SMC MARKING SJ Search Results

marking cj4

Abstract: s6 smc schottky marking code s4 SMc S4 SMB MARKING CODE S1M SMA SJ SMB marking SS24 SMC MARKING SJ marking ED smb SS16 SMB
Contextual Info: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 40A, 50A OR 100A • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS

VISHAY MARKING CODE

Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Contextual Info: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band

s104 diode 87a

Abstract: s104 85a MELF DIODE color band brown bridge diode kbu 402 s104 diode sma ae SMC MARKING white marking 5 melf -diode glass diode AE 89A diode code ae 89A MARK sma diode general semiconductor
Contextual Info: New Product ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high frequency

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

Contextual Info: S M B Y W 0 4 -2 0 0 B YW 4200B _ HIGH EFFICIEN CY FAST RECO VERY DIODE MAIN PRODUCT CHARACTERISTICS I f a v 4A V rrm 200 V V f (max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS • ■ ■ ■ ■ SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

vishay sj 96

Abstract: JESD22-B102 J-STD-002 S3JHE3
Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

marking s3g

Abstract: SMC MARKING SJ marking code S3j S3M vishay JESD22-B102D J-STD-002B dc s3m sj smc s3j marking VISHAY MARKING sm
Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 µA VF 1.15 V Tj max. 150 °C DO-214AB (SMC) Features Mechanical Data • • • • •

B3100

Abstract: B370 B380 B390
Contextual Info: B370 - B3100 VISHAY 3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER y LITEM ZI POWER SEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 100A Peak

Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 µA VF 1.15 V Tj max. 150 °C DO-214AB (SMC) Features Mechanical Data • • • • •

VISHAY MARKING SG

Abstract: marking code S3j JESD22-B102D J-STD-002B Vishay semiconductor SM
Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

marking code S3j

Abstract: JESD22-B102D J-STD-002B S3J marking code
Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: S3A-M3, S3B-M3, S3D-M3, S3G-M3, S3J-M3, S3K-M3, S3M-M3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop

Contextual Info: S3A, S3B, S3D, S3G, S3J, S3K, S3M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current

Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

vishay S3G

Abstract: VISHAY MARKING SG JESD22-B102 J-STD-002 SMC MARKING SJ s3m vishay VISHAY MARKING SJ SMC s3j vishay
Contextual Info: S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

J-STD-002

Abstract: Vishay semiconductor SM VISHAY MARKING S3M
Contextual Info: New Product S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: S3A thru S3M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: S3A thru S3M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

VISHAY MARKING S3M

Contextual Info: New Product S3A thru S3M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: BL GALAXY ELECTRICAL S3A - S3M 111REVERSE VOLTAGE: 50 - 1000 V CURRENT: 3.0 A SURFACE MOUNT RECTIFIER FEATURES DO - 214AB SMC Plastic package has underwriters laboratory 111 flammability classification 94V-0 For surface mounted applications Low profile package

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered