SI5920 Search Results

Contextual Info: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21

74134

Contextual Info: SPICE Device Model Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74134

Abstract: AN5732
Contextual Info: SPICE Device Model Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI5920

Contextual Info: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21

S5223

Contextual Info: Si5920DC New Product Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (W) ID (A) 0.032@ VGS = 4.5 V 4a 0.036 @ VGS = 2.5 V 4a 0.045 @ VGS = 1.8 V 4a 0.054 @ VGS = 1.5 V 4a D TrenchFETr Power MOSFET: 1.5–V Rated

AN609

Contextual Info: Si5920DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SA MARKING DIODE

Contextual Info: Si5920DC New Product Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (W) ID (A) 0.032@ VGS = 4.5 V 4a 0.036 @ VGS = 2.5 V 4a 0.045 @ VGS = 1.8 V 4a 0.054 @ VGS = 1.5 V 4a D TrenchFETr Power MOSFET: 1.5–V Rated

Contextual Info: New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ) 7.3 nC • TrenchFET Power MOSFET: 1.5 V Rated

si5920

Contextual Info: New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ) 7.3 nC • TrenchFET Power MOSFET: 1.5 V Rated

Contextual Info: Si5920DC New Product Vishay Siliconix Dual N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (W) ID (A) 0.032@ VGS = 4.5 V 4a 0.036 @ VGS = 2.5 V 4a 0.045 @ VGS = 1.8 V 4a 0.054 @ VGS = 1.5 V 4a D TrenchFETr Power MOSFET: 1.5–V Rated

SiB914

Abstract: Si4230 LTC4365ITS8 LT3850 LTC4356 LTC4365 marking r4b diode LTC4365C 12V 1A MOSFET N-channel LTC4365HDDB
Contextual Info: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES DESCRIPTION n The LTC 4365 protects applications where power supply input voltages may be too high, too low or even negative. It does this by controlling the gate voltages of a pair of external N-channel MOSFETs to ensure that the output

LT3850

Contextual Info: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V Blocks 50Hz and 60Hz AC Power No Input Capacitor or TVS Required for Most

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

SiB914

Abstract: LT3850 TRANZORB 4925 B mosfet Si4230 LTC4365 SI4946 SI9945 tranz LTC4365ITS8
Contextual Info: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V Blocks 50Hz and 60Hz AC Power No Input Capacitor or TVS Required for Most

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

SC-89-6

Abstract: SiB914
Contextual Info: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry