100ITA Search Results

MN6147

Abstract: mn1400 MN6147 c L-13 MN6049
Contextual Info: MICROCOMPUTER and PERIPHERAL L S I’s P eriph eral L S I's E le c t r ic a l C h a r a c te ris tic s Fu nctio n T y p e No. CM O S F req u en cy M N6049 S y n th e s iz e r for TV T a = 2 5 "C PLL M N 6 14 2 Fre q u e n cy S y n th e s iz e r for FM /A M

Contextual Info: INTRODUCTORY S « C lf o n o « l* S £ 0 ON fVilUAtlOH Of liMTEO H U M « * Of OCVKES - 4 8 V to + 5 V O u tp u t S w itc h in g D C -D C C o n v e rte r The MAX650 features user-controllable operating fre­ quency and a separate low voltage detector with adjust­

MGB81DH

Abstract: MOB81DH MOB81DRH MSB81DH MUB81DH MYB81DH
Contextual Info: CRO DESCRIPTION This series lamps are low current high efficiency LED, encapsulated in a 2.37mm x 4.9mm round rectangular bars package with 1 inch lead. MGB81DH is a green LED with green diffused lens. MOB81DH is a orange LED with orange diffused lens. MOB81DRH is a high efficiency red LED with red diffused lens.

Contextual Info: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

2N3798

Abstract: 2N3799
Contextual Info: Datasheet ^ ^ ^^ ^ _ ^^ • tm 2N3798 2N3799 WSem G iconductor I I I i II 1 Corp. PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors

toco

Abstract: KSD227
Contextual Info: SAMSUNG SEMICONDUCTOR INC 1ME KSD227 | T'lfc.MlMa □ OOb'IflO 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to K8M42 • Collector Dissipation Pc-400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit

pt331c

Abstract: PT331 Phototransistors PT202C
Contextual Info: 24 D EVERLIGHT ELE CTRONICS 341S7G3 □□□□□□? 5 PHOTOTRANSISTORS • PHOTOTRANSISTORS MODEL: PT202C /PT331C ■ GENERAL DESCRIPTION T h e P T 2 0 2 C a n d P T 3 3 1 C are S ilicon Nitride P a ssiv a te d N P N planar Phototransistors with exceptionally stable characteristics a n d high illumination sensitivity. T h e c a s e s of