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    GENERAL SEMICONDUCTOR MARKING SJ Search Results

    GENERAL SEMICONDUCTOR MARKING SJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING SJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VISHAY MARKING CODE

    Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
    Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600ï P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 VISHAY MARKING CODE Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number


    Original     		PDF DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: FCPF190N60_F152 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCPF190N60

    Untitled

    Abstract: No abstract text available
    Text: FCD380N60E N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Description Features ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCD380N60E

    Untitled

    Abstract: No abstract text available
    Text: FCA47N60 / FCA47N60_F109 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology


    Original     		PDF FCA47N60

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60N 11PLANARâ

    Untitled

    Abstract: No abstract text available
    Text: FCPF380N60_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCPF380N60

    Untitled

    Abstract: No abstract text available
    Text: FCPF380N60E_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCPF380N60E

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60F N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 m Features Description • 650 V @TJ = 150 C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology


    Original     		PDF FCH47N60F

    fcu900n60z

    Abstract: No abstract text available
    Text: FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ Features • 675 V @TJ = Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCU900N60Z FCU900N60Z 150oC

    Untitled

    Abstract: No abstract text available
    Text: FCH072N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCH072N60F

    Untitled

    Abstract: No abstract text available
    Text: FCH104N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCH104N60F

    FCA76N60N

    Abstract: SJ 76 A DIODE
    Text: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology


    Original     		PDF FCA76N60N FCA76N60N SJ 76 A DIODE

    Untitled

    Abstract: No abstract text available
    Text: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCA16N60N FCA16N60N

    FCD4N60

    Abstract: No abstract text available
    Text: FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Ω Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching


    Original     		PDF FCD4N60 FCD4N60

    Untitled

    Abstract: No abstract text available
    Text: FCI25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		PDF FCI25N60N

    FCPF400N60

    Abstract: fairchild FCPF400N60
    Text: FCPF400N60 N-Channel SuperFET II MOSFET 600 V, 10 A, 400 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior


    Original     		PDF FCPF400N60 FCPF400N60 fairchild FCPF400N60

    SERDES

    Abstract: fch47n60n 511 MOSFET
    Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60N FCH47N60N SERDES 511 MOSFET

    fcp25n60

    Abstract: FCP25N60N
    Text: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		PDF FCP25N60N fcp25n60

    FCH22N60N

    Abstract: No abstract text available
    Text: FCH22N60N N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description • RDS on = 140 mΩ (Typ.)@ VGS = 10 V, ID = 11 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH22N60N FCH22N60N 150oC

    fch47n60nf

    Abstract: No abstract text available
    Text: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from


    Original     		PDF FCH47N60NF FCH47N60NF

    General Semiconductor SJ diode

    Abstract: FCH47N60F-F133 fch47n60f
    Text: FCH47N60F_F133 N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 mΩ Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology


    Original     		PDF FCH47N60F General Semiconductor SJ diode FCH47N60F-F133