SJ 2025 Search Results

Contextual Info: FCH043N60 N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FCH041N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 76 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

FCH041N65F

Contextual Info: FCH041N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

VLN 2003a

Abstract: bt 2025 2SK595
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b D D C H 230 T“29“25. 2025 .Vafc-.l'^ ,1 T N-Chanrrel Junction Silicon FET Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

bt 2025

Abstract: 2SK334 Sanyo
Contextual Info: SAN YO S E M I C O N D U C T O R CORP 3SE » 7*H707fc. 0 0 C H 2 B 1 Ì ''-i - r '- ' . T -2 9 -2 5 N-Channel Junction Silicon FET 2025 Capacitor Microphone Applications • 933C FEATURE • Because it has an ultra-compact outline, sets can be made compact.

Brown Boveri induction Motor

Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Contextual Info: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

Contextual Info: DASH NO. M CODE MADE FROM NOTES: 1. FOR USE WITH BELDEN 9209 & 8279 CABLES. 2. FOR CABLING INSTRUCTIONS SEE 3-117. 3. FOR CABLE TRIMMING USE KTJ-134 KTD-224. 4. FOR CRIMPING USE DIE KTH-2002. 5. INTERFACE PER KINGS ES-17. FIG. 6. 6. CENTER CONTACT TO BE SUPPLIED UNASSEMBLED.

TMI 1480

Abstract: pin configuration LCD 3.5-DIGIT 40 pin configuration LCD 3.5-DIGIT ic sj 2025
Contextual Info: O K I Semiconductor MSM5052-01 Thermometer with Clock Function GENERAL DESCRIPTION The MSM5052-01 is an IC equipped with a digital thermometer possessing a temperature alarm, and a clock function. This device uses a thermistor as its sensing element, is able to sense temperatures in the range

sj 2025

Abstract: ic sj 2025 IC 2025 TMI 1480 digital thermometer secs Ishizuka Electronics lcd N7 Thermometer ic preset variable resistor DIGITAL ALARM CLOCK
Contextual Info: O K I Semiconductor MSM5052-01 Thermometer with C lo ck Function G E N E R A L D E S C R IP T IO N The MSM5052-01 is an IC equipped with a digital thermometer possessing a temperature alarm, and a clock function. This device uses a thermistor as its sensing element, is able to sense temperatures in the range

2SA1237

Abstract: 9571 transistor Pc 9571
Contextual Info: SANYO SEMICONDUCTOR CORP 35E D 7^707^ u.,jm OOCHläH 7 fâk • Tr2.9~Z7 P N P Epitaxial Planar Silicon C om p osite Transistor 2029A Differential Amp Applications S57C Applications . Differential amp, current mirror, temperature compensator. Features . Excellent in thermal equilibrium and suited for use in differential amp

2SA608

Abstract: 2SC536 transistor 2sa608 2005A 2SA60 2SA608 D 2SA1782 2SA608KNP 2SA608NP 2SA608SPA
Contextual Info: SANYO S EM I CO ND UC TO R m 1 ;, j 35E CORP D • 7=n707t 0001180 T B T - 2 7 ' / r-: 2oo3A PNP Epitaxial Planar Silicon Transistors General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.

yg 2025

Abstract: 2SA929 2SA930 2003A 4j to92 2SC1570 930 transistor transistor 2sc1570
Contextual Info: SAN YO S E M I C O N D U C T O R CORP 32E D '-'.jpMtjr'q • T T T T O T bo o o f l a a o4 a T - 27- /S PNP Epitaxial Planar Silicon Transistor 2003A Very Low-Noise Amp Applications 37 ID The 2SA929, 930 are transistors for very low noise AF amp. They are especially

1N760

Abstract: 1N760A in995 2N915 7N121 2N656 2N697 2N699 2N703 2N706
Contextual Info: CRIMSON S EM I C O N D U C T O R INC T=| DE | B 5 m O T b 2514096 CRIMSON SEMICONDUCTOR INC 99D Df VICE TYPl P A C K AG E 00292 D 7“ — 3<sr- û ' B VC EO BVC BO BVEBO ICBO @ VCB IV i M IN IVI M IN V I M IN (m A I MAX ltf| HFf @ VC & IC M lN M AX |V t

sj 2025

Abstract: 2SK597 00Gt
Contextual Info: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

sj 2025 for amplifiers

Abstract: sj 2025 GP2W1002YP0F DSAE001141 max70s Ultrasonic Receive Transmit sensors ultrasonic transceiver ic IEC60825-1 ic sj 2025 ir transmitter and receiver sensor
Contextual Info: GP2W1002YP0F GP2W1002YP0F IrDA Compliant Transceiver Module 9.6 kb/s to 1.152 Mb/s MIR Low Profile Low Consumption current •Description ■Agency approvals/Compliance The GP2W1002YP0F is an infrared transceiver module for IrDA ver. 1.4 (MIR). The transceiver consisits of a pin-photo diode, infrared

2SA1240

Contextual Info: SANYO SEMICONDUCTOR CORP 32E D • 7^^70713 0 D □ fl fl-3 0 7 Hi T ' M - J PNP Epitaxial Planar Silicon Transistor 2029A Differential Amp Applications 977C Applications . Differential amp, current mirror. Features . Excellent in t h e r m a l e q u i l i b r i u m

transistor 9751

Abstract: 2SA1239
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? cl li 7G7ki OOCHlû? f p .i T - ^ 9 - ^ 7 PNP Epitaxial Planar Silicon Composite Transistor 20 29 A -.w S D if f e r e n t ia l A m p A p p lic a t io n s 975C Applications . Differential amp, current mirror, temperature compensator.

transistor c2274

Abstract: transistor a984 A984 sc2274 c2274 2SA984 sanyo C2274 E 2SC2274 2SA984 C2274K
Contextual Info: SANYO , ".• v SEMICONDUCTOR <.¡r\ CORP 35E D ■ 7*H707fc, OOtHlfll 1 B9 :rrem . * T'Z ?-;:/ PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 46SF Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13248 Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (19/.0117) AWG TC 0.059 b) Insulation 0.032" Wall, Nom. Polyethylene(PE)

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13250 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 12 (19/.0185) AWG TC 0.093 b) Insulation 0.037" Wall, Nom. Polyethylene(PE)

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13247 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 16 (19/.0117) AWG TC 0.059 b) Insulation 0.032" Wall, Nom. Polyethylene(PE)

2SK333

Abstract: 2028A 2064 fet Sanyo Sanyo TV cm 25
Contextual Info: SANY O S E M I C O N D U C T O R CO RP 32E D 7 cn 7 Q 7 b OGOflflflfl S T '2 7 ^ 7 H|l N -C h an n el Ju nctio n Silicon C om posite FET 2027a Differential Amp Applications - Features • Especially suited for use in first stage of differential amp. • High breakdown voltage and wide dynamic range

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M13249 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 14 (19/.0147) AWG TC 0.070 b) Insulation 0.032" Wall, Nom. Polyethylene(PE)