SILICON N-CHANNEL JUNCTION FET SOT23 Search Results

Bft46

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

CRS15

Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect

CRS15

Abstract: BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

Junction-FET

Abstract: fet smd marking v2 2SK303
Contextual Info: Junction FET SMD Type N-Channel Junction Silicon FET 2SK303 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Ideal for potentiometers, analog switches, low 0.4 3 1 0.55 impedance conversion. +0.1 1.3-0.1 +0.1 2.4-0.1 frequency amplifiers, constant current supplies, and

Junction-FET

Abstract: KSK211
Contextual Info: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER SOT-23 • NF =2.5dB TYP •YFS=9.0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDO IG PD TJ T STG Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature

2SK932

Contextual Info: 2SK932 Ordering number : EN2841A SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

2sk932

Contextual Info: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

Contextual Info: 2SK2394 Ordering number : EN4839B SANYO Semiconductors DATA SHEET 2SK2394 N-Channel Junction Silicon FET Low-Noise HF Amplifier Applications Applications • • AM tuner RF amplifier Low-noise amplifier Features • • • • Large | yfs | Small Ciss

Contextual Info: 2SK932 Ordering number : EN2841B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET 2SK932 High-Frequency Low-Noise Amplifier Applications Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process

Contextual Info: 2SK545 Ordering number : EN1789C SANYO Semiconductors DATA SHEET 2SK545 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance converter applications Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting 2SK545-applied sets to be compact

FET packing marking Mt

Contextual Info: 2SK545 Ordering number : EN1789C SANYO Semiconductors DATA SHEET 2SK545 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance converter applications Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting 2SK545-applied sets to be compact

Contextual Info: KSK211 KSK211 FM Tuner VHF Amplifier • NF =2.5dB TYP • YFS=9.0 mS (TYP) 3 2 1 SOT-23 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings

KSK211

Contextual Info: KSK211 KSK211 FM Tuner VHF Amplifier • NF =2.5dB TYP • YFS=9.0 mS (TYP) 3 2 1 SOT-23 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings

KSK211OMTF

Contextual Info: KSK211 KSK211 FM Tuner VHF Amplifier • NF =2.5dB TYP • YFS=9.0 mS (TYP) 3 2 1 SOT-23 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings

marking code 2Ap

Abstract: Silicon N-Channel Junction FET sot23 transistor 2Ap BF862 fet junction n-channel transistor Philips fet SOT23 code marking Junction-FET fet-bf862 junction fet high frequency n-channel SOT23 FET
Contextual Info: Philips Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in AM car radios PIN • High transfer adm ittance. DESCRIPTION 1 source 2 drain 3 gate APPLICATIONS

bf862

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in

Hard Disk drive spindle motor control inductive sense

Abstract: design ideas hard drive spindle motors diagram Philips stepper motor PHC21025 EIGHT MOSFET ARRAY Silicon P-Channel Junction FET sot23 Dual N FET spindle and VCM motor controller PHN405
Contextual Info: IDEAS FOR DESIGN Page Power/battery switching using VD-MOS FETs 2 Drivers for brushless DC motors 4 Using the PHN708 and PHN405 in hard disk drives 6 Siren driver circuit for car alarms 9 Printed circuit board heatsink area for surface-mount packages 10 Philips Semiconductors

Contextual Info: S IE M E N S Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • /dss = 4 mA, g is = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: NCP345 Over Voltage Protection IC The NCP345 over–voltage protection circuit OVP protects sensitive electronic circuitry from over–voltage transients and power supply faults when used in conjunction with an external P–channel FET. The device is designed to sense an over–voltage condition and

ac adapter delta electronics

Contextual Info: Back NCP345 Over Voltage Protection IC The NCP345 over–voltage protection circuit OVP protects sensitive electronic circuitry from over–voltage transients and power supply faults when used in conjunction with an external P–channel FET. The device is designed to sense an over–voltage condition and

Q62702-F1372

Contextual Info: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

NCP345SNT1

Abstract: mosfet cl sot23-5 MBRM120LT3 NCP345 Silicon P-Channel Junction FET sot23 Li-Ion Battery Charger SOT23-5 V5 SOT23-5 car battery charger circuit diagram
Contextual Info: NCP345 Over Voltage Protection IC The NCP345 over–voltage protection circuit OVP protects sensitive electronic circuitry from over–voltage transients and power supply faults when used in conjunction with an external P–channel FET. The device is designed to sense an over–voltage condition and

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Contextual Info: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code