SK351 Search Results

Contextual Info: SK3512 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

b0239c

Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514

Contextual Info: SK3516 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage1.9 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

kt819g

Abstract: SOT9202 SM2174 2N3055-1 044VH10 B0450 2N3055-6 diode GG 71 SOT9903 STS107
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 SOT9903 SOT9903 TIP73B 2N6488 044VH10 B0545B B0545B SK3510 ~~;~:; 25 30 SK3027 SK3029 SK3620 SK3563 BOW41 SM2174 2N3236 B0184 ~+~~g~ 35 40 • 45 50 2N6472 OTL7530 2N5972 BOX23 B0451 BOX23/40636 BOT55

SKC25K85

Abstract: ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (HZ) ICBO t0N r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . -5 -10 -15 -20 . . -25

SK3466

Abstract: SK3559 SK3444 SK3441 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642
Contextual Info: TH OM S O N / D I S T R I B U T O R I B IPO LAR TRANSISTORS 5ÖE D • = 1 0 ^ 0 7 3 Q004flPl 5T5 ■ TCSK com. Maximum Ratings K E Type Device Polarity & Material Breakdown Voltages Application 'complementary device type SK3441 Device Power Dissipata Collector

b0348

Abstract: 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 SML69503 SML69511 SML69603 SML69611 SML3503 SML3507 SML3511 SML3515 ~b~~~~4 25 30 SOT3554 SOT3554 B0638 SOT3551 SOT3551 SOT3551 SOT3577 SOT3577 ~~:g77 35 40 BLX40 BLX40 SOT69503 SOT69503 SOT69603 SOT69603

SMBJ11CA

Abstract: SMBJ22A-13-F sk341 SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA B2100A
Contextual Info: DCS/PCN-1112 PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: March 9. 2009 June 7, 2009 Discrete Semiconductor Encapsulate PCN #: PCN-1112 TITLE Conversion of SMA, SMB and SMC packages to Green Encapsulate molding compound

SK9860

Abstract: SK5036A SK9000 0/B60C 800 Si SK7183
Contextual Info: TH On S O N / DISTRIBUTOR 5flE D • ^031.073 aOÜMêflM 77b ■ TCSK GENERAL PURPOSE RECTIFIERS/DIODES Maximum Ratings Power Devices High Speed Devices ■ H Peak Reverse Current TCE Type SK3017B SK3031A SK3032A SK3033A SK3043B SK3051 SK3051P10 SK3080 SK3081

SK9009

Abstract: SK9005 SK3088 SK3500 SK3602 SK3090 SK7208 SK3925 SK9007 SK9091
Contextual Info: T H OM SO N/ DISTRIBUTOR 2bE D • =102LÔ73 0 0 0 4 1 3 1 2 ■ T'-o t-OI General Purpose Diodes/Rectifiers MAXIMUM RATINGS Material Reverse ' Current Operating Temp. Ir HA °C trr nS Power Devices: Peak Reverse Current TCE Type High Speed Devices: Maximum

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

SK3239

Abstract: sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052
Contextual Info: THOMSON/ DISTRIBUTOR 2bE D • T □ E h Ö 73 O G G H O S T I ■ Bipolar Transistors / y jy j MAXIMUM RATINGS TCE Type 2SD822 Breakdown Voltages Device Device Collector Material & Power Current Base Collector- Collector- Emitter- Polarity Dissipate. Continuous

AH 106 05 Thomson

Abstract: sk3716 SK3717 SK3563 BLM21PG600SN1D SK3444-123A SK3360/280MP SK3441 SK3444/123A SK3528/397
Contextual Info: THOMSON/ DISTRIBUTOR DTE D | ^0 2 ^ 0 7 3 3ipolar Transistors cont’d _ ._ LIMIT CONDITIONS □□□33t.S □ | ''T -V S-O S CHARACTERISTICS BREAKDOWN VOLTAGE RCA Type Polarity and Material Device Dissi­ pation Collector Current Contin­

sk3081 diode

Abstract: SK3090 SK5060 SK7357 SK5036A R017 SK3639 SK7208 sk9779 SK3925
Contextual Info: TH On S O N / DISTRIBUTOR 5flE D • ^031.073 aOÜMêflM 77b ■ TCSK G EN ER A L PU RPOSE R EC TIFIERS/D IOD ES Maximum Ratings Power Devices High Speed Devices ■H Peak Reverse Current TCE Type SK3017B SK3031A SK3032A SK3033A SK3043B SK3051 SK3051P10 SK3080

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any