SI8800 Search Results
SI8800 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI8800EDB-T2-E1 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V MICROFOOT | Original | 8 | |||
| SI-8800L | Sanken Electric | Separate Excitation Switching Type with Transformer | Original | 79.89KB | 5 |
SI8800 Price and Stock
Vishay Intertechnologies SI8800EDB-T2-E1N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8800EDB-T2-E1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8800EDB-T2-E1 | Tape & Reel | 6,000 | 8 Weeks | 3,000 |
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SI8800EDB-T2-E1 | Tape & Reel | 3,000 | 10 |
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| SI8800EDB-T2-E1 | Cut Tape | 3,000 | 1 |
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| SI8800EDB-T2-E1 | Tape & Reel | 3,000 |
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Buy Now | |||||||
| SI8800EDB-T2-E1 | Tape & Reel | 3,000 |
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Buy Now | |||||||
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SI8800EDB-T2-E1 | Reel | 3,000 |
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SI8800EDB-T2-E1 | Tape & Reel | 6,000 | 3,000 |
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Buy Now | |||||
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SI8800EDB-T2-E1 | 10 Weeks | 3,000 |
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SI8800EDB-T2-E1 | 15 Weeks | 3,000 |
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Vishay Huntington SI8800EDB-T2-E1Trans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R / MOSFET N-CH 20V MICROFOOT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8800EDB-T2-E1 | 160,000 |
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SI8800 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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si88Contextual Info: Si8800EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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si8800edban60919-may-10si88 | |
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Contextual Info: New Product Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.080 at VGS = 4.5 V 2.8 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21 |
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si8800edb2002/95/ec18-jul-08 | |
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Contextual Info: Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 MICRO FOOT 0.8 x 0.8 S 3 xxx |
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si8800edb2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET |
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si8800edb2011/65/eu2002/95/ec12-mar-12 | |
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Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21 |
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si8800edb2002/95/ec2011/65/eu12-mar-12 | |
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Contextual Info: SPICE Device Model Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si8800edb2011/65/eu2002/95/ec12-mar-12 | |
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Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21 |
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si8800edb2002/95/ec11-mar-11 | |
si8800
Abstract: Si8800E
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si8800edb2011/65/eu2002/95/ec12-mar-12+2 | |
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Contextual Info: SPICE Device Model Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si8800edb2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET |
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si8800edb2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: Guide to Sanken IC Regulators 1. Dropper Type Type VO V Series IO(A) name 3 3.3 5 9 12 15 15.7 24 Variable output voltage Functions (3 to 24) SurfaceA8180SLU 0.15 A8183SLU A8186SLU Thermal protection, Output ON/OFF control A8180SLT 0.15 A8184SLT A8187SLT |
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surfacea8180slua8183slua8186slua8180slt+6 | |
3003nContextual Info: Contents Selection Guide . 2 Product Index by Part Number . 4 Ordering . 6 |
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si-3000nsi-3003nsi-3001nsi-8800l/8900l+5 | |
SI-8400L
Abstract: 3006M
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a8180slu/slta8180slbsi-3000nsi-8400l/8500l+6 | |
Capacitors Nippon Chemi-Con SME type
Abstract: Nippon sxe NIPPON CHEMI-CON 100uF 25V SLA3000M NIPPON CAPACITORS Nippon Chemi-Con SME Nippon Chemi-Con sxe capacitor Nippon capacitors 470uf NIPPON CHEMI-CON capacitors SI-8911L
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qsi-8800l/8900lsi-8800l/8900lsi-8811lsi-8911l+10 | |
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sk 8050s
Abstract: sk a 3120c sk 3240c td 3001N IC SI-8050S 5V 3A SI-3522V SI-3120C 3132V 3522V SI-3132V
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sk 8050ssk a 3120csk 3240ctd 3001n+6 | |
sk a 3120c
Abstract: 3050J SK 3052P sk 8120S sk a 3240c IC SK 8050S A8180 sanken ic regulator str sk 8050S IC SI-8050S 5V 3A
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responsib82-2-714-3700h1-i01ec0-9909040ndsk a 3120c3050j+8 | |
IC SI-8050S 5V 3A
Abstract: sk 3090c sk 8050S sk a 3120c A8180 SI-3242P toroidal transformer 22v td 3001N 3522V 3922v
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ic si-8050s 5v 3ask 3090csk 8050ssk a 3120c+6 | |
IC SI-8050S 5V 3A
Abstract: sk 8050s sk a 3120c STR2012 sk 3240c sk a 3240c sk a 3050c SI-3522V SI-3132V 3522V
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ic si-8050s 5v 3ask 8050ssk a 3120cstr2012+6 | |
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Contextual Info: Switching Type - Application Note •Heat Radiation and Reliability ■Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink, |
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sfpm-62si-8000esi-8200lam01z+6 | |
A8180
Abstract: SLA3000M
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a8180si-3000nsi-3001nsi-3002n+7 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
Nippon Chemi-Con SME
Abstract: Nippon Chemi-Con sxe capacitor Nippon Chemi-Con sxe Nippon sxe Capacitors Nippon Chemi-Con SME type sxe capacitor SME Series NIPPON 100uf 35V sxe Nippon Chemi-Con 470uF 35v Nippon Chemi-Con
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qsi-8800l/8900lsi-8800l/8900lsi-8811lsi-8911l+12 | |
Nippon sxe
Abstract: Capacitors Nippon Chemi-Con SME type NIPPON CAPACITORS Nippon Chemi-Con sxe capacitor Nippon Chemi-Con SME SI-1125HD equivalent chemicon sme
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gsi-8800l/8900lsi-8800l/8900lsi-8811lsi-8911l+10 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm |
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si8489edbsi8902aedbvmn-pt0107-1402 | |