SILICON 3M Search Results

c 3198 transistor

Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed

MEL78D

Contextual Info: MEL78D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL78D is NPN silicon planar phototransistor with 3mm dimeter light 0.124 rejective filter epoxy package. It features ultra high, illumination sensitivity and fast response time. 5*3 (0.21) » . 1.0(0.04)-!

Contextual Info: CRO MEL78D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL78D transistor rejective features sensitivity «>3 . 15< 0. 12-4> is NPN silicon planar photowith 3mm dimeter light filter epoxy package. It ultra high. illumination and fast response time. 1.0 0.04 >

Contextual Info: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

nj TRANSISTOR

Abstract: 450KW
Contextual Info: 3mm Silicon PNP Photo Transistor Dialight 551-7610 1.57 [.062] 4.32 [.170] 7.11 .280 Features 6.35 [.250] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability 3.00 [.118] DIA. 5.08 [.200]

transistor 0117

Abstract: MDL82
Contextual Info: MDL82 NPN SILICON PHOTO DARLINGTON TRANSISTOR DESCRIPTION « .9 7 • 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination

Contextual Info: CRO MEL708 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon phototransistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.

Contextual Info: 45E D EDAL INDUSTRIES INC m 3mS?lti 0G0054A fi • EDL SILICON HIGH L VOLTAGE CARTRIDGE S E R IE S -g - * l " - 1 1 ' ^ □ Series L high voltage silicon rectifiers are designed for applications requiring minimum size combined with

nj TRANSISTOR

Contextual Info: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability

Contextual Info: DESCRIPTION CRO MEL85 NPN SILICON PHOTO TRANSISTOR MEL85 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flat top type water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time.

MEL82

Abstract: MI38T
Contextual Info: NPN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 M EL82 is NPN silicon p lanar ph o to ­ transistor. It is encapsulated in a 3m m diam eter, low profile and r 4*1 • (0.16) flangeless water clear transparent epoxy package. It features sensitivity,

h004

Abstract: MEL708
Contextual Info: CRO MEL708 iNPN SILICON PHOTO TRANSÌSTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.

MEL708

Contextual Info: CKO / u o NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.

W6NRD0X-0000

Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
Contextual Info: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for

MEL78D

Contextual Info: DESCRIPTION M E L 78D transistor rejective features sensitivity CRO is NPN silicon planar photowith 3mm dim eter light filter epoxy package. It ultra high. illum ination and fast response time. <°-124> n 5.3 • • NPN SILICON PHOTO TRANSISTOR A,ì dimension in mm incb

MEL82

Abstract: MI38T
Contextual Info: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination

Silicon Motion sm501

Contextual Info: Silicon Motion, Inc. SM501 Mobile Multimedia Companion Chip Databook Version 1.02 Silicon Motion , Inc. Company Confidential SM501 MMCC Databook Silicon Motion , Inc. ® SM501 MMCC Databook Chip Versions This document is applicable to revision AA of the SM501 first production part .

Contextual Info: C8051F39x/F37x UDP C8051F390/F370 MCU C A R D U SER ’ S G UIDE 1. Introduction The Unified Development Platform UDP provides a development and demonstration platform for Silicon Laboratories microcontrollers and the Silicon Laboratories software tools, including the Silicon Laboratories

Contextual Info: 3mm Silicon PNP Photo Transistor n Ìn lm U l I m a iig n r • 551-7610 1.57 062] [. Features 6.35 250 ] - -[. • • • • • ± 3.00 [. 118] DIA. T 3.67 149] Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability

CD 8403

Abstract: S268P
Contextual Info: TELEFUNKEN Semiconductors S 268 P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides

MEL708-S

Contextual Info: CRO DESCRIPTION MEL708-S NPN SILICON PHOTO TRANSISTOR -2.9 0.11 MEL708-S is NPN silicon photo­ transistor with external base connection and built in a standard T-l (3mm) water clear package. T .3(0.16) p —0.5(0.019) —3.1(0.12) 1.0(0.039) A 3 .25 /0 .12)

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

PF42

Abstract: SFM309 SFH309P-2 SFM309P
Contextual Info: SFH309P DAYUGHT FILTER SFH309PF SIEMENS SILICON NPN PHOTOTRANSISTOR FE AT U R ES DESCRIPTION • Silicon NPN Phototransistor In Epitaxial Planar Technology The SFH309P/309PF are silicon NPN phototransistors in a standard T1 3 mm plastic package. The SFH309PF has a black daylight filter.