SKR26 Search Results

Contextual Info: GKR26/04 thru GKR26/16 Silicon Standard Recovery Diode VRRM = 400 V - 1600 V IF =25 A Features • High Surge Capability • Types up to 1600 V VRRM DO-4 Package • Equivalent to SKR26 Series 2 2 1 1 GKR Maximum ratings, at Tj = 25 °C, unless otherwise specified GKN has leads reversed

Contextual Info: GKR26/04 thru GKR26/16 Silicon Standard Recovery Diode VRRM = 400 V - 1600 V IF =25 A Features • High Surge Capability • Types up to 1600 V VRRM DO-4 Package • Equivalent to SKR26 Series 2 • Not ESD Sensitive 2 1 1 GKR Maximum ratings, at Tj = 25 °C, unless otherwise specified GKN has leads reversed

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: SEUIKRON INC GbE D | Ô13bb71 OGD1EDÛ Ô | T - Rectifier Diodes Types Gleichrichterdioden V rsm If r m s 57 1S V 1N4002 1N4004 1N4006 1N4007 1002 400 800 1000 S N 113 1600 SKE SKN /16 6/01 /04 /OS /10 100 400 800 1000 /12 SK mA mQ °C 302> 4,5 8,3 ms, 175°C)

Contextual Info: s e MIKRGN Ifr m s V rsm V rrm Ifa v V sin. 180; Tam b 5A SKN 5/02 - 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16 SKN 5/16 Symbol Conditions 45 °C; sin. 180 rec. 120 I fav Tamb = I fsm Tvj = Tvj = i2t T Vj = Tvj =

varo diode

Abstract: 1n1157 1N1158 1N1160 1S1288 1N1159 BYY16 RM10TB MR2001 FC225S
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer 1 Max VRRM 'FSM Max A 00 (A) (V) VF IF @ IR Test (A) 25 °C @ (A) VR IR Test 00 T T2 @ Test (A) (°C) Op«r Package Style Max (°C) General-Purpose, lo >= 10 A . . . .5 . . .10 . . .15

D2BS

Contextual Info: S E M IK R D N V rsm V rrm If a v 200 5A SKN 5/02 - 400 SKN 2,5/04 SKN 5/04 800 SKN 2,5/08 SKN 5/08 1200 SKN 2,5/12 SKN 5/12 1600 SKN 2,5/16 SKN 5/16 SKN 2,5 Symbol Conditions T Vj = 2 5 °C = = = 1 8 0 °C T Vj i2t T vj Tvj Vf V TO rr 2 ,5 120 2 ,4 10 ms

RM10TB-H

Abstract: 1S1288R T20A6 Sanken STR BYX13 varo diode tm59 Diode Westcode BYX25-800 22DC11
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer Max A V VF IR "F RRM IFSM Max (V) (A) (V) @ Test (A) 25 °C @ (A) VR IR Test (V) (A) @ T2 Test (°C) T Op«r Max (°C) Package Style General-Purpose, lo >= 10 A (Cont'd) . . . .5 .

kp50a

Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
Contextual Info: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)