SMD 2A TRANSISTOR Search Results

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1284 TO-252 Unit: mm Low on-state resistance 0.40 @VGS=4V,ID=2A +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 Built-in G-S Gate Protection Diode +0.15 0.50-0.15 +0.2 9.70-0.2

SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd hFE-150 SMD TRANSISTOR BF marking be smd transistor marking 017 2SC3443 transistor smd bf BF Marking 017V
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC3443 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTC3205 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1

WY smd transistor

Abstract: SMD TRANSISTOR MARKING wy
Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1

Contextual Info: Transistors SMD Type Product specification FZT753 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low saturation voltage +0.1 3.00-0.1 Excellent hFE specified up to 2A +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector

Contextual Info: Transistors SMD Type Product specification FZT690B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Very low equivalent on-resistance; RCE sat 125mÙ at 2A. +0.1 3.00-0.1 Gain of 400 at IC=1 Amp. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3

Contextual Info: Transistors SMD Type Product specification FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1254S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25

Contextual Info: SMD Type Product specification 2SB772 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● PNP transistor High current output up to 3A 2.50±0.1 4.00±0.1 ● Low Saturation Voltage ● Complement to 2SD882 0.80±0.1 0.53±0.1 0.44±0.1 0.40±0.1

smd transistor 2a

Abstract: 5a SMD Transistor
Contextual Info: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1

Contextual Info: Transistors SMD Type Product specification 2SB1324 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,

Contextual Info: Transistors SMD Type Product specification FCX589 Features SOT-89 PNP silicon planar medium. Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 0.44-0.1 +0.1 2.50-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 4.00-0.1

Contextual Info: Transistors IC SMD Type Product specification FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

Contextual Info: Transistors IC SMD Type Product specification FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50

Contextual Info: Transistors SMD Type Product specification FZT788B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low equivalent on-resistance; RCE sat 93mÙ at 3A. +0.1 3.00-0.1 Gain of 300 at IC=2 Amps and Very low saturation voltage. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2

Contextual Info: Transistors SMD Type Product specification FZT789A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low equivalent on-resistance; RCE sat 93mÙ at 3A. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Gain of 300 at IC=2 Amps and Very low saturation voltage.

Contextual Info: Transistors IC SMD Type Product specification FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE sat 78mÙ at 4.5A.

Contextual Info: Transistors IC SMD Type Product specification FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 53mÙ at 3A.

Contextual Info: Transistors IC SMD Type Product specification FCX1151A Features 2W power dissipation. 5A peak pulse current. Excellent HFE characteristics up to 5 Amps. Extremely low saturation voltage E.g. 60mv Typ. Extremely low equivalent on-resistance. RCE sat 66mÙ at 3A.

Contextual Info: Transistors SMD Type Product specification FZT1053A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 VCEO = 75V. 4.5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 10 Amp pulse current. 4 Low saturation voltage.

Contextual Info: Transistors IC ransistor SMD Type Product specification FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 0.55 IC up to 10A peak pulse current. 2 Excellent hfe characteristics up to 10A pulsed .

FZT1053A

Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1053A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 VCEO = 75V. 4.5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3

smd marking KD

Abstract: kd smd transistor smd transistor 2A 2SC4541 kd transistor smd br smd transistor smd transistor MARKING 2A smd transistor marking br 2SA1736 smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SC4541 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 1.5A) High Speed Switching Time: tstg = 0.5ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1736

Contextual Info: Transistors IC SMD Type Product specification 2SD1998 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity,