SMD A7C Search Results

Contextual Info: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7

smd transistor marking A13C

Abstract: smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc
Contextual Info: MICRON TECHNOLOGY INC 17E J> • blllSMT 0001ÖS2 5 MICRON MT5C6404 883C MILITARY SRAM 16K X 4 SRAM 'T - M W - Z V i o AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89629 • JAN (consult factory for reference number)

Contextual Info: WME128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300

SMD A7c

Contextual Info: WHITE M IC R O E L E C T R O N IC S W S128K8-XCX 128Kx8 SRAM MODULE, SMD 5962 93156 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 A16C 2 A14C 3 A12C 4 A7C 5 E W 32 El Vcc 30 □ NC 29 □ w i 28 El A13 D A8 27 A3 C 9 24 E O E A2 C 10 A 1 C 11 23 A O C 12

smd transistor A6t

Abstract: A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c
Contextual Info: 1?E D MICRON TECHNOLOGY INC b l l l S 1^ MICRON « OOOiaiH b MT5C6401 883C HlhN-XCV'.V ISC MILITARY SRAM 64Kx1 SRAM -OS AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86105 • JAN M38510/292 « RAD-tolerance (consult factory)

Contextual Info: WS256K8-XCX M/HITE / M I C R O E L E C T R O N I C S 256Kx8 SRAM MODULE, SMD 5962-93157 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NC C 1 32 D V cc A16 C 2 31 □ A 15 A14 C 3 30 □ A 1 7 A12C 4 29 H W E A7C 5 2 8 □ A 13 A6 C 6 27 H AS C 7 26 □ A 9 as

Contextual Info: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns

Contextual Info: WS57C128FB MILITARY HIGH SPEED 16Kx 8 CMOS EPROM KEY FEATURES • EPI Processing • Ultra-Fast Access Time — Latch-up Immunity Up to 200 mA — 45 ns • Standard EPROM Pinout • DIP and Surface Mount Packaging Available • Low Power Consumption • DESC SMD No. 5962-87661

Contextual Info: G2 WME128K8-XXX M/HITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300ns PIN C O N FIG U R A T IO N ■ JEDEC Approved Packages 32 DIP 32 CSOJ • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300

27c256l

Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • Ceramic Leadless Chip Carrier CLLCC • High Performance CMOS — 120 ns A ccess Tim e • EPI Processing * Fast Programming — Latch-U p Im m unity to 200 m A * DESC SMD No. 5962-86063 — ESD Protection E xceeds 2000 Volts

Contextual Info: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101

256Kx8bit

Contextual Info: M4HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 A18C 1 • Read Access Times of 150, 200, 250, 300ns ■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300

57C256

Abstract: 57C256f WS57C256F-55DMB wsi 57c256f-55 WS57C256F-55 WS57C256F WS57C256F-35 WS57C256F-45 WS57C256F-70 57c256f-70
Contextual Info: WS57C256F HIGH SPEED 32Kx 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — *ACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption

Contextual Info: 77 WHITE /M IC R O ELEC T R O N IC S WMF512K8-XXX5 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES • Access Times of 70, 9 0 ,1 2 0 ,1 50ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)

27s35a

Abstract: 82hs189 27S35
Contextual Info: ^D jSTRJB^nO N^TAT^W EN ^^ Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 SMD Drawing Number 5962-86706 Generic Part Number 27S35/37 4-213 i l AMD 1. SCOPE 1-1 Scope. This drawing describes device requirements f o r c la s s B m ic ro c irc u its In accordance w ith

Contextual Info: M/HITE M IC R O ELE C TR O N IC S WMF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 PRELIMINARY* FEATURES • Access Times o f 60, 70, 90, 120 and 150nS ■ 5 V o lt P rogram m ing. 5V ± 10% Supply. ■ Packaging ■ Low Pow er CMOS • 3 2 lead. H erm etic Ceramic, 0.400" SOJ Package 101

Contextual Info: T T WHITE M IC R O E LE C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A ieC A 16 C A 15 Ü A 12 C A7 C A6 C A5 Ü A4 C A3 C A2 C 1 2 3 4

Contextual Info: WHITE M I C R O E L E C T R O N I C S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CM OS EEPROM MODULE FEATURES FIG. 1 PIN C O N F IG U R A T IO N T O P V IE W 32 □ V . 31 □ WE 30 □ A17 A18C 1 A16C 2 A15C 3

Contextual Info: ca I/I/HITE / M I C R O E L E C T R O N I C S WMS128K8-XXX 128Kx8 MONOLITHIC SRAM. SMD 5962-96691 pending FEATURES A c c e s s Tim es 17, 20, 25, 35, 45, 55n s M IL -S T D -8 8 3 C om pliant D e vic e s A va ilab le Radiation Tolerant D e vice s A va ilab le

i05 SMD

Abstract: onolithic
Contextual Info: T T WMS128K8-XXX I/I/HITE / M I C R O E L E C T R O N I C S 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending PRELIMINARY * FEATURES • Access Tim es 17, 20, 25, 35, 45, 55nS M IL-S TD -883 C om p liant Devices A va ila b le ■ R adiation T o le ra n t Devices A va ila b le

UA15

Contextual Info: WHITE /M IC R O E L E C T R O N IC S W S512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW ^ 32 31 30 29 28 27 26 25 24 D Vcc ÜA15 J A17 HWË H A13 H A8 H A9 U A11 Access Tim es 20, 25, 35, 45ns • S tandard M ic ro c irc u it D raw ing , 5962-92078

HIR26-21C

Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Contextual Info: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight

256K x 8 SRAM dip

Contextual Info: WS256K8-XCX I/I/HITE /M ICRO ELECTRO N IC S 256Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW NCC 1 W 32 ^ Vcc □ A15 A16C 2 31 A14C 3 A12C 4 30 □ A 1 7 29 □ W E A7C 5 28 A6 C 6 A5 C 7 27 H8 25 A4 □ A13 □ A8 26 □ A9 Standard Microcircuit Drawing, 5962-93157

omron 8567

Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Contextual Info: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830