diode 20a
Contextual Info: IPP15N03L IPB15N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) max. SMD version ID V m
12.6 42 P-TO263-3-2

14N03LA

Abstract: 14N03L smd diode 1139 IPB14N03LA 14N03 smd code diode 20a IPI14N03LA
Contextual Info: Rev. 1.1 IPI14N03LA IPP14N03LA,IPB14N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

14n03la

Abstract: smd diode 1139 14N03L 14N03 Diode smd code 30a
Contextual Info: Preliminary data IPI14N03LA IPP14N03LA,IPB14N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

smd transistor 1yc

Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Contextual Info: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice

Contextual Info: • bb53ci31 D025flfl7 342 HAPX N APIER PHILIPS/DISCRETE PMBTA05 PMBTA06 b?E I> J V SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment.

Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> • bbS3^31 002b453 223 « A P X Philips Product specification BBY62 Double variable capacitance diode DESCRIPTION The BBY62 is a double variable capacitance diode in a