SI8419DB Search Results

a96 laser diode

Abstract: a96 laser a96 "laser diode"
Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

4833

Abstract: AN609 Si8419DB
Contextual Info: Si8419DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si8413DB

Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB

Si8419DB

Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

Si8419DB

Abstract: S 50341
Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

Si8419DB

Abstract: 73327
Contextual Info: SPICE Device Model Si8419DB Vishay Siliconix P-Channel 8V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SMD resistors 1806

Abstract: SMD zener diode 202 1N4148WS
Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5

philips resistor

Abstract: mosfet 4800 sot26 sot363 transistor 4800 mosfet philips data pdta LMN200B01 Si3863DV si5499 EMF32 LMN200B02
Contextual Info: New Product Announcement May 16, 2006 Announcing “NEW” MOSFET + Transistor Complex Arrays in SOT-26 LMN200B01 / LMN400B01 and SOT 363 (LMN200B02 / LMN400E01) Packages A 6 B C 5 4 H 1 K M 2 3 J LMN200B01 / LMN400B01 D Min 0.35 1.5 2.7 ⎯ ⎯ 2.9 0.013

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

p channel depletion mosfet

Abstract: depletion MOSFET Si8419DB Richardson
Contextual Info: Presented at Portable Power Developers Conference, April 3 – 6 , 2006, Richardson, Texas. www.darnell.com. Utilizing Low-Threshold Voltages for Increased Battery Life Yalcin Bulut Vishay Intertechnology, Inc. Santa Clara, Calif. Decreasing power consumption and extending the battery life is the goal of every design