SIDELOOKER DIODE Search Results
SIDELOOKER DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
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Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
SIDELOOKER DIODE Datasheets Context Search
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Contextual Info: QEE273 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 850nm The QEE273 is an 850nm AlGaAs LED encapsulated in a medium wide angle, thin plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = AlGaAs |
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QEE273 850nm QEE273 850nm QSE213 QSE243 | |
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Contextual Info: QEE113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 940nm The QEE113 is a 940nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = GaAs ■ Matched Photosensor: QSE113 |
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QEE113 940nm QEE113 940nm QSE113 | |
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Contextual Info: VTP Process Photodiodes VTP100C PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and |
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VTP100C | |
VTP100CHContextual Info: VTP Process Photodiodes VTP100CH PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and |
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VTP100CH VTP100CH | |
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Contextual Info: QEE122, QEE123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 880 nm The QEE12X is a 880 nm AlGaAs LED encapsulated in a medium wide angle, plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = AlGaAs |
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QEE122, QEE123 QEE12X QSE113 QEE123 | |
QEE213
Abstract: QSE213 QSE243
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QEE213 QEE213 940nm QSE213 QSE243 QSE243 | |
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Contextual Info: VTP Process Photodiodes VTP100CH PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and |
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VTP100CH | |
VTP100HContextual Info: VTP Process Photodiodes VTP100H PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). |
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VTP100H VTP100H | |
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Contextual Info: VTP Process Photodiodes VTP100H PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). |
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VTP100H | |
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Contextual Info: VTP Process Photodiodes VTP7840H PACKAGE DIMENSIONS inch mm CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but |
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VTP7840H | |
VTP7840HContextual Info: VTP Process Photodiodes VTP7840H PACKAGE DIMENSIONS inch mm CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but |
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VTP7840H VTP7840H | |
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Contextual Info: VTP Process Photodiodes VTP7840 PACKAGE DIMENSIONS inch mm CASE 51 LENSED SIDELOOKER CHIP ACTIVE AREA: .0082 in2 (5.27 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transfer molded, large lensed sidelooker package. The dark package material filters out visible light but |
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VTP7840 | |
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Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). |
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VTP100 | |
diode
Abstract: diode 047 diode datasheet Diode 224 diode equivalent sidelooker DIODE
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VTB8440
Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
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VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B | |
VTB100HContextual Info: VTB Process Photodiodes VTB100H PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue |
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VTB100H VTB100H | |
NTE3029BContextual Info: NTE3029B Infrared - Emitting Diode Description: The NTE3029B is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. Features: D Good Optical to Mechanical Alignment D High Irradiance Level Absolute Maximum Ratings: TA = +25°C unless otherwise specified |
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NTE3029B NTE3029B 940nm 100mA | |
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Contextual Info: VTB Process Photodiodes VTB Process Photodiodes VTB100AH PACKAGE DIMENSIONS inch PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue |
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VTB100AH 011in VTB100H | |
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Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEE113 PACKAGE DIMENSIONS DESCRIPTION The QEE113 is a 9 4 0 nm GaAs LED en capsulated in a w ide angle, orange, plastic sidelooker shell package. FEATURES Tight production E8 distribution with m in/m ax limits. |
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QEE113 QEE113 940nm QSE11X ST2128 mW/10° | |
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Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEE113 PACKAGE DIMENSIONS DESCRIPTION The QEE113 is a 940 nm GaAs LED encapsulated in a wide angle, orange, plastic sidelooker shell package. FEATURES Tight production Eedistribution with min/max limits. Steel lead frames for improved reliability in solder |
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QEE113 QEE113 QSE11X ST2128 mA16-7* | |
st1221
Abstract: H23A1
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H23A1/2 H23A1 H23A2 ST1221 st1221 | |
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Contextual Info: E O PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 PACKAGE DIMENSIONS DESCRIPTION I SECTION X-X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting diode and a silicon phototransistor. The clear epoxy packaging |
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H23A1/2 ST1342 ST1220 ST1221 ST1222 4bbfl51 | |
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Contextual Info: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker, |
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VTD206K SFH206K 3030fci01 | |
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Contextual Info: TSL12S, TSL13S, TSL14S LIGHT-TO-VOLTAGE CONVERTERS r r TAOS051B − AUGUST 2005 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D PACKAGE S SIDELOOKER FRONT VIEW Photodiode, Transconductance Amplifier, and Feedback Components |
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TSL12S, TSL13S, TSL14S TAOS051B TSL12S) TSL14S | |