SI8405 Search Results

Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

Si8401DB-T1

Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +0.30 -0.10 SECTION A-A

20804

Abstract: diode 8405 J-STD-020A Si8405DB
Contextual Info: Si8405DB New Product Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V –4.9 0.070 @ VGS = –2.5 V –4.4 0.090 @ VGS = –1.8 V –4.0 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging

Si8405DB

Contextual Info: SPICE Device Model Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si8405DB Vishay Siliconix 12 V P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V -4 • Material categorization:

diode 8405

Abstract: J-STD-020A Si8405DB Si8405DB-T1 SI8405DB-T1-E1
Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −4.9 0.070 @ VGS = −2.5 V −4.4 0.090 @ VGS = −1.8 V −4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging

Contextual Info: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +- 0.30 0.10 SECTION A-A

Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

J-STD-020A

Abstract: Si8405DB
Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V - 4.9 0.070 @ VGS = - 2.5 V - 4.4 0.090 @ VGS = - 1.8 V - 4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging

Si8401DB-T1

Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX

Si8413DB

Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB

Si8407DB

Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
Contextual Info: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3

diode 8405

Abstract: 8405
Contextual Info: Si8405DB New Product Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area rDS(on) (W)

Si8405DB

Abstract: Si8405DB-T1-E1
Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

AN609

Abstract: Si8405DB
Contextual Info: Si8405DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si8405DB

Abstract: 24NC16
Contextual Info: SPICE Device Model Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −4.9 0.070 @ VGS = −2.5 V −4.4 0.090 @ VGS = −1.8 V −4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging

Si8422

Abstract: SI8422BD KobiConn Si8420 si8420bd SI8400AB si8442bb high speed opto isolator digital galvanic isolator SI8442BB-C-IS
Contextual Info: Si84xxISO-EVB UG Si84 XX ISO E VALUATION B OAR D U SER ’ S G UIDE 1. Introduction The Si84xxISO evaluation board allows designers to evaluate Silicon Lab's family of CMOS ultra-low-power isolators. These isolators are CMOS devices employing RF coupler technology to transmit digital information

Contextual Info: Guide to Sanken IC Regulators 1. Dropper Type Type VO V Series IO(A) name 3 3.3 5 9 12 15 15.7 24 Variable output voltage Functions (3 to 24) SurfaceA8180SLU 0.15 A8183SLU A8186SLU Thermal protection, Output ON/OFF control A8180SLT 0.15 A8184SLT A8187SLT

Si8400

Abstract: SOIC127P600X173-8N AN375 SOIC-16 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1
Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity

Contextual Info: Home Products Applications Support Buy or Sample About Us News Keyword Search Investor Relations Log Out My Profile Full Part Number Search Silicon Labs > Products > Isolation and Power > Isolators > Si840x I2C, SMBus, MBus Isolator Evaluation Kit Isolation and Power

asda data sheet

Abstract: asda digital galvanic isolator digital galvanic isolator mbps digital Isolator interface AN375 Si8400 VDE0884 SI8400AB Si8405AB-B-IS
Contextual Info: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Pin Assignments  Independent, bidirectional SDA and SCL isolation channels  Open  drain outputs with 35 mA sink current Supports  2 I C clocks up to 1.7 MHz

vsc7407

Abstract: SI3452 Si3402 Si84xx digital isolator "power sourcing equipment"
Contextual Info: PoE & PoE+ Enabled Enterprise Class Switching PoE+ PSE REFERENCE DESIGNS FOR VITESSE-BASED SWITCHES CORE BENEFITS AND FEATURES • Complete PSE daughtercard reference design for rapid design-in • Highest integration PSE controllers in the industry for simpler, lower-cost BOM

sil f330

Abstract: ultrasonic sensor with 8051 interfacing 8051 with fire sensor rs232 to I2c measurement of voltage using adc C8051F350 Wired / Wireless Smoke Detector 16x16 LED Matrix smoke detector schematic diagrams interfacing 8051 with smoke sensor GSM home automation circuit diagram
Contextual Info: INDUSTRIAL APPLICATIONS SILICON LABS SOLUTIONS GUIDE 2009 S  mart Metering / Intelligent Home Solutions / Motor Control Industrial Automation SM A RT METERING Silicon Labs’ mixed-signal solutions for industrial applications offer a compelling combination of reliability,