SI8402 Search Results

8402 MOSFET

Abstract: 8402 silicon diode J-STD-020A Si8402DB Si8402DB-T1
Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

smd marking AAAA

Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

Si8401DB-T1

Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +0.30 -0.10 SECTION A-A

Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

Contextual Info: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +- 0.30 0.10 SECTION A-A

8402 MOSFET

Abstract: Si8402DB
Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

34065

Abstract: 4833 AN609 Si8402DB
Contextual Info: Si8402DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si8402DB

Contextual Info: SPICE Device Model Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

Si8401DB-T1

Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX

Si8413DB

Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB

4833

Abstract: AN609 Si8402DB
Contextual Info: Si8402DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si8402DB Vishay Siliconix 20 V N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.037 at VGS = 4.5 V 7.3 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

Si8402DB

Contextual Info: SPICE Device Model Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

8402 MOSFET

Abstract: 8402 8402 silicon diode J-STD-020A Si8402DB Si8402DB-T1
Contextual Info: Si8402DB Vishay Siliconix New Product 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging

Contextual Info: Guide to Sanken IC Regulators 1. Dropper Type Type VO V Series IO(A) name 3 3.3 5 9 12 15 15.7 24 Variable output voltage Functions (3 to 24) SurfaceA8180SLU 0.15 A8183SLU A8186SLU Thermal protection, Output ON/OFF control A8180SLT 0.15 A8184SLT A8187SLT

Si8400

Abstract: SOIC127P600X173-8N AN375 SOIC-16 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1
Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity

24V to 15V REGULATOR IC

Contextual Info: 1-1-2 Switching Mode Regulator IC SI-8400L/8500L Series Separate Excitation Switching Mode Regulator IC with Coil •Features ■Lineup • Switching IC/Coil combined type Part Number SI-8401L SI-8402L SI-8403L SI-8501L SI-8502L SI-8503L SI-8504L VO V 5.0

Contextual Info: 1-1-2 Switching Mode Regulator ICs SI-8400L/8500L Series Separate Excitation Switching Mode Regulator ICs with Coil •Features ■Lineup • Switching ICs/Coil combined type Part Number SI-8401L SI-8402L SI-8403L SI-8501L SI-8502L SI-8503L SI-8504L VO V

8401L

Abstract: SI-8501L SI-8401L SI-8402L SI-8403L SI-8405L SI-8500L SI-8502L SI-8503L SI-8504L
Contextual Info: ●SI-8400L/8500L Series SI-8400L/8500L Series Separate Excitation Switching Type with Coil •Features • Integrated switching IC and coil construction • Requires 2 external components only • Low switching noise • Heatsink not required • Built-in overcurrent and thermal protection circuits

8401L

Abstract: SI-8401L SI-8402L SI-8403L SI-8405L SI-8500L SI-8501L SI-8502L SI-8503L SI-8504L
Contextual Info: ●SI-8400L/8500L Series SI-8400L/8500L Series Separate Excitation Switching Type with Coil •Features • • • • • • Integrated switching IC and coil construction Requires 2 external components only Low switching noise Heatsink not required Built-in overcurrent and thermal protection circuits

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

SI-8500L

Abstract: SI-8403L SI-8406L 8501l SI-8400L SI-8401L SI-8402L SI-8404L SI-8405L si8501l
Contextual Info: SI-8400L/8500L Series Switching Type Separate Excitation Type with Coil Features ● ● ● ● ● ● Integrated switching IC and coil construction Requires only 2 external components Low switching noise Heatsink not required Built-in overcurrent and thermal protection circuits