SIR872DP Search Results
SIR872DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIR872DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 53.7A PPAK SO-8 | Original | 9 |
SIR872DP Price and Stock
Vishay Siliconix SIR872DP-T1-GE3MOSFET N-CH 150V 53.7A PPAK SO-8 |
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SIR872DP-T1-GE3 | Cut Tape | 3,261 | 1 |
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Vishay Intertechnologies SIR872DP-T1-GE3Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR872DP-T1-GE3) |
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SIR872DP-T1-GE3 | Reel | 33 Weeks | 3,000 |
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SIR872DP-T1-GE3 | 10,124 |
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SIR872DP-T1-GE3 | 3,000 |
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SIR872DP-T1-GE3 | 34 Weeks | 3,000 |
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Vishay Intertechnologies SIR872DPT1GE3N-CHANNEL 150 V (D-S) MOSFET Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR872DPT1GE3 | 1,365 |
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SIR872DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiR872DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiR872DP AN609, CON3348 4824m 8258m 1420m 0001m 3616m 5585m 9313m | |
Contextual Info: SiR872DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () Max. ID (A) 0.0180 at VGS = 10 V 53.7 0.0200 at VGS = 7.5 V 51 Qg (Typ.) 31.5 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: |
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SiR872DP SiR872DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiR872DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () Max. ID (A) 0.0180 at VGS = 10 V 53.7 0.0200 at VGS = 7.5 V 51 Qg (Typ.) 31.5 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: |
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SiR872DP SiR872DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit |
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SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |