SI49 Search Results

*4947ad

Contextual Info: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

si4916

Contextual Info: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V

Contextual Info: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4922BDY

Abstract: SI4922BDY-T1-E3
Contextual Info: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested

Si4980DY

Contextual Info: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si4948EY

Contextual Info: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

4963 MOSFET

Abstract: Si4963DY SI4963 marking 4963
Contextual Info: Si4963DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

Contextual Info: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

si4914b

Abstract: si4914 Si4914BDY
Contextual Info: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition

Si4926DY

Contextual Info: Si4926DY New Product Vishay Siliconix Asymmetrical Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0125 @ VGS = 10 V 10.5 0.017 @ VGS = 4.5 V 9.0 D1 D2 D2 D2

MAR 732

Abstract: Si4900DY S-50392
Contextual Info: SPICE Device Model Si4900DY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4971DY

Abstract: Si4971DY-T1
Contextual Info: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

Si4906DY-T1-E3

Abstract: si4906 SI4906DY
Contextual Info: Si4906DY Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 40 FEATURES rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS tested 6.6

74319

Abstract: 0947 AN609 Si4908DY 72483
Contextual Info: Si4908DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4973DY

Abstract: Si4973DY-T1
Contextual Info: Si4973DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.023 @ VGS = - 10 V - 7.6 0.029 @ VGS = - 6 V - 6.8 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

Si4940DY

Contextual Info: Si4940DY New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.7 0.059 @ VGS = 4.5 V 4.4 D TrenchFETr Power MOSFET APPLICATIONS D Automotive Airbags D1 D2 SO-8 S1 1 8 D1 G1

74856

Abstract: Si4922BDY
Contextual Info: SPICE Device Model Si4922BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4936BDY

Contextual Info: SPICE Device Model Si4936BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4936DY

Contextual Info: Si4936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 NĆChannel MOSFET S2 NĆChannel MOSFET

Contextual Info: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS

Contextual Info: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET